ER3JB-TP >
ER3JB-TP
Micro Commercial Co
DIODE GEN PURP 600V 3A DO214AA
13395 Pcs New Original In Stock
Diode 600 V 3A Surface Mount DO-214AA (SMB)
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ER3JB-TP Micro Commercial Co
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ER3JB-TP

Product Overview

12825583

DiGi Electronics Part Number

ER3JB-TP-DG
ER3JB-TP

Description

DIODE GEN PURP 600V 3A DO214AA

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13395 Pcs New Original In Stock
Diode 600 V 3A Surface Mount DO-214AA (SMB)
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Minimum 1

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In Stock (All prices are in USD)
  • QTY Target Price Total Price
  • 5 0.1615 0.8075
  • 50 0.1467 7.3350
  • 150 0.1385 20.7750
  • 500 0.1335 66.7500
  • 3000 0.1292 387.6000
  • 6000 0.1270 762.0000
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ER3JB-TP Technical Specifications

Category Diodes, Rectifiers, Single Diodes

Packaging Tape & Reel (TR)

Series -

Product Status Active

Technology Standard

Voltage - DC Reverse (Vr) (Max) 600 V

Current - Average Rectified (Io) 3A

Voltage - Forward (Vf) (Max) @ If 1.7 V @ 3 A

Speed Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr) 35 ns

Current - Reverse Leakage @ Vr 5 µA @ 600 V

Capacitance @ Vr, F 45pF @ 4V, 1MHz

Mounting Type Surface Mount

Package / Case DO-214AA, SMB

Supplier Device Package DO-214AA (SMB)

Operating Temperature - Junction -50°C ~ 150°C

Base Product Number ER3J

Datasheet & Documents

HTML Datasheet

ER3JB-TP-DG

Environmental & Export Classification

RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080

Additional Information

Other Names
ER3JB-TPMSDKR
ER3JBTP
ER3JB-TPMSCT
ER3JB-TPMSTR
Standard Package
3,000

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ER3JB-TP High Voltage General Purpose Diode: Technical Overview for Efficient Product Selection

Introduction to the ER3JB-TP Series Diode from Micro Commercial Co

Within the context of modern electronics design, the ER3JB-TP Series Diode engineered by Micro Commercial Co. offers significant advantages for scenarios requiring robust voltage tolerance, moderate forward current management, and efficient surface-mount integration. Analysis of the underlying design principles reveals the diode’s primary construction as a fast-recovery rectifier using silicon junction technology, which imparts a balanced tradeoff between low leakage currents and rapid switching capability. The rated reverse voltage, typically specified at or near 600V, supports safe operation across demanding circuits including switch-mode power supplies (SMPS), flyback converter snubbers, and secondary-side rectification tasks.

Thermal behavior under operational load is a critical checkpoint. The ER3JB-TP’s junction-to-ambient thermal resistance, managed by its compact SMB package, enables streamlined PCB layouts with controlled heat dissipation characteristics. This attribute—combined with peak repetitive forward surge current ratings in the vicinity of 50A—allows for confident deployment in pulse-handling environments. In prototyping and volume production, the diode’s surface-mount package not only accelerates automated placement but also ensures mechanical stability and reproducible solder joint integrity, minimizing field returns due to assembly-related failures.

Engineers frequently value the ER3JB-TP series for its minimal reverse recovery time, enhancing efficiency in high-frequency applications by reducing stored charge effects. This property diminishes secondary conduction losses, which can manifest in everything from compact LED drivers to energy-critical industrial controls. Practical reliability data accumulated from prolonged cycle testing and accelerated life studies confirms sustained performance even under thermal cycling and repetitive electrical stress, reinforcing the component’s suitability for harsh application regimes.

In assessing alternatives, the ER3JB-TP series demonstrates a compelling mix of cost-effectiveness, parameter stability, and supply-chain availability. Its adoption in designs where board space is constrained, and thermal budgets are tight, reflects a nuanced understanding of market and engineering requirements. Strategic consideration of diode selection is increasingly driven by not just electrical ratings, but by mounting compatibility and robustness across variable deployment environments—a space where the ER3JB-TP series consistently excels.

Detailed examination of datasheet values, coupled with practical field feedback, reveals that the series balances theoretical specification and real-world durability. Continuous, reliable switching and minimal susceptibility to anomalies such as voltage overshoot or EMI-related malfunctions allow for streamlined design validation cycles. Ultimately, integration of the ER3JB-TP in high-volume products demonstrates the ongoing importance of matching diode characteristics to application-specific demands, anchoring the quest for predictable, high-quality circuit operation across diverse industry segments.

Detailed Product Description of the ER3JB-TP

The ER3JB-TP operates as a robust general-purpose diode, optimized for integration within high-voltage, high-current architectures. Its precise engineering accommodates electrical environments up to a maximum reverse voltage of 600V, alongside a steady-state forward current capacity of 3A. This combination directly supports reliable power rectification and directional signal management in both linear and switching circuit configurations. Critical for modern electronic workflows, the device adopts the DO-214AA (SMB) surface-mount package, streamlining automated placement and enabling compact, high-density PCB designs without thermal compromise.

At the material and junction level, the ER3JB-TP leverages proprietary silicon technology to balance reverse leakage and forward voltage drop, sustaining efficiency under repetitive stress while minimizing undesired heat generation. The diode’s construction is further refined for surge tolerance, protecting sensitive components under transient conditions such as load dumps or inductive kickbacks. Engineers employing the ER3JB-TP in bridge rectifiers, freewheeling diodes, or flyback converter snubber circuits experience reduced redesign cycles due to its performance stability and low reverse recovery time, which mitigates both switching losses and electromagnetic interference.

Deployments in advanced power electronics—such as industrial motor controllers, high-frequency switching power supplies, and voltage clamping across distributed power rails—have demonstrated resistance to premature failure modes commonly caused by solder reflow stress and cyclic temperature swings. Its form factor inherently supports reflow soldering with minimal tombstoning risk and optimal heat dissipation, ensuring device integrity across temperature and current extremes often encountered in field applications.

System architects frequently leverage the ER3JB-TP’s electrical profile to simplify design constraints around protection and energy routing, particularly in scenarios where legacy through-hole alternatives cannot achieve required board density or automated manufacturing throughput. The reduced parasitic inductance of the SMB footprint synergizes with its junction characteristics, yielding predictable conduction behavior and supporting deterministic circuit timing. The device's balance of voltage standoff and current conduction provides a versatile platform, especially advantageous in designs requiring both rugged input protection and efficient signal direction within tightly controlled form factors.

In sum, the ER3JB-TP embodies a synthesis of durability, performance, and assembly efficiency, providing a strategic solution for engineers targeting critical nodes within high-reliability and high-density electronic systems. Its configuration directly addresses project imperatives for elevated voltage tolerance, streamlined manufacturing, and circuit longevity, setting a benchmark among diodes in comparable application spaces.

Key Electrical and Mechanical Specifications of ER3JB-TP

Key electrical parameters define the ER3JB-TP’s operational envelope and inform its integration into robust circuit designs. The component’s 600V peak reverse voltage ensures a substantial safety margin against input transients, which frequently occur in industrial power conversion stages, surge-prone grid interfaces, and motor drive applications. This high blocking capability directly supports the ER3JB-TP’s performance in demanding rectification and reverse-polarity scenarios, especially where transient voltage suppression is non-negotiable. The rectifier’s forward current rating of 3A sustains continuous conduction mode in medium-power topologies, such as AC/DC adapters, auxiliary SMPS rails, and bridge circuits for single-phase motor drivers. Typical practice involves pairing the device with fast recovery or snubber networks in environments where surge current and switching speed critically impact efficiency and reliability.

Mechanically, the ER3JB-TP utilizes the DO-214AA (SMB) package, streamlining compatibility with modern automated SMD assembly. This form factor, incorporating a low-profile, leadless design, supports precision placement by standard pick-and-place equipment, reducing assembly variation and raising throughput. The package’s exposed cathode pad and asymmetric footprint optimize thermal coupling to the PCB, allowing enhanced heat dissipation through extensive copper pours or dedicated thermal vias. This feature is central when the rectifier operates near its upper current limits or when system cooling is constrained, as in compact consumer adapters or high-density industrial controls.

Thermal management and current derating are pivotal in deployed systems. Empirical load-testing has shown that maintaining adequate airflow across the PCB, combined with conservative derating below the absolute maximum forward current, prolongs device lifespan and improves overall system MTBF. Solder joint integrity and thermal cycling resilience are directly linked to PCB pad design and reflow profile optimization. Factoring in the reverse recovery characteristics and thermal impedance within SPICE models provides deeper insight into junction temperature rise under pulse conditions, which, if controlled, enables predictable operation over extended temperature ranges.

The ER3JB-TP fits well in scenarios balancing cost, compact assembly, and moderate voltage/current requirements. Its application extends naturally to low-side switching in inverters, relay driver clamping, and as output rectifiers in distributed power architectures. When considering overall system reliability, prioritizing precise PCB layout and proactive thermal planning unlocks the component’s full potential, transforming it from a discrete element into a design enabler within high-integrity power subsystems.

Application Scenarios and Engineering Considerations for ER3JB-TP Diode

The ER3JB-TP diode integrates high reverse voltage tolerance with a 3A forward current rating, presenting a versatile profile for demanding power system architectures. Its intrinsic characteristics—particularly robust breakdown voltage and consistent forward conduction—are leveraged in bridge rectification roles within AC-DC conversion blocks. In such contexts, the diode’s ability to withstand significant line voltage fluctuations and periodic overloads ensures operational stability and extended component lifespan.

At the device level, reverse recovery time and leakage current define suitability for fast-switching environments. When implemented in flyback topologies or freewheeling circuits serving inductive loads, the ER3JB-TP’s rapid response mitigates voltage spikes generated by coil discharge phenomena, suppressing transients and reducing electromagnetic interference. Such reliability in switching applications translates directly into decreased maintenance intervals for subsystems exposed to pulse-width modulation or cycling signal regimes.

From a thermal management perspective, the TO-220 or similar standardized packages facilitate heat extraction when combined with appropriate PCB copper plane sizing or auxiliary heatsinks. Accurate modeling of junction temperature under full load—including transient surges and ambient derating—is essential to avoid premature performance degradation. Empirical validation, such as thermal imaging during iterative prototype stress testing, can reveal latent bottlenecks in heat dissipation pathways that simulation alone may overlook.

Leakage current under high reverse bias is another operational constraint, especially in systems prioritized for low standby power consumption. Selecting circuit topologies that account for these microamp-level leakages can prevent cumulative losses in high-density energy storage or backup modules. The manufacturing process and passivation quality further influence consistency in these metrics, recommending batch-level performance screening for mission-critical deployments.

The synergy between electrical robustness and package-level thermal dynamics gives the ER3JB-TP an edge in environments covering both intermittent surge loading and continuous throughput, such as industrial automation, renewable energy grid tie-in, and vehicular onboard charging systems. For designers optimizing for reliability under both electrical overstress and temperature cycling, system-level integration must balance diode selection with adjacent component tolerances, ensuring cohesive energy management throughout fluctuating operational profiles.

A subtle yet impactful insight is the diode’s capacity to enhance overall efficiency and system resilience when paired with appropriate control strategies and layered redundancy. By embedding device performance parameters into predictive maintenance algorithms and real-time fault monitoring, long-term reliability and reduced operational risk are achieved beyond the component datasheet recommendations.

Potential Equivalent/Replacement Models for ER3JB-TP

When considering alternatives to the ER3JB-TP, the selection process hinges on overlapping core specifications. Key parameters include reverse voltage and forward current ratings, which must match or exceed those of the original part to maintain robustness under operational stresses. Equivalency demands compatibility with DO-214AA (SMB) surface-mount packaging to avoid rework in automated assembly lines and simplify PCB design continuity. Components such as the 1N5822, S3J, or similar fast recovery diodes often provide comparable electrical characteristics and occupy the same footprint, but detailed comparison is essential.

A nuanced evaluation requires careful scrutiny of surge current capability. Diodes experience momentary overcurrents during power-on or transient faults—only models with at least the same non-repetitive surge rating as the ER3JB-TP prevent premature breakdown. Experienced practitioners consistently inspect reverse recovery times through manufacturer characterization curves, as fast switching circuits demand minimal carrier storage to reduce EMI and power losses; failure to align this parameter with the original can subtly compromise high-frequency performance.

Environmental factors elevate the complexity of cross-selection. Reliability in demanding conditions depends on compliance with RoHS, temperature derating curves, and certifications aligned with target markets—features that are not always evident in basic datasheet tables. Manufacturers sometimes vary in their definitions of maximum junction temperature or humidity resistance for nominally similar parts, so an implicit best practice is to check qualification history, especially for critical deployments in automotive or telecom.

Attention to subtle factors, such as pad metallization and solder reflow profiles, surfaces during qualification stages. Engineering teams that systematically review manufacturer application notes and track production test feedback minimize latent compatibility problems. For example, some SMB diodes use slightly different lead frame alloys that influence thermal cycling reliability—early identification of these differences is crucial for high-performance designs.

A strong recommendation for downstream success involves integrating field-proven alternatives only after reviewing accelerated life data and real-world stress results. In practice, attention to lot traceability and secondary source validation provides assurance against obsolescence, especially amid ongoing supply chain turbulence. Adopting this layered evaluation—beginning with electrical equivalence, then progressing to reliability verdicts and downstream manufacturability—consistently yields replacement choices that fully respect the original design’s intent and resilience.

Conclusion

The ER3JB-TP presents a well-balanced solution for modern power management and circuit protection requirements, driven by its 600V reverse voltage and 3A forward current capabilities. The underlying design leverages the characteristics of fast recovery epitaxial construction, which ensures swift switching response and minimized reverse recovery losses. This directly translates to efficiency gains in switching power supplies, motor drives, and high-frequency inverters, where low forward voltage drop and controlled leakage are critical parameters.

Integrating the ER3JB-TP in compact yet thermally demanding applications is facilitated by the DO-214AA (SMB) package. This surface mount format enhances solder joint reliability under repetitive thermal cycling and supports automated assembly flows without introducing complexity. In practical deployment, consistent mechanical alignment and uniform temperature dissipation are observed, lowering the risk of conductive path fatigue and intermittent faults. Experience indicates that the device’s moderate junction capacitance also minimizes signal distortion in mixed analog/digital environments.

When evaluating diodes for new or upgraded circuits, the ER3JB-TP’s compatibility with established industry qualification protocols simplifies supply chain decisions. Its performance envelope ensures that transient surges and inductive spike mitigation do not require extensive margining, streamlining protection circuit design. The balance between electrical endurance and form factor efficiency directly contributes to longer service life in applications ranging from PV inverters to industrial control modules.

While alternative diodes may provide narrower performance windows or advanced features at greater cost, the ER3JB-TP’s blend of durability, predictable switching behavior, and manufacturability positions it as a preferred choice for systems targeting reliability without overengineering. The device exemplifies a pragmatic approach to component selection: focusing on proven silicon processes and assembly alignment to streamline product development cycles and long-term field support.

More expand-more

Catalog

1. Introduction to the ER3JB-TP Series Diode from Micro Commercial Co2. Detailed Product Description of the ER3JB-TP3. Key Electrical and Mechanical Specifications of ER3JB-TP4. Application Scenarios and Engineering Considerations for ER3JB-TP Diode5. Potential Equivalent/Replacement Models for ER3JB-TP6. Conclusion

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Frequently Asked Questions (FAQ)

Can the ER3JB-TP diode be safely used in a 480V AC rectification circuit with transient voltage spikes up to 650V, and what derating or protection measures should I consider to avoid premature failure?

The ER3JB-TP has a 600V DC reverse voltage rating, which is below your 650V transient spikes, making it unsuitable for direct use in this application without additional protection. Even brief overvoltage events can cause avalanche breakdown. To safely use the ER3JB-TP in a 480V AC system, implement a robust snubber circuit (e.g., RC network across the diode) and consider a TVS diode rated for >700V clamping voltage. Alternatively, select a higher-voltage diode like the Vishay VS-3JBV or ON Semiconductor MURS360T3G (600V diodes are marginal here; 650–700V+ is preferred). Always derate the ER3JB-TP’s Vr by at least 20% in high-spike environments—meaning do not exceed 480V continuous reverse voltage.

I’m replacing a failed STMicroelectronics STTH3R06S in a switch-mode power supply—will the Micro Commercial Co ER3JB-TP be a reliable drop-in replacement despite different trr and leakage specs?

While both are 600V, 3A fast-recovery diodes in SMB packages, the ER3JB-TP has a faster reverse recovery time (35ns vs. ~50ns for STTH3R06S) and lower leakage (5µA vs. 10µA), which may seem favorable. However, the STTH3R06S is optimized for soft recovery, reducing EMI in hard-switching topologies. The ER3JB-TP’s sharper recovery can increase voltage ringing and EMI, potentially destabilizing feedback loops or exceeding MOSFET voltage ratings. Verify your layout’s parasitic inductance and consider adding a small snubber. Also, confirm thermal performance—the ER3JB-TP’s 1.7V forward drop at 3A is slightly higher than the STTH3R06S’s 1.5V, leading to ~6% more conduction loss. Test thoroughly under full load and transient conditions before full deployment.

Is the ER3JB-TP suitable for high-frequency rectification above 100kHz in a synchronous buck converter, given its 35ns trr and 45pF junction capacitance?

The ER3JB-TP’s 35ns reverse recovery time is acceptable for frequencies up to ~150kHz in non-synchronous applications, but its 45pF capacitance at 4V becomes significant at higher frequencies, contributing to switching losses and potential cross-conduction in synchronous topologies. In a synchronous buck converter, body diode conduction during dead time is critical—here, the ER3JB-TP is not ideal due to higher Qrr (not specified, but inferred from trr) compared to ultra-fast or SiC Schottky alternatives like the C3D02060A. For >100kHz operation, consider diodes with lower Qrr and capacitance, or use a dedicated synchronous rectifier MOSFET. If you must use the ER3JB-TP, minimize dead time and ensure tight thermal management, as switching losses will rise disproportionately with frequency.

What are the long-term reliability risks of using the ER3JB-TP in an outdoor solar inverter exposed to daily thermal cycling from -20°C to 85°C ambient, and how does its MSL 1 rating impact assembly?

The ER3JB-TP’s operating junction range (-50°C to 150°C) comfortably covers your ambient extremes, but repeated thermal cycling induces mechanical stress at the solder joints due to CTE mismatch between the SMB package and PCB. Over time, this can lead to solder fatigue and increased forward voltage drop or open-circuit failure. Mitigate this by using a PCB with balanced layer stack-up, thermal vias under the pad, and conformal coating to reduce moisture-induced corrosion. The MSL 1 (unlimited floor life) rating simplifies assembly—no baking or dry packing is required, reducing logistics risk. However, ensure your reflow profile stays within the peak temperature limits (typically 260°C max) to avoid delamination. For mission-critical solar applications, consider periodic thermal imaging during burn-in to detect early degradation.

Can I parallel two ER3JB-TP diodes to achieve 6A output in a compact design, and what matching or ballast techniques are needed to ensure current sharing?

Paralleling ER3JB-TP diodes is not recommended without careful design due to inherent forward voltage mismatch (even within tolerance, ΔVf can be 50–100mV at 3A), leading to one diode carrying significantly more current and thermal runaway. If you must parallel them, use individual current-balancing resistors (e.g., 0.1Ω, 2W each in series with each diode) to force sharing, accepting a ~0.3V drop and added power loss. Alternatively, select a single higher-current diode like the Diodes Inc. SBR3U60P1 (3A, 600V, SMB) or move to a DPAK package such as the ON Semiconductor MURB360T4G (6A, 600V). Always place paralleled ER3JB-TP units on a common heatsink with symmetrical layout to minimize thermal coupling asymmetry. Validate current sharing with thermal imaging under full load.

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