ZXTP722MATA PNP Bipolar Transistor Equivalent & Substitute Parts

Part Overview

The ZXTP722MATA is an active production PNP bipolar junction transistor manufactured by Diodes Incorporated, rated for 70 V collector-emitter breakdown voltage and 2.5 A maximum collector current. This device is packaged in a 3-UDFN (DFN2020B-3) surface mount configuration and is designed for general-purpose switching and amplification applications requiring moderate voltage and current handling capability.

Substitute parts become necessary when the primary device experiences supply constraints, extended lead times, or when design requirements permit operation within alternative electrical and mechanical specifications. The substitute parts listed maintain compatibility through equivalent transistor type classification (PNP), surface mount technology, and overlapping electrical operating ranges.

Key Parameters

Parameter	ZXTP722MATA
Transistor Type	PNP
Collector-Emitter Breakdown Voltage (Max)	70 V
Collector Current (Max)	2.5 A
Power Dissipation (Max)	3 W
Transition Frequency	180 MHz
Vce Saturation (Max)	260 mV @ 200 mA, 1.5 A
DC Current Gain (hFE Min)	40 @ 1.5 A, 5 V
Operating Temperature Range	-55°C to 150°C (TJ)
Mounting Type	Surface Mount
Package	3-UDFN (DFN2020B-3)
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level	1 (Unlimited)

Substitute Part Grouping Explanation

Substitution eligibility for the ZXTP722MATA is determined by the following criteria:

Primary Substitution Criteria:

Transistor type must be PNP
Mounting technology must be surface mount
Collector-emitter breakdown voltage must equal or exceed the application requirement
Maximum collector current must equal or exceed the application requirement
Power dissipation capability must support the intended circuit operation
Operating temperature range must encompass the application environment

Secondary Compatibility Factors:

RoHS and REACH compliance status
Moisture sensitivity level
Package form factor (mechanical fit and thermal characteristics)

The two substitute parts listed (PBSS5560PA,115 and PBSS9410PA,115) are both manufactured by Nexperia USA Inc. and feature the 3-PowerUDFN (3-HUSON 2x2) package. Both devices maintain PNP transistor classification and surface mount technology. Each substitute presents distinct electrical trade-offs relative to the ZXTP722MATA across voltage rating, current capacity, and frequency response.

Parameter Comparison

Parameter	ZXTP722MATA	PBSS5560PA,115	PBSS9410PA,115
Manufacturer	Diodes Incorporated	Nexperia USA Inc.	Nexperia USA Inc.
Transistor Type	PNP	PNP	PNP
Collector-Emitter Breakdown Voltage (Max)	70 V	60 V	100 V
Collector Current (Max)	2.5 A	5 A	2.7 A
Power Dissipation (Max)	3 W	2.1 W	2.1 W
Transition Frequency	180 MHz	90 MHz	115 MHz
Vce Saturation (Max)	260 mV @ 200 mA, 1.5 A	450 mV @ 250 mA, 5 A	450 mV @ 135 mA, 2.7 A
DC Current Gain (hFE Min)	40 @ 1.5 A, 5 V	150 @ 2 A, 2 V	170 @ 1 A, 2 V
Operating Temperature (Max)	150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount
Package	3-UDFN (DFN2020B-3)	3-PowerUDFN (3-HUSON 2x2)	3-PowerUDFN (3-HUSON 2x2)
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

PBSS5560PA,115 Substitution Profile:

The PBSS5560PA,115 is suitable for applications where collector current requirements exceed 2.5 A and the circuit operates at voltages not exceeding 60 V. This device provides higher current capacity (5 A maximum) compared to the ZXTP722MATA. The reduced collector-emitter breakdown voltage (60 V versus 70 V) restricts use to lower voltage applications. The transition frequency of 90 MHz is lower than the ZXTP722MATA, making this substitute appropriate for lower-frequency switching applications. Power dissipation is reduced to 2.1 W. All regulatory compliance certifications (ROHS3, REACH Unaffected) are maintained. Package form factor differs (3-HUSON 2x2 versus DFN2020B-3), requiring PCB layout modification.

PBSS9410PA,115 Substitution Profile:

The PBSS9410PA,115 is suitable for applications requiring higher collector-emitter breakdown voltage (100 V maximum) while maintaining comparable collector current capacity (2.7 A maximum). This device provides voltage headroom beyond the ZXTP722MATA specification. The transition frequency of 115 MHz falls between the ZXTP722MATA (180 MHz) and PBSS5560PA,115 (90 MHz). Power dissipation is 2.1 W. All regulatory compliance certifications (ROHS3, REACH Unaffected) are maintained. Package form factor differs (3-HUSON 2x2 versus DFN2020B-3), requiring PCB layout modification.

Both substitute parts maintain active product status and unlimited moisture sensitivity level (MSL 1), ensuring consistent availability and handling requirements equivalent to the primary device.

Frequently Asked Questions (FAQ)

Q: Can PBSS5560PA,115 replace ZXTP722MATA in all applications?

A: No. The PBSS5560PA,115 has a maximum collector-emitter breakdown voltage of 60 V, which is 10 V lower than the ZXTP722MATA. This substitute is only suitable for circuits operating at 60 V or below. Additionally, the package form factor differs, requiring PCB redesign.

Q: What is the primary advantage of PBSS9410PA,115 over ZXTP722MATA?

A: The PBSS9410PA,115 provides a higher collector-emitter breakdown voltage rating of 100 V compared to 70 V on the ZXTP722MATA. This allows operation in higher voltage circuits. Collector current capacity is comparable (2.7 A versus 2.5 A). The package form factor differs, requiring PCB layout modification.

Q: Are package differences between DFN2020B-3 and 3-HUSON (2x2) significant?

A: Yes. These are different package geometries. The DFN2020B-3 (ZXTP722MATA) and 3-HUSON 2x2 (PBSS5560PA,115 and PBSS9410PA,115) have different footprints, pin spacing, and thermal characteristics. PCB layout and thermal design must be re-evaluated when substituting between these packages.

Q: Do all three devices have identical compliance certifications?

A: Yes. ZXTP722MATA, PBSS5560PA,115, and PBSS9410PA,115 are all ROHS3 compliant, REACH unaffected, and carry MSL 1 (unlimited) moisture sensitivity level ratings.

Q: Which substitute part has the highest transition frequency?

A: The ZXTP722MATA has the highest transition frequency at 180 MHz. The PBSS9410PA,115 operates at 115 MHz, and the PBSS5560PA,115 operates at 90 MHz. For high-frequency switching applications, the ZXTP722MATA is the preferred choice.

Q: Can PBSS5560PA,115 handle higher current than ZXTP722MATA?

A: Yes. The PBSS5560PA,115 has a maximum collector current rating of 5 A compared to 2.5 A for the ZXTP722MATA. However, the maximum power dissipation is lower (2.1 W versus 3 W), which may limit sustained high-current operation depending on thermal management.

Q: What is the impact of different Vce saturation values?

A: The ZXTP722MATA has a Vce saturation of 260 mV at specified conditions, while both Nexperia substitutes have 450 mV saturation. Higher saturation voltage results in greater voltage drop across the transistor in saturation mode, increasing power dissipation and heat generation in the circuit.

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