HS3J M6G Equivalent & Substitute Parts

Part Overview

The HS3J M6G is a general-purpose rectifier diode rated for 600 V DC reverse voltage and 3 A average rectified current in a surface mount DO-214AB (SMC) package. Manufactured by Taiwan Semiconductor Corporation, this component is classified as discontinued at DiGi Electronics, necessitating identification of equivalent and substitute parts for ongoing design requirements and production continuity.

Key Parameters

Parameter	Value
Voltage - DC Reverse (Vr) (Max)	600 V
Current - Average Rectified (Io)	3 A
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 3 A
Speed Classification	Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	75 ns
Current - Reverse Leakage @ Vr	10 µA @ 600 V
Package / Case	DO-214AB, SMC
Mounting Type	Surface Mount
Operating Temperature - Junction	-55°C ~ 150°C
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the HS3J M6G is determined by strict adherence to the following electrical and mechanical parameters:

Critical Parameters for Direct Substitution:

Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 3 A
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)

Parametric Equivalents maintain all critical electrical specifications and package requirements, differing only in secondary characteristics such as reverse recovery time, forward voltage, or capacitance values that remain within acceptable operating ranges.

Similar Parts share the same voltage and current ratings with identical package specifications but may differ in speed classification, forward voltage characteristics, or reverse leakage current. These parts are suitable for applications where the primary electrical requirements are met, though circuit performance characteristics may vary.

Parameter Comparison

Manufacturer Part Number	Manufacturer	Vr (Max)	Io	Vf (Max) @ If	Speed	trr (ns)	Ir @ Vr	Package	Product Status
HS3J M6G	Taiwan Semiconductor Corporation	600 V	3 A	1.7 V @ 3 A	Fast Recovery ≤ 500ns	75 ns	10 µA @ 600 V	DO-214AB, SMC	Discontinued
ES3J V7G	Taiwan Semiconductor Corporation	600 V	3 A	1.7 V @ 3 A	Fast Recovery ≤ 500ns	35 ns	10 µA @ 600 V	DO-214AB, SMC	Discontinued
HS3J-K M6G	Taiwan Semiconductor Corporation	600 V	3 A	1.7 V @ 3 A	Fast Recovery ≤ 500ns	75 ns	10 µA @ 600 V	DO-214AB, SMC	Active
CURC305-G	Comchip Technology	600 V	3 A	1.7 V @ 3 A	Fast Recovery ≤ 500ns	75 ns	5 µA @ 600 V	DO-214AB, SMC	Active
ER3J-TP	Micro Commercial Co	600 V	3 A	1.7 V @ 3 A	Fast Recovery ≤ 500ns	35 ns	5 µA @ 600 V	DO-214AB, SMC	Active
MURS360-E3/57T	Vishay General Semiconductor - Diodes Division	600 V	3 A	1.28 V @ 3 A	Fast Recovery ≤ 500ns	75 ns	10 µA @ 600 V	DO-214AB, SMC	Active
MURS360-E3/9AT	Vishay General Semiconductor - Diodes Division	600 V	3 A	1.28 V @ 3 A	Fast Recovery ≤ 500ns	75 ns	10 µA @ 600 V	DO-214AB, SMC	Active
MURS360T3G	onsemi	600 V	3 A	1.25 V @ 3 A	Fast Recovery ≤ 500ns	75 ns	10 µA @ 600 V	DO-214AB, SMC	Active
RS3J-13-F	Diodes Incorporated	600 V	3 A	1.3 V @ 3 A	Fast Recovery ≤ 500ns	250 ns	5 µA @ 600 V	DO-214AB, SMC	Active
RS3JB-13-F	Diodes Incorporated	600 V	3 A	1.3 V @ 3 A	Fast Recovery ≤ 500ns	250 ns	5 µA @ 600 V	DO-214AA, SMB	Active
CGRC505-G	Comchip Technology	600 V	5 A	1.15 V @ 5 A	Standard Recovery >500ns	—	10 µA @ 600 V	DO-214AB, SMC	Active

Engineering Selection Recommendations

Parametric Equivalents (Recommended for Direct Replacement):

The HS3J-K M6G represents the primary parametric equivalent, maintaining identical electrical specifications and package configuration while offering active product status. This part is manufactured by the same supplier (Taiwan Semiconductor Corporation) and is suitable for direct substitution in existing designs without circuit modification.

The ES3J V7G provides parametric equivalence with improved reverse recovery time (35 ns versus 75 ns), resulting in reduced switching losses. Although discontinued at DiGi Electronics, this part remains available through inventory channels and is suitable for applications where faster recovery characteristics are beneficial.

Active Substitute Parts (Recommended for New Designs):

The following parts are classified as active products and meet all critical electrical and mechanical requirements:

CURC305-G (Comchip Technology): Identical electrical specifications with reduced reverse leakage current (5 µA versus 10 µA), offering improved leakage performance.
ER3J-TP (Micro Commercial Co): Meets all specifications with improved reverse recovery time (35 ns) and reduced reverse leakage current (5 µA), with extended operating temperature range (-50°C ~ 175°C).
MURS360-E3/57T, MURS360-E3/9AT, MURS360T3G (Vishay and onsemi): All three variants meet critical specifications with lower forward voltage characteristics (1.25 V to 1.28 V @ 3 A), resulting in reduced power dissipation. MURS360T3G offers the highest inventory availability (105,100 pcs).
RS3J-13-F (Diodes Incorporated): Meets specifications with reduced reverse leakage current (5 µA) and lower forward voltage (1.3 V @ 3 A). Note: Reverse recovery time is 250 ns, exceeding the fast recovery classification threshold.

Package Consideration:

RS3JB-13-F uses DO-214AA (SMB) package instead of DO-214AB (SMC). This part is suitable only for applications where SMB package footprint compatibility exists.

Higher Current Rating:

CGRC505-G is rated for 5 A average rectified current with 600 V reverse voltage. This part is suitable for applications requiring higher current capacity but operates with standard recovery speed (>500ns) rather than fast recovery characteristics.

Frequently Asked Questions (FAQ)

Q: Can the HS3J M6G be directly replaced with any of the listed substitute parts?

A: Direct replacement is possible with parts maintaining identical voltage (600 V), current (3 A), and package (DO-214AB, SMC) specifications. The HS3J-K M6G is the primary direct replacement. Other parts with these specifications are functionally compatible, though secondary characteristics such as forward voltage and reverse recovery time may differ.

Q: What is the significance of reverse recovery time (trr) differences?

A: Reverse recovery time affects switching speed and power dissipation in high-frequency applications. The HS3J M6G specifies 75 ns. Parts with lower trr values (such as ES3J V7G at 35 ns) exhibit faster switching characteristics and reduced switching losses. Parts with higher trr values (such as RS3J-13-F at 250 ns) are suitable for lower-frequency applications but may generate additional heat in high-frequency circuits.

Q: Are forward voltage differences significant?

A: Forward voltage variations (ranging from 1.25 V to 1.7 V @ 3 A across the listed parts) affect power dissipation and circuit efficiency. Lower forward voltage results in reduced heat generation. Selection depends on circuit thermal requirements and efficiency specifications.

Q: Can RS3JB-13-F be used as a substitute despite its different package?

A: RS3JB-13-F uses DO-214AA (SMB) package instead of DO-214AB (SMC). Substitution is possible only if the PCB layout and assembly equipment support SMB package footprint. Direct board-level replacement without layout modification is not possible.

Q: Is CGRC505-G suitable for applications designed for the HS3J M6G?

A: CGRC505-G is rated for 5 A average rectified current, exceeding the 3 A requirement of the HS3J M6G. While the higher current rating provides design margin, the part operates with standard recovery speed (>500ns) rather than fast recovery characteristics. This part is suitable for applications where current capacity is a limiting factor and switching speed is not critical.

Q: What compliance certifications apply to all substitute parts?

A: All listed parts are ROHS3 compliant, REACH unaffected, and classified under ECCN EAR99. Moisture sensitivity level is 1 (unlimited) for all parts, indicating no special moisture handling requirements during storage or assembly.

Q: Which substitute part offers the best availability?

A: MURS360T3G (onsemi) offers the highest inventory availability at 105,100 pieces, followed by MURS360-E3/57T (Vishay) at 18,300 pieces. Both parts meet all critical specifications and are actively produced.

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