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AS3BJHM3/52T Equivalent & Substitute Parts
Part Overview
The AS3BJHM3/52T is an avalanche diode rated for 600 V DC reverse voltage and 3 A average rectified current in a surface mount DO-214AA (SMB) package. Manufactured by Vishay General Semiconductor - Diodes Division, this component is discontinued at DiGi Electronics. Equivalent and substitute parts are necessary to maintain design continuity and ensure component availability for new production runs and field replacements.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Current - Average Rectified (Io) | 3 A |
| Voltage - Forward (Vf) (Max) @ If | 1.05 V @ 3 A |
| Reverse Recovery Time (trr) | 1.5 µs |
| Current - Reverse Leakage @ Vr | 20 µA @ 600 V |
| Capacitance @ Vr, F | 40 pF @ 4 V, 1 MHz |
| Package / Case | DO-214AA, SMB |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -55°C ~ 175°C |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Substitute Part Grouping Explanation
Substitution of the AS3BJHM3/52T is determined by the following critical parameters:
Mandatory Matching Parameters:
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 3 A
- Package / Case: DO-214AA, SMB
- Mounting Type: Surface Mount
- RoHS Status: ROHS3 Compliant
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
Allowable Variation Parameters:
- Voltage - Forward (Vf) (Max) @ If: Substitute parts may vary within acceptable circuit design margins
- Reverse Recovery Time (trr): Substitute parts may have different recovery characteristics based on technology (Standard vs. Fast Recovery)
- Current - Reverse Leakage @ Vr: Substitute parts may have lower leakage specifications
- Capacitance @ Vr, F: Substitute parts may have different capacitance values
- Operating Temperature - Junction: Substitute parts may have different maximum junction temperature ratings
Substitute parts are grouped into two categories: direct equivalents (same current rating and technology) and functional substitutes (same voltage and current rating with different recovery characteristics).
Parameter Comparison
| Part Number | Manufacturer | Vr (Max) | Io | Vf (Max) @ If | trr | Ir @ Vr | Technology | Package | Product Status |
|---|---|---|---|---|---|---|---|---|---|
| AS3BJHM3/52T | Vishay General Semiconductor | 600 V | 3 A | 1.05 V @ 3 A | 1.5 µs | 20 µA @ 600 V | Avalanche | DO-214AA, SMB | Discontinued |
| AS3BJHM3_A/H | Vishay General Semiconductor | 600 V | 2 A | 1.05 V @ 3 A | 1.5 µs | 20 µA @ 600 V | Avalanche | DO-214AA, SMB | Active |
| ER3JB-TP | Micro Commercial Co | 600 V | 3 A | 1.7 V @ 3 A | 35 ns | 5 µA @ 600 V | Standard | DO-214AA, SMB | Active |
| S3JB | HY Electronic (Cayman) Limited | 600 V | 3 A | 1.1 V @ 3 A | >500 ns | 5 µA @ 600 V | Standard | DO-214AA, SMB | Active |
| S3JB-13-F | Diodes Incorporated | 600 V | 3 A | 1.15 V @ 3 A | >500 ns | 10 µA @ 600 V | Standard | DO-214AA, SMB | Active |
| S3JB-TP | Micro Commercial Co | 600 V | 3 A | 1.15 V @ 3 A | >500 ns | 10 µA @ 600 V | Standard | DO-214AA, SMB | Active |
| STTH1L06U | STMicroelectronics | 600 V | 1 A | 1.3 V @ 1 A | 80 ns | 1 µA @ 600 V | Standard | DO-214AA, SMB | Active |
| STTH1R06U | STMicroelectronics | 600 V | 1 A | 1.7 V @ 1 A | 45 ns | 1 µA @ 600 V | Standard | DO-214AA, SMB | Active |
| STTH2L06U | STMicroelectronics | 600 V | 2 A | 1.3 V @ 2 A | 85 ns | 2 µA @ 600 V | Standard | DO-214AA, SMB | Active |
| STTH2R06U | STMicroelectronics | 600 V | 2 A | 1.7 V @ 2 A | 50 ns | 2 µA @ 600 V | Standard | DO-214AA, SMB | Active |
| STTH3L06U | STMicroelectronics | 600 V | 3 A | 1.3 V @ 3 A | 85 ns | 3 µA @ 600 V | Standard | DO-214AA, SMB | Active |
Engineering Selection Recommendations
Direct Equivalent (Same Current Rating - 3 A):
The following parts maintain the 600 V / 3 A specification and are suitable for direct substitution in applications where the original avalanche technology is not a design requirement:
-
S3JB (HY Electronic): Active product status with AEC-Q101 automotive qualification. Forward voltage of 1.1 V @ 3 A closely matches the original specification. Standard recovery technology with reverse recovery time >500 ns.
-
S3JB-13-F (Diodes Incorporated): Active product status with ROHS3 compliance. Forward voltage of 1.15 V @ 3 A and standard recovery characteristics. Operating temperature range -65°C ~ 150°C.
-
S3JB-TP (Micro Commercial Co): Active product status with ROHS3 compliance. Forward voltage of 1.15 V @ 3 A and standard recovery characteristics. Equivalent to S3JB-13-F with different packaging option.
-
STTH3L06U (STMicroelectronics): Active product status with fast recovery technology (85 ns trr). Forward voltage of 1.3 V @ 3 A. Lower reverse leakage current (3 µA @ 600 V) compared to original specification.
-
ER3JB-TP (Micro Commercial Co): Active product status with fast recovery technology (35 ns trr). Forward voltage of 1.7 V @ 3 A. Significantly lower reverse leakage current (5 µA @ 600 V). Fast recovery characteristic may require circuit evaluation for switching applications.
Lower Current Rating Alternatives (2 A and 1 A):
The following parts are suitable only for applications where the circuit design permits reduced current capacity:
-
AS3BJHM3_A/H (Vishay General Semiconductor): Active product status with AEC-Q101 automotive qualification. Maintains avalanche technology with 2 A rating. Forward voltage and recovery characteristics identical to original part.
-
STTH2L06U and STTH2R06U (STMicroelectronics): Active products with 2 A rating and fast recovery technology. Suitable for circuits designed for 2 A operation.
-
STTH1L06U and STTH1R06U (STMicroelectronics): Active products with 1 A rating and fast recovery technology. Suitable only for circuits designed for 1 A operation.
Selection Criteria:
- Product Status: All recommended substitutes are active products with established supply chains.
- Compliance: All substitutes maintain ROHS3 compliance and MSL 1 rating.
- Package Compatibility: All substitutes use DO-214AA (SMB) surface mount package.
- Current Capacity: Select parts with current rating equal to or greater than circuit requirements.
- Recovery Characteristics: Standard recovery parts (>500 ns) are preferred for direct replacement. Fast recovery parts (<500 ns) require circuit evaluation for switching performance.
Frequently Asked Questions (FAQ)
Q: Can I use a lower current rated part (2 A or 1 A) as a substitute for the 3 A AS3BJHM3/52T?
A: Lower current rated parts are not suitable substitutes unless the circuit design has been verified to operate at the reduced current level. The 3 A rating is a critical parameter for the original design. Using a 2 A or 1 A part in a 3 A circuit will result in component failure or circuit malfunction.
Q: What is the difference between avalanche and standard recovery diodes?
A: The AS3BJHM3/52T uses avalanche technology with a reverse recovery time of 1.5 µs. Standard recovery diodes have recovery times >500 ns, while fast recovery diodes have recovery times ≤500 ns. The recovery characteristic affects switching speed and electromagnetic interference generation. Avalanche diodes provide specific voltage regulation characteristics in reverse bias conditions.
Q: Are fast recovery substitutes (STTH series) compatible with the original design?
A: Fast recovery diodes have significantly shorter reverse recovery times (35-85 ns) compared to the original 1.5 µs specification. While they maintain the same voltage and current ratings, the faster switching characteristic may affect circuit performance in applications sensitive to switching transients. Circuit evaluation is required before substitution.
Q: Can I substitute the S3JB or S3JB-13-F for the AS3BJHM3/52T?
A: Yes, both S3JB and S3JB-13-F are suitable direct substitutes. They maintain the 600 V / 3 A specification and DO-214AA package. Forward voltage specifications are within acceptable design margins (1.1 V and 1.15 V respectively, compared to 1.05 V original). Both are active products with established supply availability.
Q: What is the significance of AEC-Q101 qualification?
A: AEC-Q101 is an automotive qualification standard. Parts with this certification (AS3BJHM3_A/H and S3JB) have undergone additional reliability testing and are suitable for automotive applications. Non-qualified parts may be used in general industrial applications but are not recommended for automotive use.
Q: Does the operating temperature range affect substitution suitability?
A: The original AS3BJHM3/52T operates from -55°C to 175°C. Most substitutes maintain similar or identical temperature ranges. STTH series parts specify 175°C maximum junction temperature. Verify that the substitute part's temperature range meets the application requirements before selection.
Q: Are all substitute parts ROHS3 compliant?
A: Yes, all substitute parts listed are ROHS3 compliant and have MSL 1 (Unlimited) moisture sensitivity rating, matching the original part specifications.
Q: What is the difference between DO-214AA and SMB package designations?
A: DO-214AA and SMB refer to the same physical package. DO-214AA is the JEDEC designation, while SMB is the industry common name. All parts in this comparison use this identical package and are mechanically and electrically interchangeable from a package perspective.
Q: Can I use STTH3L06U as a direct replacement?
A: STTH3L06U maintains the 600 V / 3 A specification and DO-214AA package. However, it uses fast recovery technology (85 ns trr) compared to the original avalanche technology (1.5 µs trr). The forward voltage is 1.3 V @ 3 A compared to 1.05 V original. Circuit evaluation is required to confirm compatibility with switching performance and voltage regulation requirements.
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