Counterfeit and defect prevention
Visual and packaging inspection
Electrical performance verification
Service Email:
[email protected]
>
DMC3025LSD-13
Diodes Incorporated
MOSFET N/P-CH 30V 6.5A/4.2A 8SO
40388 Pcs New Original In Stock
Mosfet Array 30V 6.5A, 4.2A 1.2W Surface Mount 8-SO
Request Quote
(Ships tomorrow)
*Quantity
Minimum 1
Minimum 1
5.0 / 5.0
- (383 Ratings)
DMC3025LSD-13
Product Overview
12888415
DiGi Electronics Part Number
DMC3025LSD-13-DGManufacturer
Diodes Incorporated
DMC3025LSD-13
Description
MOSFET N/P-CH 30V 6.5A/4.2A 8SOInventory
40388 Pcs New Original In Stock
Mosfet Array 30V 6.5A, 4.2A 1.2W Surface Mount 8-SO
Quantity
Minimum 1
Minimum 1
Purchase and inquiry
Warranty & Returns
How to Order
Shipping & Delivery
Quality Assurance
365 - Day Quality Guarantee - Every part fully backed.
90 - Day Refund or Exchange - Defective parts? No hassle.
Limited Stock, Order Now - Get reliable parts without worry.
Global Shipping & Secure Packaging
Worldwide Delivery in 3-5 Business Days
100% ESD Anti-Static Packaging
Real-Time Tracking for Every Order
Secure & Flexible Payment
Credit Card, VISA, MasterCard, PayPal, Western Union, Telegraphic Transfer(T/T) and more
All payments encrypted for security
DMC3025LSD-13 Technical Specifications
Category
Transistors, FETs, MOSFETs, FET, MOSFET Arrays
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
6.5A, 4.2A
Rds On (Max) @ Id, Vgs
20mOhm @ 7.4A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
9.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
501pF @ 15V
Power - Max
1.2W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO
Base Product Number
DMC3025
Datasheet & Documents
HTML Datasheet
DMC3025LSD-13-DG
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Additional Information
Other Names
DMC3025LSD-13DIDKR
DMC3025LSD-13DITR
DMC3025LSD-13DICT
DMC3025LSD13
Standard Package
2,500
Alternative Parts
PART NUMBER
MANUFACTURER
QUANTITY AVAILABLE
DiGi PART NUMBER
UNIT PRICE
SUBSTITUTE TYPE
Reviews
5.0/5.0-(Show up to 5 Ratings)
December 02, 2025
포장과 배송이 모두 친환경적이어서 지속 가능한 소비를 실천하는 느낌이에요. 매우 만족합니다.
December 02, 2025
Ils offrent un excellent service client à des prix très raisonnables.
December 02, 2025
DiGi Electronics’s fast shipping ensures my supplies arrive right when I need them.
December 02, 2025
Their prompt response and support after purchase have always exceeded expectations.
December 02, 2025
Reliable service and uniform product quality keep me coming back.
Publish Evalution
Evalution Message
Please enter your review message.
Please post honest comments and do not post ilegal comments.
Frequently Asked Questions (FAQ)
Can the DMC3025LSD-13 be used for bidirectional load switching in a 24V automotive system, and what design considerations should I account for to avoid overheating or shoot-through currents?
Yes, the DMC3025LSD-13 can be used for bidirectional load switching in a 24V automotive system due to its 30V Vdss rating for both N and P-channel MOSFETs. However, careful gate drive timing is essential to prevent shoot-through during transitions. Since the DMC3025LSD-13 integrates both FETs in a half-bridge configuration, ensure a dead-time circuit or controller is used. Additionally, at high ambient temperatures (common in automotive), verify thermal performance: with a 1.2W power dissipation limit and RθJA of ~100°C/W for 8-SO, a PCB with sufficient copper area is required to manage junction temperature within the -55°C to 150°C range. Use low-side and high-side gate drivers with sufficient sink/source current to minimize switching losses given the 9.8nC gate charge.
When replacing the DMP2008UFG-7 with the DMC3025LSD-13 in a power rail switching application, what are the key differences in on-resistance and thermal performance I should evaluate?
The DMC3025LSD-13 offers a lower Rds(on) of 20mΩ @ 10V compared to the DMP2008UFG-7’s 25mΩ, improving conduction efficiency in both high- and low-side positions. However, the DMC3025LSD-13 has higher total gate charge (9.8nC vs. ~5nC), increasing switching losses in PWM applications. Also, the DMC3025LSD-13 is in an 8-SO package with higher thermal resistance than the DMP2008UFG-7’s DFN package. If replacing in a thermally constrained design, ensure adequate copper pour or consider forced cooling. Confirm the logic-level gate compatibility (2V Vgs(th) max) matches your drive signal, as the DMC3025LSD-13 is optimized for 3.3V or 5V logic.
How does the DMC3025LSD-13 perform in battery-powered IoT devices with a 3.3V microcontroller, and is the gate threshold voltage reliable across temperature extremes?
The DMC3025LSD-13 is well-suited for 3.3V microcontroller-driven IoT applications due to its logic-level gate feature and Vgs(th) of only 2V max at 250µA, ensuring turn-on with 3.3V drive. However, in battery-operated systems where voltage may sag below 3V, verify that the N and P-channel FETs still fully enhance—check the Rds(on) vs. Vgs curve at low voltages. Over the full -55°C to 150°C operating range, threshold voltage decreases at low temperatures and increases at high temperatures, which could affect turn-on timing. Use a dedicated gate driver or buffer if the MCU output drive strength is marginal to ensure fast switching and reduce cross-conduction risk.
What are the PCB layout best practices for the DMC3025LSD-13 to minimize thermal stress and ensure long-term reliability in high-cycle switching applications?
For the DMC3025LSD-13, use a thermal pad connected to a large ground plane via multiple vias to improve heat dissipation and stay within the 1.2W power limit. Route gate traces as short as possible to reduce parasitic inductance and prevent ringing, especially given the 501pF input capacitance. Use Kelvin-source connections if precision current sensing is involved. To prevent electromigration in high-cycle switching, keep drain and source loops symmetrical and minimize current crowding. Ensure the 8-SO package’s lead coplanarity is considered during reflow—MSL1 rating simplifies handling, but maintain proper solder profile to avoid thermal shock. Avoid placing temperature-sensitive components near the DMC3025LSD-13 due to localized heating.
Is the DMC3025LSD-13 a suitable drop-in replacement for the FDN340P and FDN360P in dual MOSFET H-bridge motor control, and what integration risks should I anticipate?
The DMC3025LSD-13 can replace FDN340P and FDN360P in low-power H-bridge motor control (e.g., small DC motors up to 24V), but it is not a direct functional replacement since the DMC3025LSD-13 integrates both N and P channels in one package, while FDN340P/FDN360P are single-channel. You’ll need two DMC3025LSD-13 devices for a full H-bridge, increasing board space. However, the lower Rds(on) and matched thermal characteristics offer better balance. Key risks include improper gate drive voltage sequencing—ensure both N and P channels are not turned on simultaneously. Also, verify dead-time in firmware or external logic, as the 9.8nC gate charge demands faster drivers than typical for FDN series. Monitor junction temperature under load, especially in enclosed enclosures.
Quality Assurance (QC)
DiGi ensures the quality and authenticity of every electronic component through professional inspections and batch sampling, guaranteeing reliable sourcing, stable performance, and compliance with technical specifications, helping customers reduce supply chain risks and confidently use components in production.
DMC3025LSD-13 CAD Models
Diodes Incorporated DMC3025LSD-13 PCB symbols & footprints
productDetail
