2N708 Equivalent & Substitute Bipolar (BJT) Transistor Reference

Part Overview

The 2N708 from Microchip Technology is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a 15 V collector-emitter breakdown voltage, 360 mW maximum power dissipation, and low collector cutoff current, housed in a TO-18 (TO-206AA) metal can package for through-hole mounting. This product is currently active and available in inventory. Identifying alternative models with equivalent electrical and mechanical characteristics is essential for maintaining continuous production, ensuring sourcing flexibility, and accommodating compliance or supply chain requirements.

Substiute Parts

2N708

Microchip TechnologyIn Stock: 7272N708 Datasheet

Current PartRFQ

2N708 PBFREE

Central Semiconductor CorpIn Stock: 38322N708 PBFREE Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts are grouped based on matching electrical and mechanical parameters explicitly provided for the 2N708 category. These key substitution criteria are:

• Transistor Type (NPN)
• Voltage - Collector Emitter Breakdown (15 V)
• DC Current Gain (hFE) (≥ 30 @ 10mA, 1V)
• Collector Cutoff Current (ICBO)
• Mounting Type (Through Hole)
• Package / Case (TO-206AA, TO-18-3 Metal Can)
• Product Status (Active)

Only parts that strictly meet these specified parameters are included as equivalents.

Parameter Comparison

Engineering Selection Recommendations

Selection between 2N708 and 2N708 PBFREE is supported by identical transistor type, voltage rating, DC current gain, mounting type, package, and product status. Both parts are listed as active. The 2N708 PBFREE holds RoHS3 compliance and a Moisture Sensitivity Level (MSL) of 1 (Unlimited). Both parts are classified as REACH Unaffected and ECCN EAR99.

Frequently Asked Questions (FAQ)

Q1: What are the critical parameters for BJT transistor substitution in the TO-18 (TO-206AA) category?
A1: Critical substitution parameters include transistor type (NPN), voltage-collector emitter breakdown, DC current gain (hFE) at specified test conditions, collector cutoff current, mounting type, mechanical package, and product status.

Q2: Are 2N708 and 2N708 PBFREE interchangeable based on electrical and mechanical parameters?
A2: Yes. Both share identical transistor type, breakdown voltage, DC current gain, through-hole mounting, and TO-18 (TO-206AA) mechanical package. Collector cutoff current differs in unit, but matches the specified parameter field.

Q3: Is the package compatibility ensured for both parts?
A3: Yes. Both components use the TO-206AA, TO-18-3 Metal Can package and are supplied in TO-18 form factor for through-hole mounting.

Q4: What inventory and compliance considerations are available for both models?
A4: Both models are active with inventory listed. 2N708 PBFREE includes RoHS3 compliance and MSL classification, while the original 2N708 is REACH Unaffected and EAR99 designated.

Q5: Does the temperature range affect substitution?
A5: Operating temperature is provided only for the 2N708. If required for selection, reference the provided operating temperature for the main part only, as no temperature data is specified for the substitute.