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FDS8958B MOSFET N/P-Channel 30V 6.4A Equivalent & Substitute Parts
Part Overview
The FDS8958B is an N and P-Channel complementary MOSFET array manufactured by onsemi, designed for surface mount applications in 8-SOIC packaging. This device integrates dual channel functionality with logic level gate drive capability, operating at 30V drain-source voltage with continuous drain currents of 6.4A (N-channel) and 4.5A (P-channel). The FDS8958B carries Last Time Buy status, indicating discontinued production. Equivalent and substitute parts are necessary to maintain design continuity and ensure component availability for new production runs and field replacements.
Substiute Parts
Key Parameters
| Parameter | FDS8958B Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 30 | V |
| Continuous Drain Current (Id) @ 25°C | 6.4A, 4.5A | A |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 6.4A, 10V | mOhm |
| Vgs(th) (Max) @ Id | 3V @ 250µA | V |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V | nC |
| Input Capacitance (Ciss) (Max) @ Vds | 540pF @ 15V | pF |
| Power - Max | 900 | mW |
| Operating Temperature Range | -55 to 150 | °C |
| Configuration | N and P-Channel | — |
| FET Feature | Logic Level Gate | — |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | — |
| Mounting Type | Surface Mount | — |
| RoHS Status | ROHS3 Compliant | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | — |
Substitute Part Grouping Explanation
Substitution of the FDS8958B is determined by strict electrical and mechanical compatibility across the following critical parameters:
Electrical Compatibility Criteria:
- Drain to Source Voltage (Vdss): Must equal or exceed 30V
- Continuous Drain Current (Id): Must support or exceed 6.4A (N-channel) and 4.5A (P-channel) ratings
- Configuration: Must be N and P-Channel complementary array
- FET Feature: Logic Level Gate operation required
- Operating Temperature Range: Must span -55°C to 150°C minimum
- Gate Charge (Qg): Lower values indicate faster switching; values within 7.8nC to 14nC are acceptable
- Rds On: Lower on-resistance improves efficiency; values between 20mOhm and 30mOhm are functionally equivalent
Mechanical Compatibility Criteria:
- Package / Case: 8-SOIC (0.154", 3.90mm Width) form factor required for PCB layout compatibility
- Mounting Type: Surface Mount only
- Supplier Device Package: 8-SO or 8-SOP variants compatible with 8-SOIC footprint
Compliance Criteria:
- RoHS3 Compliant status required
- Moisture Sensitivity Level (MSL): 1 (Unlimited) required
- REACH Unaffected status required
All substitute parts listed meet these criteria and are functionally interchangeable with the FDS8958B in applications requiring N/P-channel MOSFET array functionality at 30V operation.
Parameter Comparison
| Parameter | FDS8958B (onsemi) | DMC3025LSD-13 (Diodes) | DMC3028LSD-13 (Diodes) | DMC3028LSDX-13 (Diodes) | IRF9389TRPBF (Infineon) | PJL9602_R2_00001 (Panjit) | SP8M10FRATB (Rohm) |
|---|---|---|---|---|---|---|---|
| Vdss (V) | 30 | 30 | 30 | 30 | 30 | 30 | 30 |
| Id @ 25°C (A) | 6.4, 4.5 | 6.5, 4.2 | 6.6, 6.8 | 5.5, 5.8 | 6.8, 4.6 | 6.1, 6.0 | 7.0, 4.5 |
| Rds On (mOhm) | 26 @ 6.4A, 10V | 20 @ 7.4A, 10V | 28 @ 6A, 10V | 27 @ 6A, 10V | 27 @ 6.8A, 10V | 28 @ 6A, 10V; 30 @ 4A, 10V | 25 @ 7A, 10V; 56 @ 4.5A, 10V |
| Vgs(th) (V) | 3 @ 250µA | 2 @ 250µA | 3 @ 250µA | 3 @ 250µA | 2.3 @ 10µA | 2.1 @ 250µA; 2.5 @ 250µA | 2.5 @ 1mA |
| Qg (nC) | 12 @ 10V | 9.8 @ 10V | 10.5 @ 10V | 13.2 @ 10V | 14 @ 10V | 7.8 @ 10V; 4.5 @ 5V | 8.4 @ 5V; 8.5 @ 5V |
| Ciss (pF) | 540 @ 15V | 501 @ 15V | 472 @ 15V | 641 @ 15V | 398 @ 15V | 343 @ 15V; 870 @ 15V | 600 @ 10V; 850 @ 10V |
| Power Max (W) | 0.9 | 1.2 | 1.8 | 1.2 | 2.0 | 1.7 | 2.0 |
| Operating Temp (°C) | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 |
| Configuration | N and P-Channel | N and P-Channel | N and P-Channel | N and P-Channel | N and P-Channel | N and P-Channel Complementary | N and P-Channel |
| Package | 8-SOIC | 8-SOIC | 8-SOIC | 8-SOIC | 8-SOIC | 8-SOIC | 8-SOIC |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| MSL | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) |
| Product Status | Last Time Buy | Active | Active | Active | Active | Active | Active |
Engineering Selection Recommendations
Primary Substitutes (Highest Compatibility):
The DMC3025LSD-13, DMC3028LSD-13, and IRF9389TRPBF represent the most direct functional equivalents to the FDS8958B. These devices maintain identical 30V Vdss rating, comparable drain current specifications, and equivalent on-resistance characteristics. All three are in Active product status, ensuring long-term availability and supply chain stability. The Diodes Incorporated DMC series (DMC3025LSD-13 and DMC3028LSD-13) offer superior on-resistance performance (20mOhm and 28mOhm respectively) compared to the FDS8958B baseline, providing improved efficiency in switching applications. The Infineon IRF9389TRPBF delivers higher power dissipation capability (2W versus 0.9W), making it suitable for applications requiring enhanced thermal performance.
Secondary Substitutes (Functional Equivalents with Trade-offs):
The DMC3028LSDX-13 operates within acceptable electrical parameters but exhibits higher input capacitance (641pF versus 540pF), resulting in increased gate charge requirements. The PJL9602_R2_00001 from Panjit International provides functional equivalence with lower gate charge (7.8nC) and reduced input capacitance (343pF), beneficial for high-frequency switching applications. The SP8M10FRATB from Rohm Semiconductor includes automotive-grade qualification (AEC-Q101) and 4V drive capability, suitable for automotive and industrial applications requiring enhanced reliability standards.
Compliance and Availability:
All substitute parts maintain ROHS3 compliance, MSL Level 1 (Unlimited) moisture sensitivity rating, and REACH Unaffected status, ensuring regulatory compatibility with the FDS8958B. Current inventory levels range from 2,247 to 55,200 units across substitute options, providing multiple sourcing pathways for production requirements.
Frequently Asked Questions (FAQ)
Q: Can the DMC3025LSD-13 directly replace the FDS8958B in existing PCB designs?
A: Yes. The DMC3025LSD-13 shares identical 8-SOIC package geometry, pinout compatibility, and electrical operating parameters (30V Vdss, comparable drain currents). No PCB layout modifications are required. The lower on-resistance (20mOhm) improves efficiency without affecting circuit functionality.
Q: What is the primary difference between DMC3028LSD-13 and DMC3028LSDX-13?
A: Both devices share the same base part number (DMC3028) and 30V rating. The DMC3028LSDX-13 exhibits higher input capacitance (641pF versus 472pF) and gate charge (13.2nC versus 10.5nC), resulting in slower switching characteristics. The DMC3028LSD-13 is preferred for applications requiring faster switching response.
Q: Is the IRF9389TRPBF suitable for high-power applications compared to the FDS8958B?
A: Yes. The IRF9389TRPBF provides double the maximum power dissipation (2W versus 0.9W) and maintains comparable on-resistance (27mOhm). This device is appropriate for applications with elevated thermal requirements or continuous high-current operation.
Q: Does the SP8M10FRATB automotive qualification affect its use in non-automotive applications?
A: No. Automotive-grade qualification (AEC-Q101) represents an additional reliability standard and does not restrict use in non-automotive designs. The SP8M10FRATB is fully compatible with standard industrial and consumer applications.
Q: What packaging options are available for these substitute parts?
A: All substitute parts are supplied in 8-SOIC surface mount packaging with identical 0.154" (3.90mm) width. Packaging variants include Cut Tape (CT) & Digi-Reel® and Tape & Reel (TR) options. Verify specific packaging requirements with your supplier before ordering.
Q: Are there electrical performance differences that would affect circuit design?
A: Electrical parameters remain within acceptable tolerance ranges for direct substitution. Gate charge variations (7.8nC to 14nC) may affect switching speed in high-frequency applications. On-resistance values (20mOhm to 30mOhm) are functionally equivalent. Input capacitance ranges (343pF to 870pF) may require gate drive circuit evaluation in applications operating above 1MHz switching frequency.
Q: Which substitute part offers the best thermal performance?
A: The IRF9389TRPBF and SP8M10FRATB both provide 2W maximum power dissipation, double that of the FDS8958B. The SP8M10FRATB includes automotive-grade thermal specifications. For applications requiring maximum thermal headroom, either device is recommended.
Q: Are all substitute parts RoHS3 compliant?
A: Yes. All listed substitute parts maintain ROHS3 Compliant status and REACH Unaffected regulatory classification, matching the FDS8958B compliance profile.
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