IRF9389PBF Equivalent & Substitute Parts

Part Overview

The IRF9389PBF is a dual N-channel and P-channel MOSFET array manufactured by Infineon Technologies, designed for surface mount applications requiring 30V operation with integrated logic-level gate control. This device integrates complementary channel configuration in an 8-SOIC package, enabling efficient switching and signal control in compact layouts.

The IRF9389PBF is currently discontinued at DiGi Electronics. Equivalent substitute parts are available from active manufacturers including Alpha & Omega Semiconductor Inc. and Diodes Incorporated, offering comparable electrical performance and mechanical compatibility for direct board-level replacement.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C - N-Channel	6.8	A
Continuous Drain Current (Id) @ 25°C - P-Channel	4.6	A
On-Resistance (Rds On Max) @ Id, Vgs	27 mOhm @ 6.8A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	2.3	V @ 10µA
Gate Charge (Qg Max) @ Vgs	14	nC @ 10V
Input Capacitance (Ciss Max) @ Vds	398	pF @ 15V
Maximum Power Dissipation	2	W
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	8-SOIC (0.154", 3.90mm Width)	Surface Mount
Configuration	N and P-Channel	Dual Array
Technology	MOSFET (Metal Oxide)	Logic Level Gate
RoHS Status	ROHS3 Compliant	Yes
Moisture Sensitivity Level (MSL)	1 (Unlimited)	MSL

Substitute Part Grouping Explanation

Substitution eligibility for the IRF9389PBF is determined by the following critical parameters:

Mandatory Compatibility Criteria:

Drain to Source Voltage (Vdss): 30V minimum
Package Type: 8-SOIC (0.154", 3.90mm Width) surface mount
Configuration: N and P-Channel dual array
Technology: MOSFET with logic-level gate control
Operating Temperature Range: -55°C to 150°C (TJ)
RoHS3 Compliance and MSL Level 1

Performance Parameters for Functional Equivalence:

Continuous Drain Current (Id): N-Channel ≥ 6.5A, P-Channel ≥ 4.2A
On-Resistance (Rds On): ≤ 30 mOhm @ 10V gate drive
Gate Charge (Qg): ≤ 15 nC @ 10V
Input Capacitance (Ciss): ≤ 650 pF @ 15V

All three substitute parts meet these criteria and are qualified for direct replacement in applications where the IRF9389PBF was originally specified.

Parameter Comparison

Parameter	IRF9389PBF (Main)	AO4629	DMC3025LSD-13	DMC3028LSDX-13
Manufacturer	Infineon Technologies	Alpha & Omega Semiconductor Inc.	Diodes Incorporated	Diodes Incorporated
Vdss (V)	30	30	30	30
Id N-Channel (A) @ 25°C	6.8	6.0	6.5	5.5
Id P-Channel (A) @ 25°C	4.6	5.5	4.2	5.8
Rds On (mOhm) @ 10V	27 @ 6.8A	30 @ 6A	20 @ 7.4A	27 @ 6A
Vgs(th) (V) @ Id	2.3 @ 10µA	2.4 @ 250µA	2.0 @ 250µA	3.0 @ 250µA
Qg (nC) @ 10V	14	6.3	9.8	13.2
Ciss (pF) @ 15V	398	310	501	641
Power Max (W)	2	2	1.2	1.2
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	8-SOIC	8-SOIC	8-SOIC	8-SOIC
Product Status	Discontinued	Active	Active	Active
RoHS3 Compliant	Yes	Yes	Yes	Yes
MSL Level	1	1	1	1

Engineering Selection Recommendations

AO4629 (Alpha & Omega Semiconductor Inc.)

The AO4629 is an active product with full RoHS3 compliance and MSL Level 1 rating. It provides equivalent 30V Vdss operation in an identical 8-SOIC package. The N-channel current rating of 6.0A is slightly lower than the IRF9389PBF (6.8A), while the P-channel current of 5.5A exceeds the original specification (4.6A). On-resistance of 30 mOhm @ 6A, 10V is within acceptable tolerance. Gate charge of 6.3 nC is significantly lower, reducing switching losses. This part is suitable for applications where P-channel performance is prioritized or where reduced gate charge is beneficial.

DMC3025LSD-13 (Diodes Incorporated)

The DMC3025LSD-13 is an active product with full RoHS3 compliance and MSL Level 1 rating. It maintains 30V Vdss in the standard 8-SOIC package. N-channel current of 6.5A closely matches the original specification, while P-channel current of 4.2A is slightly lower than the IRF9389PBF (4.6A). On-resistance of 20 mOhm @ 7.4A, 10V provides superior performance. Gate charge of 9.8 nC and input capacitance of 501 pF are within acceptable ranges. Maximum power dissipation is rated at 1.2W, lower than the original 2W specification. This part is suitable for applications prioritizing N-channel performance and lower on-resistance.

DMC3028LSDX-13 (Diodes Incorporated)

The DMC3028LSDX-13 is an active product with full RoHS3 compliance and MSL Level 1 rating. It provides 30V Vdss operation in the standard 8-SOIC package. N-channel current of 5.5A is lower than the original specification, while P-channel current of 5.8A significantly exceeds the IRF9389PBF (4.6A). On-resistance of 27 mOhm @ 6A, 10V matches the original specification. Gate charge of 13.2 nC is comparable to the original. Input capacitance of 641 pF is elevated. Maximum power dissipation is rated at 1.2W. This part is suitable for applications requiring balanced or P-channel-dominant performance.

All three substitute parts are currently in active production status with confirmed inventory availability, ensuring supply chain continuity for new designs and production requirements.

Frequently Asked Questions (FAQ)

Q: Can the AO4629 directly replace the IRF9389PBF on existing PCBs?

A: Yes. The AO4629 is pin-compatible and housed in the identical 8-SOIC package with 0.154" (3.90mm) width. Electrical parameters are within acceptable substitution ranges for the specified 30V, dual N/P-channel MOSFET array application. No PCB layout modifications are required.

Q: What is the primary difference between the three substitute options?

A: The AO4629 emphasizes reduced gate charge (6.3 nC) and balanced channel performance. The DMC3025LSD-13 prioritizes N-channel performance with the lowest on-resistance (20 mOhm). The DMC3028LSDX-13 offers the highest P-channel current (5.8A) with balanced on-resistance. Selection depends on whether the application is N-channel, P-channel, or performance-balanced dominant.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All three substitute parts—AO4629, DMC3025LSD-13, and DMC3028LSDX-13—carry full RoHS3 compliance certification and MSL Level 1 (Unlimited) moisture sensitivity rating, matching the original IRF9389PBF specifications.

Q: What is the impact of the lower maximum power rating on DMC3025LSD-13 and DMC3028LSDX-13?

A: The DMC3025LSD-13 and DMC3028LSDX-13 are rated at 1.2W maximum power dissipation compared to the IRF9389PBF's 2W rating. This reflects thermal management differences in the die design. Applications must verify that actual power dissipation remains within the 1.2W limit. Lower on-resistance in the DMC3025LSD-13 (20 mOhm) may offset this limitation through reduced I²R losses.

Q: Which substitute part has the lowest gate charge?

A: The AO4629 has the lowest gate charge at 6.3 nC @ 10V, compared to 14 nC for the IRF9389PBF. This reduces switching losses and improves high-frequency performance in gate-drive-limited applications.

Q: Are there any differences in threshold voltage specifications?

A: Yes. The IRF9389PBF specifies Vgs(th) at 2.3V @ 10µA, while all three substitutes specify Vgs(th) at 250µA. The AO4629 and DMC3025LSD-13 are rated at 2.4V and 2.0V respectively, while the DMC3028LSDX-13 is rated at 3.0V. These differences reflect different measurement conditions and do not affect logic-level gate drive compatibility in standard applications.

Q: Can I use these parts interchangeably in the same design?

A: No. While all three parts are mechanically and electrically compatible for direct PCB replacement, they have different electrical characteristics. Select the part that best matches your application's specific requirements for N-channel current, P-channel current, on-resistance, or gate charge performance. Verify thermal and electrical performance through simulation or testing before production deployment.

Q: What is the inventory status of these substitute parts?

A: AO4629 has 15,400 pieces in stock. DMC3025LSD-13 has 40,300 pieces in stock. DMC3028LSDX-13 has 55,200 pieces in stock. All parts are available as new original components in active production.

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