S4J R7G Equivalent & Substitute Parts

Part Overview

The S4J R7G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 600 V DC reverse voltage and 4 A average rectified current in a surface mount DO-214AB (SMC) package. This part is discontinued at DiGi Electronics, necessitating identification of equivalent and substitute components for ongoing design and procurement requirements. Substitute parts are selected based on matching or exceeding electrical performance parameters while maintaining package compatibility and compliance certifications.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	600	V
Current - Average Rectified (Io)	4	A
Voltage - Forward (Vf) (Max) @ If	1.15 @ 4 A	V
Speed	Fast Recovery ≤ 500ns, > 200mA (Io)	—
Current - Reverse Leakage @ Vr	10	µA @ 600 V
Capacitance @ Vr, F	60	pF @ 4V, 1MHz
Package / Case	DO-214AB, SMC	—
Mounting Type	Surface Mount	—
Operating Temperature - Junction	-55 to 150	°C
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the S4J R7G is determined by the following critical parameters:

Mandatory Matching Parameters:

Voltage - DC Reverse (Vr) (Max): 600 V minimum
Package / Case: DO-214AB (SMC) surface mount
Mounting Type: Surface Mount
RoHS Status: ROHS3 Compliant
Moisture Sensitivity Level: 1 (Unlimited)

Current Rating Consideration: The S4J R7G is rated for 4 A average rectified current. Substitute parts are grouped into two categories:

Direct Equivalent (4 A Rating): Parts with 4 A or higher current rating maintain full electrical compatibility with the original design without derating.
Functional Substitute (3 A Rating): Parts with 3 A current rating operate at reduced current capacity. These are suitable only for applications where the circuit design permits operation at 3 A or lower.

Speed Classification: The S4J R7G features fast recovery characteristics (≤ 500ns). Substitute parts are classified as fast recovery (≤ 500ns) or standard recovery (> 500ns). Fast recovery types maintain switching performance; standard recovery types exhibit longer reverse recovery times and may affect high-frequency circuit performance.

Forward Voltage (Vf): The S4J R7G specifies 1.15 V maximum forward voltage at 4 A. Substitute parts with higher Vf values (1.3 V, 1.7 V) result in increased power dissipation and heat generation in the application circuit.

Parameter Comparison

Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ If [V]	Speed	Reverse Recovery Time [ns]	Ir @ Vr [µA]	Package	Product Status
S4J R7G	Taiwan Semiconductor	600	4	1.15 @ 4 A	Fast Recovery ≤ 500ns	—	10 @ 600 V	DO-214AB	Discontinued
S4J V7G	Taiwan Semiconductor	600	4	1.15 @ 4 A	Standard Recovery > 500ns	1500	10 @ 600 V	DO-214AB	Discontinued
CFRC305-G	Comchip Technology	600	3	1.3 @ 3 A	Fast Recovery ≤ 500ns	250	5 @ 600 V	DO-214AB	Active
CGRC505-G	Comchip Technology	600	5	1.15 @ 5 A	Standard Recovery > 500ns	—	10 @ 600 V	DO-214AB	Active
CSFC305-G	Comchip Technology	600	3	1.3 @ 3 A	Fast Recovery ≤ 500ns	50	5 @ 600 V	DO-214AB	Active
CURC305-G	Comchip Technology	600	3	1.7 @ 3 A	Fast Recovery ≤ 500ns	75	5 @ 600 V	DO-214AB	Active
ER3J-TP	Micro Commercial Co	600	3	1.7 @ 3 A	Fast Recovery ≤ 500ns	35	5 @ 600 V	DO-214AB	Active
ES3J	Good-Ark Semiconductor	600	3	1.7 @ 3 A	Fast Recovery ≤ 500ns	35	10 @ 600 V	DO-214AB	Active
FR3J-TP	Micro Commercial Co	600	3	1.3 @ 3 A	Fast Recovery ≤ 500ns	250	10 @ 600 V	DO-214AB	Active
MURS360-E3/57T	Vishay General Semiconductor	600	3	1.28 @ 3 A	Fast Recovery ≤ 500ns	75	10 @ 600 V	DO-214AB	Active
MURS360-E3/9AT	Vishay General Semiconductor	600	3	1.28 @ 3 A	Fast Recovery ≤ 500ns	75	10 @ 600 V	DO-214AB	Active

Engineering Selection Recommendations

Direct Equivalent - Preferred Selection:

S4J V7G (Taiwan Semiconductor Corporation) is the direct equivalent to the S4J R7G. Both parts share identical voltage and current ratings (600 V, 4 A), forward voltage characteristics (1.15 V @ 4 A), and package specifications. The primary difference is recovery speed classification: S4J V7G operates as standard recovery (> 500ns, 1500 ns typical) versus the fast recovery (≤ 500ns) of the S4J R7G. Both parts are discontinued at DiGi Electronics but remain functionally equivalent for applications where recovery speed is not a critical design parameter.

Higher Current Rating - Upgraded Substitute:

CGRC505-G (Comchip Technology) provides a 5 A current rating, exceeding the 4 A requirement of the S4J R7G. This part maintains 600 V reverse voltage, 1.15 V forward voltage at rated current, and DO-214AB package compatibility. CGRC505-G is active in production and ROHS3 compliant. The standard recovery characteristic (> 500ns) matches the S4J V7G profile. This part is suitable for applications requiring current margin above the original 4 A specification.

Fast Recovery 3 A Substitutes - Current-Limited Applications:

The following parts operate at 3 A current rating with fast recovery characteristics (≤ 500ns), suitable for applications where circuit design permits 3 A operation:

CSFC305-G (Comchip Technology): 50 ns reverse recovery time, 1.3 V forward voltage
ER3J-TP (Micro Commercial Co): 35 ns reverse recovery time, 1.7 V forward voltage, extended temperature range (-50°C to 175°C)
ES3J (Good-Ark Semiconductor): 35 ns reverse recovery time, 1.7 V forward voltage, highest inventory availability (23,710 pcs)
FR3J-TP (Micro Commercial Co): 250 ns reverse recovery time, 1.3 V forward voltage
MURS360-E3/57T (Vishay General Semiconductor): 75 ns reverse recovery time, 1.28 V forward voltage, extended temperature range (-65°C to 175°C)
MURS360-E3/9AT (Vishay General Semiconductor): 75 ns reverse recovery time, 1.28 V forward voltage, extended temperature range (-65°C to 175°C), tape & reel packaging

Fast Recovery 3 A Substitutes - Higher Forward Voltage:

CFRC305-G (Comchip Technology): 250 ns reverse recovery time, 1.3 V forward voltage
CURC305-G (Comchip Technology): 75 ns reverse recovery time, 1.7 V forward voltage

All substitute parts listed maintain ROHS3 compliance, MSL 1 (Unlimited) moisture sensitivity, and DO-214AB surface mount package compatibility. Selection between active substitutes depends on application requirements for current capacity, recovery speed, forward voltage dissipation, and temperature operating range.

Frequently Asked Questions (FAQ)

Q: Can the S4J R7G be replaced with a 3 A rated diode?

A: Substitution with 3 A rated parts is permissible only if the application circuit design operates at 3 A or lower average rectified current. The S4J R7G is rated for 4 A; operation of a 3 A part at 4 A exceeds its specification and results in excessive junction temperature and reduced component reliability. Circuit analysis must confirm that peak and average current demands do not exceed 3 A before selecting a 3 A substitute.

Q: What is the difference between fast recovery and standard recovery diodes?

A: Recovery speed refers to the reverse recovery time (trr), the interval required for a diode to transition from forward conduction to reverse blocking when the applied voltage reverses. Fast recovery diodes (≤ 500ns) switch more rapidly, reducing switching losses and enabling higher frequency operation. Standard recovery diodes (> 500ns) exhibit longer transition times, generating increased switching losses at high frequencies. The S4J R7G specifies fast recovery; substitution with standard recovery types (such as S4J V7G) is acceptable only in low-frequency applications where switching losses are not a design constraint.

Q: Are all substitute parts available in the same packaging format?

A: All substitute parts listed use the DO-214AB (SMC) surface mount package, ensuring mechanical and electrical compatibility with the original S4J R7G footprint. Packaging format differs between Cut Tape (CT) and Tape & Reel (TR) options. Cut Tape packaging is suitable for small-quantity procurement and manual assembly; Tape & Reel packaging is standard for automated pick-and-place assembly. Verify packaging format availability with the supplier before procurement.

Q: How does forward voltage affect circuit performance?

A: Forward voltage (Vf) determines the voltage drop across the diode during forward conduction. Higher Vf values increase power dissipation (P = Vf × I) and heat generation. The S4J R7G specifies 1.15 V @ 4 A. Substitutes with 1.3 V or 1.7 V forward voltage ratings dissipate additional power in the application. For example, at 4 A operation, a 1.7 V diode dissipates 0.55 V × 4 A = 2.2 W additional power compared to the 1.15 V original. Thermal design must accommodate this increased dissipation, or circuit current must be reduced to maintain equivalent power levels.

Q: What is the significance of reverse leakage current?

A: Reverse leakage current (Ir) is the small current flowing through the diode when reverse voltage is applied. The S4J R7G specifies 10 µA @ 600 V. Higher leakage currents increase standby power consumption and heat generation. Most substitutes specify 5 µA or 10 µA leakage, representing negligible difference in typical applications. Leakage current increases with junction temperature; applications operating at elevated temperatures may experience higher leakage than specified at 25°C reference conditions.

Q: Can the S4J R7G be replaced with a higher voltage rated diode?

A: Substitution with higher voltage rated diodes (such as 800 V or 1000 V parts) is electrically permissible but not recommended. Higher voltage ratings typically result in increased forward voltage drop, higher reverse leakage current, and larger junction capacitance. These characteristics degrade circuit efficiency and switching performance without providing functional benefit in a 600 V application. Maintain voltage rating at or near the original 600 V specification.

Q: What does ROHS3 compliance indicate?

A: ROHS3 (Restriction of Hazardous Substances Directive 3) compliance certifies that the component contains no lead (Pb), cadmium (Cd), hexavalent chromium (Cr6+), polybrominated biphenyls (PBB), polybrominated diphenyl ethers (PBDE), or bis(2-ethylhexyl) phthalate (DEHP), dibutyl phthalate (DBP), benzyl butyl phthalate (BBP), or diisobutyl phthalate (DIBP) above specified thresholds. All substitute parts listed are ROHS3 compliant, meeting regulatory requirements for electronic equipment sold in the European Union and other jurisdictions adopting equivalent standards.

Q: What is Moisture Sensitivity Level (MSL) 1?

A: MSL 1 (Unlimited) indicates that the component has no moisture sensitivity restrictions. The part may be stored at any humidity level without requiring desiccant packaging or controlled storage conditions. This classification simplifies inventory management and procurement logistics compared to higher MSL ratings (MSL 2-6) that require controlled humidity storage and have limited shelf life after package opening.

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