FDPF16N50 N-Channel 500V 16A MOSFET Equivalent & Substitute Parts

Part Overview

The FDPF16N50 is an N-Channel 500V 16A MOSFET manufactured by onsemi in the UniFET™ series, housed in a TO-220F-3 through-hole package. This device is rated for continuous drain current of 16A at 25°C with a maximum power dissipation of 38.5W and operates across a temperature range of -55°C to 150°C. The part is currently classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design support and production continuity.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	16	A
Rds On (Max) @ Id, Vgs	380 mOhm @ 8A, 10V	mOhm
Gate Charge (Qg) @ Vgs	45	nC @ 10V
Power Dissipation (Max)	38.5	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220F-3	Through Hole
Vgs (Max)	±30	V

Substitute Part Grouping Explanation

Substitution of the FDPF16N50 is determined by the following critical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): Minimum 500V required
Continuous Drain Current (Id): Minimum 16A at 25°C required
Package Type: TO-220-3 Full Pack (through-hole mounting)
Gate Drive Voltage: 10V nominal
Operating Temperature Range: -55°C to 150°C minimum

Secondary Compatibility Factors:

Rds On (Max): Lower or equal values preferred for thermal performance
Gate Charge (Qg): Lower values reduce switching losses
Power Dissipation: Equal or higher ratings accommodate thermal requirements
Vgs (Max): ±30V or greater for gate drive compatibility

Substitute parts are grouped into two categories:

Parametric Equivalent: FDPF16N50T matches all critical electrical and thermal specifications with identical package configuration.

Similar/Compatible Substitutes: Parts meeting or exceeding the minimum Vdss, Id, and package requirements while maintaining TO-220-3 form factor. These include devices from STMicroelectronics (STF and STP series), Infineon Technologies (CoolMOS™), Panjit International (PJMF series), and Toshiba Semiconductor (π-MOSVII series).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Pd Max (W)	Package	Status
FDPF16N50	onsemi	500	16	380 @ 8A, 10V	45 @ 10V	38.5	TO-220F-3	Obsolete
FDPF16N50T	onsemi	500	16	380 @ 8A, 10V	45 @ 10V	38.5	TO-220F-3	Obsolete
FCPF360N65S3R0L-F154	onsemi	650	10	360 @ 5A, 10V	18 @ 10V	27	TO-220F-3	Not For New Designs
IPA50R350CPXKSA1	Infineon Technologies	500	10	350 @ 5.6A, 10V	25 @ 10V	32	PG-TO220-3-31	Last Time Buy
PJMF360N60EC_T0_00001	Panjit International Inc.	600	11	360 @ 5.5A, 10V	18.7 @ 10V	30	ITO-220AB-F	Active
STF11NM50N	STMicroelectronics	500	8.5	470 @ 4.5A, 10V	19 @ 10V	25	TO-220FP	Active
STF12N50M2	STMicroelectronics	500	10	380 @ 5A, 10V	15 @ 10V	85	TO-220FP	Active
STF14NM50N	STMicroelectronics	500	12	320 @ 6A, 10V	27 @ 10V	25	TO-220FP	Active
STP12NM50FP	STMicroelectronics	500	12	350 @ 6A, 10V	39 @ 10V	35	TO-220FP	Active
STP14NK50ZFP	STMicroelectronics	500	14	380 @ 6A, 10V	92 @ 10V	35	TO-220FP	Active
TK13A50D(STA4,Q,M)	Toshiba Semiconductor and Storage	500	13	400 @ 6.5A, 10V	38 @ 10V	45	TO-220SIS	Active

Engineering Selection Recommendations

Direct Parametric Equivalent: FDPF16N50T is the primary equivalent, offering identical electrical specifications and package configuration. Both parts are classified as obsolete; however, FDPF16N50T maintains higher inventory availability (7,874 units) compared to the original FDPF16N50 (36,936 units).

Active Production Alternatives: For new designs or long-term production continuity, the following active-status parts provide suitable substitution:

STMicroelectronics MDmesh™ II Series:

STF14NM50N (12A, 500V) and STP14NK50ZFP (14A, 500V) deliver current ratings closest to the FDPF16N50 while maintaining 500V Vdss rating. Both are active products with robust inventory levels.
STF12N50M2 (10A, 500V) offers superior power dissipation (85W) and lower gate charge (15 nC), reducing switching losses in high-frequency applications.

Toshiba π-MOSVII Series:

TK13A50D(STA4,Q,M) (13A, 500V) provides 45W power dissipation and 500V rating with active product status.

Infineon CoolMOS™ Series:

IPA50R350CPXKSA1 (10A, 500V) is classified as Last Time Buy but offers superior Rds On (350 mOhm) and lower gate charge (25 nC) for improved efficiency.

Panjit International Super Junction MOSFET:

PJMF360N60EC_T0_00001 (11A, 600V) is the only active-status part with higher voltage rating, providing additional design margin. Package variant (ITO-220AB-F with isolated tab) differs from standard TO-220F-3.

onsemi SuperFET® III Series:

FCPF360N65S3R0L-F154 (10A, 650V) is classified as Not For New Designs but offers higher voltage rating and lower gate charge (18 nC) for applications requiring voltage margin.

All recommended substitutes maintain RoHS3 compliance, REACH unaffected status, and EAR99 ECCN classification consistent with the original FDPF16N50.

Frequently Asked Questions (FAQ)

Q: Can FDPF16N50T be used as a direct replacement for FDPF16N50?

A: Yes. FDPF16N50T is a parametric equivalent with identical Vdss (500V), Id (16A), Rds On (380 mOhm), gate charge (45 nC), power dissipation (38.5W), and TO-220F-3 package. Both parts are obsolete; however, FDPF16N50T maintains higher inventory availability.

Q: What is the minimum drain current rating required for substitution?

A: The FDPF16N50 operates at 16A continuous drain current. Substitute parts must meet or exceed this rating at 25°C to ensure equivalent thermal performance and current handling capability. Parts rated below 16A (such as STF11NM50N at 8.5A) are not direct substitutes but may be acceptable in applications with reduced current requirements.

Q: Are TO-220FP and TO-220F-3 packages interchangeable?

A: TO-220FP and TO-220F-3 are both through-hole TO-220 variants with three leads and full-pack configuration. Pin assignments and mechanical dimensions are compatible for PCB mounting. However, thermal characteristics and tab isolation may differ; verify specific package documentation for isolated versus non-isolated tab requirements.

Q: Which substitute offers the best thermal performance?

A: STF12N50M2 provides the highest power dissipation rating at 85W (compared to FDPF16N50 at 38.5W), enabling superior thermal performance in high-power applications. This part also features the lowest gate charge (15 nC) among 500V substitutes, reducing switching losses.

Q: Can I use a 600V or 650V rated MOSFET in place of the 500V FDPF16N50?

A: Yes. Higher voltage-rated devices (PJMF360N60EC_T0_00001 at 600V or FCPF360N65S3R0L-F154 at 650V) provide additional voltage margin and are electrically compatible in 500V applications. However, these parts typically exhibit higher Rds On and input capacitance, resulting in increased conduction and switching losses. Verify thermal and efficiency requirements before substitution.

Q: What is the significance of gate charge (Qg) in MOSFET substitution?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge (such as STF12N50M2 at 15 nC versus FDPF16N50 at 45 nC) reduces switching losses and enables higher switching frequencies. Higher gate charge (STP14NK50ZFP at 92 nC) increases switching losses but may provide improved noise immunity in certain applications.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed maintain RoHS3 compliance and REACH unaffected status, consistent with the original FDPF16N50. Verify specific product certifications for applications requiring additional compliance documentation.

Q: What is the difference between active, obsolete, and last-time-buy product status?

A: Active products are in current production with ongoing support and availability. Obsolete products are no longer manufactured; existing inventory may be available but future supply is not guaranteed. Last Time Buy products are in final production phase with defined end-of-life dates; procurement must occur before the specified cutoff date. For long-term production continuity, prioritize active-status substitutes such as STMicroelectronics or Toshiba devices.

Q: Can I substitute a lower-current-rated MOSFET if my application uses less than 16A?

A: Substitution with lower current ratings is application-dependent. If your circuit operates below the substitute part's rated current, electrical compatibility is maintained. However, verify that the substitute's Rds On, power dissipation, and thermal characteristics remain acceptable for your specific operating conditions. Consult thermal analysis and circuit simulation to confirm suitability.

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