STS2DPF80 >
STS2DPF80
STMicroelectronics
MOSFET 2P-CH 80V 2A 8SOIC
2736 Pcs New Original In Stock
Mosfet Array 80V 2A 2.5W Surface Mount 8-SOIC
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STS2DPF80 STMicroelectronics
5.0 / 5.0 - (467 Ratings)

STS2DPF80

Product Overview

12875620

DiGi Electronics Part Number

STS2DPF80-DG
STS2DPF80

Description

MOSFET 2P-CH 80V 2A 8SOIC

Inventory

2736 Pcs New Original In Stock
Mosfet Array 80V 2A 2.5W Surface Mount 8-SOIC
Quantity
Minimum 1

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In Stock (All prices are in USD)
  • QTY Target Price Total Price
  • 1 1.4250 1.4250
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STS2DPF80 Technical Specifications

Category Transistors, FETs, MOSFETs, FET, MOSFET Arrays

Manufacturer STMicroelectronics

Packaging Cut Tape (CT) & Digi-Reel®

Series STripFET™

Product Status Obsolete

Technology MOSFET (Metal Oxide)

Configuration 2 P-Channel (Dual)

FET Feature Logic Level Gate

Drain to Source Voltage (Vdss) 80V

Current - Continuous Drain (Id) @ 25°C 2A

Rds On (Max) @ Id, Vgs 250mOhm @ 1A, 10V

Vgs(th) (Max) @ Id 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds 739pF @ 25V

Power - Max 2.5W

Operating Temperature 150°C (TJ)

Mounting Type Surface Mount

Package / Case 8-SOIC (0.154", 3.90mm Width)

Supplier Device Package 8-SOIC

Base Product Number STS2D

Datasheet & Documents

HTML Datasheet

STS2DPF80-DG

Environmental & Export Classification

RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095

Additional Information

Other Names
STS2DPF80-DG
-497-8040-1
-497-8040-2
497-8040-6
-497-8040-6
497-8040-2
497-8040-1
Standard Package
2,500

Alternative Parts

View Details
PART NUMBER
MANUFACTURER
QUANTITY AVAILABLE
DiGi PART NUMBER
UNIT PRICE
SUBSTITUTE TYPE
SI4948BEY-T1-E3
Vishay Siliconix
15615
SI4948BEY-T1-E3-DG
0.0060
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5.0/5.0-(Show up to 5 Ratings)
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December 02, 2025
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Frequently Asked Questions (FAQ)

Can the STS2DPF80 be used in high-temperature environments where the junction temperature approaches 150°C, and what design considerations are needed to avoid thermal runaway in a dual P-channel configuration?

Yes, the STS2DPF80 is rated for a maximum junction temperature of 150°C, making it suitable for high-temperature operation. However, when operating near this limit, ensure adequate PCB copper for thermal dissipation—use thermal vias and wide traces connected to drain pads. In dual P-channel configurations, uneven current sharing between channels can lead to localized heating; balance load distribution and consider derating power dissipation above 70°C ambient. Monitor Rds(on) variation with temperature, as it increases with heat and may affect efficiency in logic-level switching applications.

Is the STS2DPF80 a viable drop-in replacement for the SI4948BEY-T1-E3 in a 24V motor control circuit with 1.5A peak load, and what are the key differences affecting reliability?

The STS2DPF80 can function as a replacement for the SI4948BEY-T1-E3 in 24V motor control, but with critical trade-offs. Both are dual P-channel 80V MOSFETs with logic-level gates, yet the STS2DPF80 has a higher Rds(on) of 250mΩ vs. SI4948BEY-T1-E3’s 130mΩ, increasing conduction losses and temperature rise under 1.5A loads. Additionally, the STS2DPF80 is marked as obsolete—use only for legacy repair, not new designs. Ensure thorough thermal evaluation and consider lifetime availability risks.

How does the 20nC gate charge of the STS2DPF80 impact switching performance in high-frequency PWM applications, and what driver compatibility issues should be anticipated?

With a gate charge (Qg) of 20nC at 10V, the STS2DPF80 is not ideal for high-frequency PWM (e.g., >100kHz), as higher Qg increases switching losses and gate driver power requirements. Use a strong gate driver capable of sourcing/sinking at least 50mA to minimize transition times and prevent shoot-through in H-bridge or load-switching circuits. Avoid weak microcontroller pins; instead, pair the STS2DPF80 with dedicated drivers like TC4427 to reduce switching stress and enhance efficiency in 8-SOIC surface-mount designs.

What are the risks of using the STS2DPF80 in a battery-powered system operating at 3.3V logic, and does the logic-level gate guarantee full enhancement at this voltage?

Although the STS2DPF80 features a logic-level gate, its Rds(on) is specified at Vgs = 10V. At 3.3V, the device will not be fully enhanced—expect significantly higher Rds(on), potentially exceeding 1Ω, leading to excessive heat and voltage drop. The gate threshold (Vgs(th)) max is 4V, meaning it may barely turn on at 3.3V under high temperature or process variation. For reliable 3.3V operation, consider gate-boost circuits or a more suitable low-threshold P-MOSFET. The STS2DPF80 is better suited for 5V logic systems.

Given that the STS2DPF80 is obsolete, what are the long-term reliability and supply chain risks when designing it into a new production line, and what alternatives should be considered?

Using the STS2DPF80 in new designs carries significant risk due to its obsolete status—STMicroelectronics no longer guarantees supply, increasing chance of sudden unavailability. For long-term reliability, consider obsolescence mitigation: stockpile or qualify second sources like the SI4948BEY-T1-E3 (Vishay), which offers lower Rds(on) and active status. Alternatively, redesign with modern pin-to-pin equivalents such as the DMG2305LQ (Diodes Inc.) with better 3.3V performance and availability to ensure sustainable production and reduced lifecycle cost.

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