RS3JB-13 Equivalent & Substitute Parts

Part Overview

The RS3JB-13 is a general-purpose rectifier diode manufactured by Diodes Incorporated, rated for 600 V DC reverse voltage and 3 A average rectified current in a surface mount SMB (DO-214AA) package. This part is classified as discontinued at DiGi Electronics, which necessitates identification of equivalent and substitute components for ongoing design support and procurement.

The RS3JB-13 features fast recovery characteristics with a reverse recovery time of 250 ns and operates across a junction temperature range of -65°C to 150°C. The part is RoHS non-compliant and carries an MSL rating of 1 (Unlimited).

Substiute Parts

RS3JB-13
Diodes IncorporatedIn Stock: 4336RS3JB-13 Datasheet
RS3JB-13
Current Part
RS3JB-13-F
Diodes IncorporatedIn Stock: 3501RS3JB-13-F Datasheet
RS3JB-13-F
Parametric Equivalent
ER3JB-TP
Micro Commercial CoIn Stock: 13395ER3JB-TP Datasheet
ER3JB-TP
MFR Recommended
MURS360BT3G
onsemiIn Stock: 35150MURS360BT3G Datasheet
MURS360BT3G
MFR Recommended
MURS360S-E3/52T
Vishay General Semiconductor - Diodes DivisionIn Stock: 25137MURS360S-E3/52T Datasheet
MURS360S-E3/52T
MFR Recommended
MURS360S-E3/5BT
Vishay General Semiconductor - Diodes DivisionIn Stock: 9686MURS360S-E3/5BT Datasheet
MURS360S-E3/5BT
MFR Recommended
S3JB-TP
Micro Commercial CoIn Stock: 28974S3JB-TP Datasheet
S3JB-TP
MFR Recommended
STTH1L06U
STMicroelectronicsIn Stock: 6645STTH1L06U Datasheet
STTH1L06U
MFR Recommended
STTH1R06U
STMicroelectronicsIn Stock: 81581STTH1R06U Datasheet
STTH1R06U
MFR Recommended
STTH2L06U
STMicroelectronicsIn Stock: 35392STTH2L06U Datasheet
STTH2L06U
MFR Recommended
STTH2R06U
STMicroelectronicsIn Stock: 20004STTH2R06U Datasheet
STTH2R06U
MFR Recommended
STTH3L06U
STMicroelectronicsIn Stock: 18378STTH3L06U Datasheet
STTH3L06U
MFR Recommended
STTH3R06U
STMicroelectronicsIn Stock: 10135STTH3R06U Datasheet
STTH3R06U
MFR Recommended

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 3 A
Voltage - Forward (Vf) (Max) @ If 1.3 @ 3 A V
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io) -
Reverse Recovery Time (trr) 250 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V µA
Capacitance @ Vr, F 50pF @ 4V, 1MHz pF
Package / Case DO-214AA, SMB -
Mounting Type Surface Mount -
Operating Temperature - Junction -65°C ~ 150°C °C
RoHS Status RoHS non-compliant -
Moisture Sensitivity Level (MSL) 1 (Unlimited) -

Substitute Part Grouping Explanation

Substitution of the RS3JB-13 is determined by the following critical parameters:

Mandatory Matching Parameters:

  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 3 A (or higher)
  • Package / Case: DO-214AA, SMB
  • Mounting Type: Surface Mount
  • Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)

Acceptable Variation Parameters:

  • Voltage - Forward (Vf) (Max) @ If: Within design margin tolerance
  • Reverse Recovery Time (trr): Lower values acceptable (improved performance)
  • Current - Reverse Leakage @ Vr: Lower values acceptable (improved performance)
  • Operating Temperature - Junction: Extended ranges acceptable
  • RoHS Status: Compliant versions preferred for new designs
  • Capacitance @ Vr, F: Minor variations acceptable

Substitute parts are grouped into two categories:

Category A - Direct Parametric Equivalents (3 A rated current): Parts with identical 600 V / 3 A ratings and fast recovery characteristics. These provide direct functional replacement with no circuit redesign required.

Category B - Functional Substitutes (Lower current ratings): Parts with 600 V reverse voltage but lower average rectified current ratings (1.5 A or 2 A). These are suitable only when circuit design permits operation at reduced current capacity.

Parameter Comparison

Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ If [V] trr [ns] Ir @ Vr [µA] Package Product Status RoHS Status
RS3JB-13 Diodes Incorporated 600 3 1.3 @ 3 A 250 5 @ 600 V DO-214AA, SMB Discontinued Non-compliant
RS3JB-13-F Diodes Incorporated 600 3 1.3 @ 3 A 250 5 @ 600 V DO-214AA, SMB Active ROHS3 Compliant
ER3JB-TP Micro Commercial Co 600 3 1.7 @ 3 A 35 5 @ 600 V DO-214AA, SMB Active ROHS3 Compliant
MURS360BT3G onsemi 600 3 1.25 @ 3 A 75 3 @ 600 V DO-214AA, SMB Active ROHS3 Compliant
S3JB-TP Micro Commercial Co 600 3 1.15 @ 3 A - 10 @ 600 V DO-214AA, SMB Active ROHS3 Compliant
MURS360S-E3/52T Vishay General Semiconductor - Diodes Division 600 1.5 1.45 @ 3 A 75 5 @ 600 V DO-214AA, SMB Active ROHS3 Compliant
MURS360S-E3/5BT Vishay General Semiconductor - Diodes Division 600 1.5 1.45 @ 3 A 75 5 @ 600 V DO-214AA, SMB Active ROHS3 Compliant
STTH1R06U STMicroelectronics 600 1 1.7 @ 1 A 45 1 @ 600 V DO-214AA, SMB Active ROHS3 Compliant
STTH1L06U STMicroelectronics 600 1 1.3 @ 1 A 80 1 @ 600 V DO-214AA, SMB Active ROHS3 Compliant
STTH2L06U STMicroelectronics 600 2 1.3 @ 2 A 85 2 @ 600 V DO-214AA, SMB Active ROHS3 Compliant
STTH2R06U STMicroelectronics 600 2 1.7 @ 2 A 50 2 @ 600 V DO-214AA, SMB Active ROHS3 Compliant

Engineering Selection Recommendations

Primary Recommendation - Direct Equivalent:

RS3JB-13-F (Diodes Incorporated) is the direct parametric equivalent with identical electrical specifications. This part maintains the same 600 V / 3 A rating, forward voltage, and reverse recovery time as the original RS3JB-13. The primary distinction is product status (Active vs. Discontinued) and RoHS compliance (ROHS3 Compliant vs. Non-compliant). This part is suitable for direct substitution without circuit modification.

Secondary Recommendations - 3 A Rated Alternatives:

MURS360BT3G (onsemi) and ER3JB-TP (Micro Commercial Co) both provide 600 V / 3 A operation with improved reverse recovery time characteristics (75 ns and 35 ns respectively, compared to 250 ns for the original). Both are ROHS3 compliant and carry active product status. MURS360BT3G exhibits lower reverse leakage current (3 µA vs. 5 µA), while ER3JB-TP offers the fastest recovery time.

S3JB-TP (Micro Commercial Co) provides 600 V / 3 A operation with the lowest forward voltage (1.15 V @ 3 A) but operates with standard recovery speed (>500ns) rather than fast recovery. This part is suitable only when recovery speed is not a circuit requirement.

Lower Current Alternatives:

MURS360S-E3/52T and MURS360S-E3/5BT (Vishay General Semiconductor - Diodes Division) are rated for 600 V / 1.5 A operation. These parts are suitable only when circuit design permits operation at 50% of the original current capacity.

STTH1R06U, STTH1L06U (STMicroelectronics) are rated for 600 V / 1 A operation. STTH2L06U and STTH2R06U (STMicroelectronics) are rated for 600 V / 2 A operation. These parts are suitable only when circuit design permits operation at reduced current capacity.

All recommended alternatives carry ROHS3 compliance and active product status, supporting compliance requirements for new designs.

Frequently Asked Questions (FAQ)

Q: Can RS3JB-13-F be used as a direct replacement for RS3JB-13?

A: Yes. RS3JB-13-F is a parametric equivalent with identical electrical specifications: 600 V reverse voltage, 3 A average rectified current, 1.3 V forward voltage at 3 A, and 250 ns reverse recovery time. The part is packaged identically in DO-214AA SMB format. The primary difference is that RS3JB-13-F is ROHS3 compliant and carries active product status, whereas RS3JB-13 is discontinued and non-compliant.

Q: What is the difference between fast recovery and standard recovery diodes?

A: Recovery speed refers to the reverse recovery time (trr), which is the time required for a diode to transition from forward conduction to reverse blocking when the applied voltage reverses. Fast recovery diodes (≤500ns, >200mA) exhibit shorter recovery times, reducing switching losses and electromagnetic interference in high-frequency applications. Standard recovery diodes (>500ns) are suitable for lower-frequency applications where recovery speed is not a limiting factor.

Q: Can I use MURS360S-E3/5BT (1.5 A rated) in place of RS3JB-13 (3 A rated)?

A: MURS360S-E3/5BT is suitable only if circuit design permits operation at 50% of the original current capacity. The part maintains 600 V reverse voltage and fast recovery characteristics but is rated for maximum 1.5 A average rectified current. Using this part in a circuit designed for 3 A operation will result in diode overstress and potential failure.

Q: Are all substitute parts compatible with the same PCB footprint?

A: Yes. All substitute parts listed are packaged in DO-214AA SMB format, which is a standardized surface mount package. PCB footprints designed for DO-214AA SMB are compatible with all listed alternatives without modification.

Q: What is the significance of RoHS compliance for component selection?

A: RoHS (Restriction of Hazardous Substances) compliance indicates that a component meets regulatory requirements restricting the use of specific hazardous materials. ROHS3 compliant parts are required for many applications, particularly in consumer electronics and regulated industries. The original RS3JB-13 is RoHS non-compliant, making ROHS3 compliant alternatives necessary for new designs subject to RoHS requirements.

Q: How does reverse leakage current affect circuit performance?

A: Reverse leakage current (Ir) is the small current that flows through a reverse-biased diode. Lower reverse leakage current reduces power dissipation and improves circuit efficiency, particularly in high-impedance applications. MURS360BT3G exhibits 3 µA reverse leakage compared to 5 µA for RS3JB-13, representing a 40% reduction.

Q: What is the operating temperature range consideration for substitution?

A: The original RS3JB-13 operates from -65°C to 150°C junction temperature. Most substitute parts extend this range to -65°C to 175°C or -40°C to 175°C, providing improved thermal margin. Extended operating temperature ranges are beneficial for applications subject to extreme environmental conditions but do not restrict substitution in designs operating within the original temperature range.

Q: Can I use multiple lower-rated diodes in parallel to replace a single 3 A diode?

A: Parallel connection of diodes for current sharing is not recommended without additional circuit design considerations. Diodes exhibit positive temperature coefficients for forward voltage, which can lead to unequal current distribution and thermal runaway in parallel configurations. Direct substitution with a single diode rated for the required current is the preferred approach.

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