S3J M6G Equivalent & Substitute Parts

Part Overview

The S3J M6G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 600 V DC reverse voltage and 3 A average rectified current in a surface mount DO-214AB (SMC) package. This part is discontinued at DiGi Electronics, necessitating identification of equivalent and substitute components for ongoing design support and procurement.

The S3J M6G operates with standard recovery characteristics (>500 ns) and is suitable for general rectification applications requiring 600 V blocking capability at 3 A current levels. RoHS3 compliance and unlimited moisture sensitivity rating (MSL 1) support broad industrial and commercial deployment.

Substiute Parts

S3J M6G
Taiwan Semiconductor CorporationIn Stock: 1088S3J M6G Datasheet
S3J M6G
Current Part
S3J V7G
Taiwan Semiconductor CorporationIn Stock: 2452S3J V7G Datasheet
S3J V7G
Parametric Equivalent
S3JH
Taiwan Semiconductor CorporationIn Stock: 3934S3JH Datasheet
S3JH
Parametric Equivalent
CGRC505-G
Comchip TechnologyIn Stock: 770CGRC505-G Datasheet
CGRC505-G
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ER3J-TP
Micro Commercial CoIn Stock: 4223ER3J-TP Datasheet
ER3J-TP
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MURS360-E3/57T
Vishay General Semiconductor - Diodes DivisionIn Stock: 18334MURS360-E3/57T Datasheet
MURS360-E3/57T
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MURS360-E3/9AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 3656MURS360-E3/9AT Datasheet
MURS360-E3/9AT
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RS3J-13-F
Diodes IncorporatedIn Stock: 17488RS3J-13-F Datasheet
RS3J-13-F
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RS3JB-13-F
Diodes IncorporatedIn Stock: 3501RS3JB-13-F Datasheet
RS3JB-13-F
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RS3JHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 2104RS3JHE3_A/H Datasheet
RS3JHE3_A/H
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RS3JHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 1217RS3JHE3_A/I Datasheet
RS3JHE3_A/I
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S3J-13-F
Diodes IncorporatedIn Stock: 101108S3J-13-F Datasheet
S3J-13-F
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S3J-TP
Micro Commercial CoIn Stock: 39795S3J-TP Datasheet
S3J-TP
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S3JB-13-F
Diodes IncorporatedIn Stock: 78445S3JB-13-F Datasheet
S3JB-13-F
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S5JC-13-F
Diodes IncorporatedIn Stock: 299117S5JC-13-F Datasheet
S5JC-13-F
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S5JHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 71387S5JHE3_A/H Datasheet
S5JHE3_A/H
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S5JHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 32296S5JHE3_A/I Datasheet
S5JHE3_A/I
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S5JL-TP
Micro Commercial CoIn Stock: 2626S5JL-TP Datasheet
S5JL-TP
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SMLJ60S6-TP
Micro Commercial CoIn Stock: 1924SMLJ60S6-TP Datasheet
SMLJ60S6-TP
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STTH2R06S
STMicroelectronicsIn Stock: 20283STTH2R06S Datasheet
STTH2R06S
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STTH3L06S
STMicroelectronicsIn Stock: 17355STTH3L06S Datasheet
STTH3L06S
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STTH3R06S
STMicroelectronicsIn Stock: 7838STTH3R06S Datasheet
STTH3R06S
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VS-4ECH06-M3/9AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 21395VS-4ECH06-M3/9AT Datasheet
VS-4ECH06-M3/9AT
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VS-4ECU06-M3/9AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 2565VS-4ECU06-M3/9AT Datasheet
VS-4ECU06-M3/9AT
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VS-5ECU06-M3/9AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 31574VS-5ECU06-M3/9AT Datasheet
VS-5ECU06-M3/9AT
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S3J-E3/57T
Vishay General Semiconductor - Diodes DivisionIn Stock: 15301S3J-E3/57T Datasheet
S3J-E3/57T
Parametric Equivalent
S3J-E3/9AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 2299S3J-E3/9AT Datasheet
S3J-E3/9AT
Parametric Equivalent
S3J-M3/57T
Vishay General Semiconductor - Diodes DivisionIn Stock: 8325S3J-M3/57T Datasheet
S3J-M3/57T
Parametric Equivalent
S3J-M3/9AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 882S3J-M3/9AT Datasheet
S3J-M3/9AT
Parametric Equivalent
S3JHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 5863S3JHE3_A/H Datasheet
S3JHE3_A/H
Parametric Equivalent
S3JHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 5917S3JHE3_A/I Datasheet
S3JHE3_A/I
Parametric Equivalent
S3JHM3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 2301S3JHM3_A/H Datasheet
S3JHM3_A/H
Parametric Equivalent
S3JHM3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 751S3JHM3_A/I Datasheet
S3JHM3_A/I
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 3 A
Voltage - Forward (Vf) (Max) @ If 1.15 @ 3 A V
Reverse Recovery Time (trr) 1.5 µs
Current - Reverse Leakage @ Vr 5 µA @ 600 V
Capacitance @ Vr, F 30 pF @ 4V, 1MHz
Package / Case DO-214AB, SMC
Operating Temperature - Junction -55 to 150 °C
Technology Standard
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the S3J M6G is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

  • Voltage - DC Reverse (Vr) (Max): 600 V minimum
  • Current - Average Rectified (Io): 3 A minimum
  • Package / Case: DO-214AB (SMC) or compatible surface mount package
  • Operating Temperature - Junction: -55°C to 150°C minimum range
  • RoHS3 Compliance: Required

Secondary Compatibility Factors:

  • Voltage - Forward (Vf) (Max): Acceptable range 1.15 V to 1.7 V @ rated current
  • Reverse Recovery Time (trr): Standard recovery (>500 ns) or faster acceptable
  • Current - Reverse Leakage @ Vr: 5 µA to 10 µA @ 600 V acceptable
  • Mounting Type: Surface Mount required

Substitute parts are classified into two categories:

Parametric Equivalents: Parts with identical or superior electrical ratings and the same DO-214AB package, manufactured by Taiwan Semiconductor Corporation.

Similar Parts: Components from alternative manufacturers (Comchip Technology, Micro Commercial Co, Vishay General Semiconductor, Diodes Incorporated) meeting or exceeding the primary substitution criteria, with variations in recovery speed, forward voltage, or package designation (SMC vs. SMB).

Parameter Comparison

Manufacturer Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) [V] trr [µs/ns] Ir @ Vr [µA] Package Product Status
S3J M6G Taiwan Semiconductor 600 3 1.15 @ 3A 1.5 µs 5 @ 600V DO-214AB (SMC) Discontinued
S3J V7G Taiwan Semiconductor 600 3 1.15 @ 3A 1.5 µs 10 @ 600V DO-214AB (SMC) Discontinued
S3JH Taiwan Semiconductor 600 3 1.15 @ 3A 1.5 µs 10 @ 600V DO-214AB (SMC) Active
ER3J-TP Micro Commercial Co 600 3 1.7 @ 3A 35 ns 5 @ 600V DO-214AB (SMC) Active
MURS360-E3/57T Vishay General Semiconductor 600 3 1.28 @ 3A 75 ns 10 @ 600V DO-214AB (SMC) Active
MURS360-E3/9AT Vishay General Semiconductor 600 3 1.28 @ 3A 75 ns 10 @ 600V DO-214AB (SMC) Active
RS3J-13-F Diodes Incorporated 600 3 1.3 @ 3A 250 ns 5 @ 600V DO-214AB (SMC) Active
RS3JB-13-F Diodes Incorporated 600 3 1.3 @ 3A 250 ns 5 @ 600V DO-214AA (SMB) Active
RS3JHE3_A/H Vishay General Semiconductor 600 3 1.3 @ 2.5A 250 ns 10 @ 600V DO-214AB (SMC) Active
RS3JHE3_A/I Vishay General Semiconductor 600 3 1.3 @ 2.5A 250 ns 10 @ 600V DO-214AB (SMC) Active
CGRC505-G Comchip Technology 600 5 1.15 @ 5A Not specified 10 @ 600V DO-214AB (SMC) Active

Engineering Selection Recommendations

Recommended Primary Substitutes (Active Status, Taiwan Semiconductor):

The S3JH represents the optimal direct replacement for the discontinued S3J M6G. Both components are manufactured by Taiwan Semiconductor Corporation with identical electrical ratings (600 V, 3 A, 1.15 V forward voltage, 1.5 µs recovery time) and the same DO-214AB package. The S3JH is currently in active production status and available in Tape & Reel packaging. The S3JH includes AEC-Q101 automotive qualification, providing enhanced reliability documentation for applications requiring automotive-grade components.

The S3J V7G provides parametric equivalence with identical voltage, current, and recovery characteristics. This part remains discontinued at DiGi Electronics but maintains the same manufacturing lineage and package as the S3J M6G.

Recommended Secondary Substitutes (Active Status, Alternative Manufacturers):

For applications where component availability or supply chain diversification is required, the following active parts provide functional equivalence:

RS3J-13-F (Diodes Incorporated): Maintains 600 V / 3 A ratings with DO-214AB (SMC) package. Forward voltage is 1.3 V @ 3 A with 250 ns recovery time. Reverse leakage is 5 µA @ 600 V, matching the S3J M6G specification. Operating temperature range is -65°C to 150°C.

MURS360-E3/57T and MURS360-E3/9AT (Vishay General Semiconductor): Both provide 600 V / 3 A ratings in DO-214AB (SMC) package with 75 ns fast recovery time. Forward voltage is 1.28 V @ 3 A. Operating temperature extends to -65°C to 175°C. Available in Cut Tape (CT) and Tape & Reel (TR) packaging respectively.

ER3J-TP (Micro Commercial Co): Provides 600 V / 3 A ratings with 35 ns fast recovery time and 1.7 V forward voltage @ 3 A. Operating temperature range is -50°C to 175°C. Available in Tape & Reel packaging.

Package Consideration:

The RS3JB-13-F uses DO-214AA (SMB) package instead of DO-214AB (SMC). This represents a different physical footprint and is suitable only for designs where SMB package compatibility exists.

Higher Current Alternative:

The CGRC505-G (Comchip Technology) provides 5 A current rating at 600 V in DO-214AB package, suitable for applications requiring higher current capacity than the 3 A specification.

All recommended substitutes maintain RoHS3 compliance and MSL 1 (unlimited) moisture sensitivity rating.

Frequently Asked Questions (FAQ)

Q: Can the S3J V7G directly replace the S3J M6G?

A: The S3J V7G provides parametric equivalence with identical voltage (600 V), current (3 A), forward voltage (1.15 V @ 3 A), and recovery time (1.5 µs) specifications. Both use DO-214AB (SMC) packaging. However, the S3J V7G is also discontinued at DiGi Electronics. For active production parts, the S3JH is the recommended replacement.

Q: What is the difference between the S3JH and S3J M6G?

A: The S3JH and S3J M6G share identical electrical ratings (600 V, 3 A, 1.15 V forward voltage, 1.5 µs recovery time) and DO-214AB packaging. The primary differences are: (1) S3JH is in active production status while S3J M6G is discontinued; (2) S3JH includes AEC-Q101 automotive qualification; (3) S3JH specifies 10 µA reverse leakage versus 5 µA for S3J M6G, and 60 pF capacitance versus 30 pF. These differences remain within acceptable operating margins for general-purpose rectification applications.

Q: Can I use a fast recovery diode like MURS360-E3/57T instead of the S3J M6G?

A: Yes. The MURS360-E3/57T meets all primary substitution criteria: 600 V reverse voltage, 3 A current rating, and DO-214AB (SMC) package. The fast recovery characteristic (75 ns versus 1.5 µs) provides superior switching performance and reduced reverse recovery losses. Forward voltage is 1.28 V @ 3 A, slightly higher than the S3J M6G at 1.15 V. This substitution is suitable for applications where faster switching or lower switching losses provide system benefits.

Q: What is the difference between DO-214AB (SMC) and DO-214AA (SMB) packages?

A: DO-214AB (SMC) and DO-214AA (SMB) are different surface mount package outlines with different physical dimensions and PCB footprints. The RS3JB-13-F uses DO-214AA (SMB) package and is not a direct mechanical replacement for the S3J M6G, which requires DO-214AB (SMC). Use RS3JB-13-F only if your PCB design accommodates SMB package dimensions.

Q: Why does the CGRC505-G have a 5 A rating instead of 3 A?

A: The CGRC505-G is a higher current variant rated for 5 A average rectified current at 600 V. This part is classified as a similar component rather than a direct equivalent. It is suitable for applications requiring current capacity exceeding 3 A, or for designs where higher current margin is desired. The 5 A rating does not prevent use in 3 A applications; the component will operate within its thermal and electrical limits.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed in this reference maintain RoHS3 compliance and MSL 1 (unlimited) moisture sensitivity rating, consistent with the S3J M6G specifications.

Q: What is AEC-Q101 qualification and why does the S3JH have it?

A: AEC-Q101 is an automotive industry qualification standard for discrete semiconductors. The S3JH carries AEC-Q101 qualification, indicating it meets automotive-grade reliability and testing requirements. This qualification is optional for general-purpose applications but provides enhanced documentation and traceability for automotive and mission-critical designs. The S3J M6G does not specify AEC-Q101 qualification.

Q: Can I substitute a 600 V / 5 A diode in a circuit designed for 600 V / 3 A?

A: Yes. A higher current-rated component (5 A) operates safely in a 3 A application. The component will not exceed its current rating and will operate within acceptable thermal limits. The CGRC505-G (5 A, 600 V) is suitable for this application. Verify that forward voltage drop (1.15 V @ 5 A) and package dimensions are compatible with your circuit design.

Q: What recovery speed should I select for my application?

A: Recovery speed selection depends on application requirements. Standard recovery diodes (>500 ns, such as S3J M6G, S3JH) are suitable for low-frequency rectification and general-purpose applications. Fast recovery diodes (≤500 ns, such as MURS360 series, ER3J-TP) reduce switching losses and are preferred for higher-frequency switching applications, power factor correction circuits, and applications sensitive to reverse recovery current. Verify your circuit design requirements before selecting recovery speed.

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