FDMC013P030Z >
FDMC013P030Z
onsemi
MOSFET P-CHANNEL 30V 54A 8MLP
2196 Pcs New Original In Stock
P-Channel 30 V 54A (Tc) 30W (Tc) Surface Mount 8-MLP (3.3x3.3)
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FDMC013P030Z onsemi
5.0 / 5.0 - (23 Ratings)

FDMC013P030Z

Product Overview

12847785

DiGi Electronics Part Number

FDMC013P030Z-DG

Manufacturer

onsemi
FDMC013P030Z

Description

MOSFET P-CHANNEL 30V 54A 8MLP

Inventory

2196 Pcs New Original In Stock
P-Channel 30 V 54A (Tc) 30W (Tc) Surface Mount 8-MLP (3.3x3.3)
Quantity
Minimum 1

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FDMC013P030Z Technical Specifications

Category Transistors, FETs, MOSFETs, Single FETs, MOSFETs

Manufacturer onsemi

Packaging -

Series -

Product Status Obsolete

FET Type P-Channel

Technology MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) 30 V

Current - Continuous Drain (Id) @ 25°C 54A (Tc)

Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V

Rds On (Max) @ Id, Vgs 7mOhm @ 14A, 10V

Vgs(th) (Max) @ Id 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs 135 nC @ 10 V

Vgs (Max) ±25V

Input Capacitance (Ciss) (Max) @ Vds 5785 pF @ 15 V

FET Feature -

Power Dissipation (Max) 30W (Tc)

Operating Temperature -55°C ~ 150°C (TJ)

Mounting Type Surface Mount

Supplier Device Package 8-MLP (3.3x3.3)

Package / Case 8-PowerWDFN

Base Product Number FDMC013

Datasheet & Documents

HTML Datasheet

FDMC013P030Z-DG

Environmental & Export Classification

RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095

Additional Information

Other Names
FDMC013P030Z-DG
FDMC013P030ZOSCT
FDMC013P030ZOSDKR
FDMC013P030ZOSTR
Standard Package
3,000

Alternative Parts

View Details
PART NUMBER
MANUFACTURER
QUANTITY AVAILABLE
DiGi PART NUMBER
UNIT PRICE
SUBSTITUTE TYPE
SIS427EDN-T1-GE3
Vishay Siliconix
7487
SIS427EDN-T1-GE3-DG
0.2091
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5.0/5.0-(Show up to 5 Ratings)
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December 02, 2025
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Frequently Asked Questions (FAQ)

What are the main design risks when using the FDMC013P030Z in a high-temperature environment near its maximum junction temperature of 150°C?

When operating the FDMC013P030Z near 150°C, thermal runaway is a key risk due to increased Rds(on) with temperature. Even though the device is rated for 30W (Tc), ensure your PCB provides sufficient copper mass and thermal vias to maintain a low thermal resistance. Without proper heatsinking, localized heating can push the junction beyond safe limits, especially under continuous 54A loads. Use thermal simulation during layout and consider derating current above 100°C ambient to maintain reliability and avoid premature failure.

Can the FDMC013P030Z be replaced with the SIS427EDN-T1-GE3 in an existing design, and what layout or drive considerations should I verify?

Replacing the FDMC013P030Z with the SIS427EDN-T1-GE3 requires checking gate drive compatibility—SIS427EDN has a lower Rds(on) but slightly higher Qg (140nC vs 135nC), which may increase switching losses if your controller can’t source/sink fast enough. Both are 8-MLP (3.3x3.3) footprint compatible, but verify thermal pad alignment and grounding strategy. The SIS427EDN also has a tighter Vgs(th) range, so ensure your gate drive doesn’t exceed ±20V to avoid overvoltage stress during transients.

How does the FDMC013P030Z perform at 4.5V gate drive, and is it suitable for 5V-only microcontroller-based switching applications?

The FDMC013P030Z is specified for 4.5V and 10V drive, but at 4.5V, Rds(on) will be higher than the 7mΩ rated at 10V—expect up to 20–30% increase depending on temperature. For 5V microcontroller applications, ensure the driver can deliver sufficient peak current to charge the 5785 pF Ciss quickly and minimize cross-conduction time. Consider adding a dedicated gate driver IC to improve turn-on/off speed and reduce conduction losses, especially in PWM applications above 50kHz.

What PCB layout practices are critical to maximize current handling and thermal performance of the FDMC013P030Z in a 54A application?

To reliably support 54A with the FDMC013P030Z, use at least 2oz copper and dedicate internal layers for thermal dissipation. The 8-MLP thermal pad must be fully soldered with an array of grounded thermal vias (minimum 6x in pad) to transfer heat to inner layers or backside copper. Keep high-current traces wide and short, and avoid sharp bends to prevent current crowding. Poor layout can result in localized heating even below rated current, leading to early failure or thermal shutdown in tightly packed boards.

Why is the FDMC013P030Z marked as obsolete, and what long-term reliability concerns should I consider for new designs or system maintenance?

The FDMC013P030Z is listed as obsolete, meaning onsemi no longer manufactures it, posing supply chain and lifecycle risks for new designs. While current stock is available, long-term maintenance and production scalability are concerns. For mission-critical or high-volume applications, consider pin-compatible alternatives like SIS427EDN-T1-GE3 with active production status. If using FDMC013P030Z, secure sufficient lifetime buy inventory and verify second-source availability to mitigate end-of-life disruptions.

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