STS2DPF80 Equivalent & Substitute Parts

Part Overview

The STS2DPF80 is a dual P-channel MOSFET array manufactured by STMicroelectronics, rated for 80V drain-to-source voltage and 2A continuous drain current. This device is part of the STripFET™ series and is configured as a logic-level gate MOSFET in an 8-SOIC surface mount package. The product is classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support, maintenance, and production continuity.

Substiute Parts

STS2DPF80

STMicroelectronicsIn Stock: 2736STS2DPF80 Datasheet

Current PartRFQ

SI4948BEY-T1-E3

Vishay SiliconixIn Stock: 15615SI4948BEY-T1-E3 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the STS2DPF80 is determined by the following critical parameters:

Mandatory Compatibility Criteria:

• Configuration: Dual P-channel MOSFET array
• Package: 8-SOIC surface mount form factor
• Technology: Metal oxide MOSFET with logic-level gate operation
• Drain-to-source voltage rating: Must equal or exceed 80V
• Continuous drain current: Must equal or exceed 2A at 25°C
• On-state resistance (Rds On): Must not exceed 250mOhm at specified conditions
• Gate threshold voltage: Must not exceed 4V at 250µA
• Gate charge: Must not exceed 20nC at 10V
• Input capacitance: Must not exceed 739pF at 25V
• Maximum power dissipation: Must equal or exceed 2.5W
• Compliance: RoHS3 compliant, MSL 1 rating

The SI4948BEY-T1-E3 is identified as a substitute part. However, this device operates at a reduced voltage rating (60V Vdss) compared to the STS2DPF80 (80V Vdss). This represents a voltage derating and is applicable only in applications where the actual operating voltage does not exceed 60V. The SI4948BEY-T1-E3 provides superior current handling (2.4A versus 2A) and lower on-state resistance (120mOhm versus 250mOhm), making it suitable for lower-voltage applications requiring equivalent or improved performance characteristics.

Parameter Comparison

Engineering Selection Recommendations

STS2DPF80 (Primary Part - Obsolete Status)

The STS2DPF80 is classified as obsolete. Existing inventory is available (2693 pcs), but long-term supply cannot be guaranteed. This part is suitable for maintenance and repair of existing systems where the 80V voltage rating and 2.5W power dissipation are required specifications. The device is RoHS3 compliant and carries MSL 1 rating, indicating no moisture sensitivity constraints.

SI4948BEY-T1-E3 (Active Substitute)

The SI4948BEY-T1-E3 is an active product with robust inventory availability (15544 pcs). This substitute is applicable in applications where the maximum operating voltage does not exceed 60V. The device offers improved electrical performance with lower on-state resistance (120mOhm versus 250mOhm) and higher continuous drain current capability (2.4A versus 2A). The SI4948BEY-T1-E3 operates across an extended temperature range (-55°C to 175°C) compared to the STS2DPF80 (150°C maximum). Both devices share identical packaging (8-SOIC), identical MSL rating (1), and identical RoHS3 compliance status.

Selection Criteria:

Use the STS2DPF80 only if existing inventory is available and the application requires the full 80V voltage rating. For new designs or applications operating at 60V or below, the SI4948BEY-T1-E3 is the recommended selection due to active product status, superior electrical characteristics, and extended temperature range.

Frequently Asked Questions (FAQ)

Q: Can the SI4948BEY-T1-E3 be used as a direct replacement for the STS2DPF80?

A: The SI4948BEY-T1-E3 is a functional substitute only in applications where the maximum drain-to-source voltage does not exceed 60V. The STS2DPF80 is rated for 80V operation. If your circuit operates at voltages above 60V, the SI4948BEY-T1-E3 is not suitable. Both devices share identical 8-SOIC packaging and pinout compatibility.

Q: What are the key electrical differences between these two parts?

A: The primary difference is voltage rating: STS2DPF80 operates at 80V maximum, while SI4948BEY-T1-E3 operates at 60V maximum. The SI4948BEY-T1-E3 provides superior on-state resistance (120mOhm versus 250mOhm) and higher current capability (2.4A versus 2A). The SI4948BEY-T1-E3 also features a lower gate threshold voltage (3V versus 4V) and an extended operating temperature range.

Q: Are both parts RoHS compliant?

A: Yes. Both the STS2DPF80 and SI4948BEY-T1-E3 are RoHS3 compliant and carry MSL 1 (unlimited moisture sensitivity) ratings. Both are suitable for applications requiring environmental compliance certification.

Q: What is the package compatibility between these parts?

A: Both devices are housed in 8-SOIC surface mount packages with identical physical dimensions (0.154" width, 3.90mm). PCB footprints and land patterns are identical, allowing direct physical substitution without layout modifications.

Q: Why is the STS2DPF80 classified as obsolete?

A: The STS2DPF80 is an older STripFET™ series device. STMicroelectronics has transitioned to newer MOSFET technologies. While existing inventory is available, the manufacturer no longer produces this part. The SI4948BEY-T1-E3 represents the active alternative from Vishay Siliconix using TrenchFET® technology.

Q: Can I use the SI4948BEY-T1-E3 in a 80V application?

A: No. The SI4948BEY-T1-E3 is rated for a maximum of 60V drain-to-source voltage. Operating this device above 60V violates the absolute maximum ratings and will result in device failure. The STS2DPF80 must be used for applications requiring 80V operation.

Q: What is the impact of the lower on-state resistance in the SI4948BEY-T1-E3?

A: Lower on-state resistance (120mOhm versus 250mOhm) results in reduced power dissipation and improved efficiency. In switching applications, this translates to lower heat generation and reduced thermal management requirements. This is a performance advantage when voltage ratings are compatible.

Q: Are there any gate drive considerations when switching between these parts?

A: Both devices feature logic-level gate operation with similar gate threshold voltages (4V for STS2DPF80, 3V for SI4948BEY-T1-E3). Gate charge specifications are comparable (20nC versus 22nC at 10V), indicating similar gate drive requirements. Existing gate drive circuits designed for the STS2DPF80 are compatible with the SI4948BEY-T1-E3.