FDMC013P030Z P-Channel MOSFET 30V 54A Equivalent & Substitute Parts

Part Overview

The FDMC013P030Z is a P-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage with 54A continuous drain current at 25°C. This device is housed in an 8-MLP (3.3x3.3) surface mount package and is designed for high-current switching applications requiring compact form factors.

The FDMC013P030Z is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.

Substiute Parts

FDMC013P030Z

onsemiIn Stock: 2196FDMC013P030Z Datasheet

Current PartRFQ

SIS427EDN-T1-GE3

Vishay SiliconixIn Stock: 7487SIS427EDN-T1-GE3 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the FDMC013P030Z is determined by strict alignment of the following electrical and mechanical parameters:

Primary Substitution Criteria:

• FET Type: P-Channel
• Drain to Source Voltage (Vdss): 30V
• Continuous Drain Current (Id): Minimum 54A at 25°C
• Rds On (Max): Within acceptable range for application switching losses
• Gate Charge (Qg): Comparable for driver circuit compatibility
• Vgs(th): Within ±25V gate voltage specification
• Operating Temperature Range: -55°C to 150°C (TJ)
• Mounting Type: Surface Mount
• RoHS Compliance: ROHS3 Compliant

Package Consideration: The FDMC013P030Z uses an 8-PowerWDFN package. Substitute parts may employ alternative surface mount packages (such as PowerPAK® 1212-8) provided the electrical parameters remain within specification and the physical footprint is compatible with the application's PCB layout.

The SIS427EDN-T1-GE3 meets the primary electrical criteria with a 50A continuous drain current rating, 30V Vdss, comparable gate charge characteristics, and equivalent temperature operating range. Both devices are ROHS3 compliant and MSL 1 rated.

Parameter Comparison

Engineering Selection Recommendations

Product Status Consideration: The FDMC013P030Z is classified as obsolete. The SIS427EDN-T1-GE3 is classified as active, ensuring ongoing availability and manufacturer support for new designs and production continuity.

Compliance and Certifications: Both the FDMC013P030Z and SIS427EDN-T1-GE3 are ROHS3 compliant and carry MSL 1 (Unlimited) moisture sensitivity ratings. Both are classified under ECCN EAR99 and HTSUS 8541.29.0095. The SIS427EDN-T1-GE3 carries REACH status information available upon request, while the FDMC013P030Z is REACH unaffected.

Electrical Performance: The SIS427EDN-T1-GE3 provides 50A continuous drain current, which is 4A lower than the FDMC013P030Z specification of 54A. The substitute part exhibits lower gate charge (66 nC versus 135 nC) and lower input capacitance (1930 pF versus 5785 pF), resulting in reduced driver circuit loading and improved switching efficiency. The Rds On specification of the substitute is slightly higher (10.6 mOhm versus 7 mOhm), which must be evaluated against application thermal and efficiency requirements.

Package Compatibility: The FDMC013P030Z uses an 8-PowerWDFN package, while the SIS427EDN-T1-GE3 uses a PowerPAK® 1212-8 package. PCB layout modifications are required for package substitution. Physical footprint verification is mandatory before component selection.

Frequently Asked Questions (FAQ)

Q: Can the SIS427EDN-T1-GE3 directly replace the FDMC013P030Z without PCB modifications?

A: No. While both devices are P-Channel MOSFETs with 30V Vdss ratings, they use different surface mount packages (8-PowerWDFN versus PowerPAK® 1212-8). PCB layout and footprint modifications are required. Electrical compatibility is confirmed; physical compatibility requires design review.

Q: What is the significance of the 4A difference in continuous drain current (54A versus 50A)?

A: The FDMC013P030Z is rated for 54A continuous drain current, while the SIS427EDN-T1-GE3 is rated for 50A. Applications operating at or near the 54A specification limit must verify that the 50A rating of the substitute part is sufficient for the intended duty cycle and thermal conditions. Thermal analysis is required for applications at the upper current limits.

Q: Why does the SIS427EDN-T1-GE3 have lower gate charge and input capacitance?

A: Gate charge and input capacitance are intrinsic device characteristics determined by die design and process technology. The SIS427EDN-T1-GE3 exhibits lower values (66 nC and 1930 pF respectively) compared to the FDMC013P030Z (135 nC and 5785 pF). Lower values reduce driver circuit loading and switching losses, which may improve overall system efficiency.

Q: Is the higher Rds On of the SIS427EDN-T1-GE3 (10.6 mOhm versus 7 mOhm) a concern?

A: The Rds On difference must be evaluated within the context of the application's current profile and thermal budget. Higher Rds On results in increased conduction losses. For applications with continuous high-current operation, thermal analysis is required to confirm that the substitute part's 52W power dissipation rating (Tc) is adequate compared to the original 30W rating (Tc).

Q: Are both devices suitable for the same operating temperature range?

A: Yes. Both the FDMC013P030Z and SIS427EDN-T1-GE3 operate across the -55°C to 150°C (TJ) temperature range. No temperature-related limitations exist for substitution.

Q: What compliance certifications apply to both devices?

A: Both devices are ROHS3 compliant, carry MSL 1 (Unlimited) moisture sensitivity ratings, and are classified under ECCN EAR99 and HTSUS 8541.29.0095. The SIS427EDN-T1-GE3 has REACH status information available upon request. These certifications confirm suitability for regulated markets and supply chain applications.

Q: Can the SIS427EDN-T1-GE3 be used in existing designs without circuit modifications?

A: Electrical substitution is feasible provided the 50A continuous current rating meets application requirements and thermal analysis confirms adequate power dissipation margin. However, PCB layout modifications are mandatory due to package differences. Gate drive circuit compatibility should be verified, as the lower gate charge may allow faster switching with existing driver circuits.