HS3J R7G Equivalent & Substitute Parts

Part Overview

The HS3J R7G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 600 V DC reverse voltage and 3 A average rectified current in a surface mount DO-214AB (SMC) package. This component is classified as discontinued at DiGi Electronics, necessitating identification of equivalent and substitute parts for ongoing design requirements and production needs. The diode features fast recovery characteristics with a reverse recovery time of 75 ns and operates across a junction temperature range of -55°C to 150°C. Equivalent and substitute parts are identified based on matching electrical specifications, package compatibility, and compliance certifications.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	600	V
Current - Average Rectified (Io)	3	A
Voltage - Forward (Vf) (Max) @ If	1.7 @ 3 A	V
Speed Classification	Fast Recovery ≤ 500ns, > 200mA (Io)	—
Reverse Recovery Time (trr)	75	ns
Current - Reverse Leakage @ Vr	10	µA @ 600 V
Mounting Type	Surface Mount	—
Package / Case	DO-214AB, SMC	—
Operating Temperature - Junction	-55 to 150	°C
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitute parts for the HS3J R7G are classified into two categories based on electrical and mechanical compatibility:

Parametric Equivalents share identical electrical specifications across all critical parameters: 600 V reverse voltage, 3 A average rectified current, 1.7 V forward voltage at 3 A, fast recovery speed classification, and surface mount DO-214AB (SMC) packaging. These parts differ only in packaging format (Cut Tape vs. Tape & Reel) or minor variations in reverse recovery time and capacitance that remain within acceptable operating ranges.

Similar Parts maintain the same voltage and current ratings, package type, and mounting technology but may exhibit variations in forward voltage characteristics, reverse recovery time, reverse leakage current, or operating temperature range. These parts are suitable for applications where the primary electrical requirements (voltage and current handling) are the determining factors.

Key Parameters for Substitution:

Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 3 A
Package / Case: DO-214AB, SMC (or compatible surface mount package)
Mounting Type: Surface Mount
Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)
RoHS Status: ROHS3 Compliant

Parameter Comparison

Manufacturer Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ If [V]	Speed	trr [ns]	Ir @ Vr [µA]	Package	Temp Range [°C]	Product Status
HS3J R7G	Taiwan Semiconductor Corporation	600	3	1.7 @ 3 A	Fast Recovery ≤ 500ns	75	10 @ 600 V	DO-214AB, SMC	-55 to 150	Discontinued
ES3J V7G	Taiwan Semiconductor Corporation	600	3	1.7 @ 3 A	Fast Recovery ≤ 500ns	35	10 @ 600 V	DO-214AB, SMC	-55 to 150	Discontinued
HS3J-K M6G	Taiwan Semiconductor Corporation	600	3	1.7 @ 3 A	Fast Recovery ≤ 500ns	75	10 @ 600 V	DO-214AB, SMC	-55 to 150	Active
CURC305-G	Comchip Technology	600	3	1.7 @ 3 A	Fast Recovery ≤ 500ns	75	5 @ 600 V	DO-214AB, SMC	-55 to 150	Active
ER3J-TP	Micro Commercial Co	600	3	1.7 @ 3 A	Fast Recovery ≤ 500ns	35	5 @ 600 V	DO-214AB, SMC	-50 to 175	Active
MURS360-E3/57T	Vishay General Semiconductor - Diodes Division	600	3	1.28 @ 3 A	Fast Recovery ≤ 500ns	75	10 @ 600 V	DO-214AB, SMC	-65 to 175	Active
MURS360-E3/9AT	Vishay General Semiconductor - Diodes Division	600	3	1.28 @ 3 A	Fast Recovery ≤ 500ns	75	10 @ 600 V	DO-214AB, SMC	-65 to 175	Active
MURS360T3G	onsemi	600	3	1.25 @ 3 A	Fast Recovery ≤ 500ns	75	10 @ 600 V	DO-214AB, SMC	-65 to 175	Active
RS3J-13-F	Diodes Incorporated	600	3	1.3 @ 3 A	Fast Recovery ≤ 500ns	250	5 @ 600 V	DO-214AB, SMC	-65 to 150	Active
RS3JB-13-F	Diodes Incorporated	600	3	1.3 @ 3 A	Fast Recovery ≤ 500ns	250	5 @ 600 V	DO-214AA, SMB	-65 to 150	Active
CGRC505-G	Comchip Technology	600	5	1.15 @ 5 A	Standard Recovery >500ns	—	10 @ 600 V	DO-214AB, SMC	-55 to 150	Active

Engineering Selection Recommendations

Primary Equivalent (Active Status): HS3J-K M6G is the recommended direct substitute for HS3J R7G. Both parts are manufactured by Taiwan Semiconductor Corporation and share identical electrical specifications: 600 V reverse voltage, 3 A average rectified current, 1.7 V forward voltage at 3 A, 75 ns reverse recovery time, and -55°C to 150°C operating temperature range. The HS3J-K M6G maintains active product status and is available in Tape & Reel packaging format. This part provides seamless functional replacement with no design modifications required.

Secondary Equivalents (Active Status): ES3J V7G, CURC305-G, and ER3J-TP are parametric equivalents meeting all critical electrical requirements. ES3J V7G offers improved reverse recovery time (35 ns vs. 75 ns) while maintaining identical voltage, current, and temperature specifications. CURC305-G and ER3J-TP provide equivalent performance with lower reverse leakage current (5 µA vs. 10 µA). All three parts are ROHS3 compliant and MSL 1 rated.

Alternative Suppliers (Active Status): MURS360T3G (onsemi), MURS360-E3/57T and MURS360-E3/9AT (Vishay), and RS3J-13-F (Diodes Incorporated) are functionally compatible alternatives. These parts maintain 600 V reverse voltage and 3 A current ratings with fast recovery characteristics. Forward voltage varies between 1.25 V and 1.3 V at 3 A, and operating temperature ranges extend to -65°C to 175°C. All parts are ROHS3 compliant and MSL 1 rated.

Package Consideration: RS3JB-13-F uses DO-214AA (SMB) package instead of DO-214AB (SMC). This part is suitable only for applications where SMB package footprint is acceptable and PCB layout permits the larger package dimensions.

Higher Current Alternative: CGRC505-G is rated for 5 A average rectified current at 600 V reverse voltage. This part is suitable for applications requiring higher current capacity but operates with standard recovery speed (>500ns) rather than fast recovery. Selection of this part should be based on specific application current requirements and switching frequency considerations.

Frequently Asked Questions (FAQ)

Q: Can HS3J-K M6G directly replace HS3J R7G without circuit modifications?

A: Yes. HS3J-K M6G is a parametric equivalent with identical electrical specifications: 600 V reverse voltage, 3 A average rectified current, 1.7 V forward voltage at 3 A, 75 ns reverse recovery time, and -55°C to 150°C operating temperature. The only difference is packaging format (Tape & Reel vs. Cut Tape). No circuit modifications are required.

Q: What is the difference between fast recovery and standard recovery diodes?

A: Fast recovery diodes have reverse recovery time ≤ 500 ns and are suitable for high-frequency switching applications. Standard recovery diodes have reverse recovery time > 500 ns and are used in lower-frequency applications. HS3J R7G is a fast recovery diode with 75 ns reverse recovery time. CGRC505-G is a standard recovery diode and should not be used as a substitute in high-frequency circuits.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All equivalent and substitute parts listed are ROHS3 compliant and REACH unaffected, meeting environmental and regulatory requirements for electronic component manufacturing and use.

Q: What does MSL 1 (Unlimited) moisture sensitivity level mean?

A: MSL 1 indicates the component has unlimited shelf life and requires no special moisture control during storage or handling. All listed parts carry MSL 1 rating, eliminating moisture-related reliability concerns.

Q: Can RS3JB-13-F be used as a substitute despite different package type?

A: RS3JB-13-F uses DO-214AA (SMB) package instead of DO-214AB (SMC). While electrical specifications are compatible, the larger SMB footprint requires different PCB layout and assembly considerations. This part is suitable only if the application PCB design accommodates SMB package dimensions.

Q: Which substitute offers the lowest forward voltage drop?

A: MURS360T3G (onsemi) offers the lowest forward voltage at 1.25 V @ 3 A, compared to 1.7 V for HS3J R7G. This results in lower power dissipation in applications with continuous current flow. However, forward voltage difference of 0.45 V is application-dependent and should be evaluated against thermal and efficiency requirements.

Q: What is the advantage of ES3J V7G over HS3J R7G?

A: ES3J V7G provides improved reverse recovery time of 35 ns compared to 75 ns for HS3J R7G. This faster recovery characteristic reduces switching losses in high-frequency applications. All other electrical specifications remain identical. ES3J V7G is suitable for applications prioritizing reduced switching losses.

Q: Are there inventory considerations when selecting a substitute?

A: Yes. HS3J R7G is discontinued at DiGi Electronics with 1,098 pieces in stock. HS3J-K M6G (active status) has 761 pieces available. MURS360T3G (onsemi) has the highest inventory at 105,100 pieces. For long-term production requirements, parts with active product status and higher inventory levels provide supply chain stability.

Q: What operating temperature range should be considered for substitute selection?

A: HS3J R7G operates from -55°C to 150°C. Most active substitutes (MURS360 series, RS3J series, ER3J-TP) extend the upper temperature limit to 175°C, providing additional thermal margin. CGRC505-G specifies 150°C maximum. Application-specific temperature requirements should determine whether extended temperature range is necessary.

Q: Can CURC305-G be used in place of HS3J R7G?

A: Yes. CURC305-G is a parametric equivalent with identical 600 V reverse voltage, 3 A average rectified current, 1.7 V forward voltage at 3 A, and 75 ns reverse recovery time. The only difference is lower reverse leakage current (5 µA vs. 10 µA), which is advantageous. CURC305-G is active status with 1,114 pieces in inventory.

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