ZXMP3F37DN8TA Equivalent & Substitute Parts

Part Overview

The ZXMP3F37DN8TA is a dual P-channel MOSFET array manufactured by Diodes Incorporated, rated for 30V drain-to-source voltage and 5.7A continuous drain current. This component is classified as obsolete, necessitating identification of active equivalent parts for new designs and ongoing production requirements. Substitute parts must maintain electrical and mechanical compatibility within the specified parameter ranges while offering active product status and continued manufacturer support.

Substiute Parts

ZXMP3F37DN8TA

Diodes IncorporatedIn Stock: 20399ZXMP3F37DN8TA Datasheet

Current PartRFQ

FDS6975

onsemiIn Stock: 28676FDS6975 Datasheet

MFR RecommendedRFQ

SI4925BDY-T1-E3

Vishay SiliconixIn Stock: 19796SI4925BDY-T1-E3 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the ZXMP3F37DN8TA is determined by the following critical parameters:

Electrical Compatibility Requirements:

• Drain to Source Voltage (Vdss): Must equal or exceed 30V
• Configuration: Must be 2 P-Channel (Dual) MOSFET array
• Continuous Drain Current (Id): Must support minimum 5.7A at 25°C
• Gate Threshold Voltage (Vgs(th)): Must equal 3V @ 250µA for logic-level operation
• On-State Resistance (Rds On): Must not exceed 25 mOhm @ 7.1A, 10V

Mechanical Compatibility Requirements:

• Package / Case: Must be 8-SOIC (0.154", 3.90mm Width)
• Mounting Type: Surface Mount
• Moisture Sensitivity Level (MSL): Must be 1 (Unlimited) or equivalent

Regulatory Compliance Requirements:

• RoHS Status: ROHS3 Compliant
• Operating Temperature Range: Must support -55°C to 150°C (TJ)

The identified substitute parts meet all electrical, mechanical, and regulatory criteria for direct replacement in applications utilizing the ZXMP3F37DN8TA.

Parameter Comparison

Engineering Selection Recommendations

FDS6975 (onsemi): The FDS6975 is an active product offering superior continuous drain current (6A versus 5.7A) and reduced gate charge (20 nC @ 5V versus 31.6 nC @ 10V), resulting in faster switching characteristics. On-state resistance is slightly elevated at 32 mOhm compared to the original 25 mOhm specification. This part is suitable for applications where increased current capacity and reduced switching losses are beneficial. ROHS3 compliance and MSL 1 rating ensure regulatory and environmental compatibility.

SI4925BDY-T1-E3 (Vishay Siliconix): The SI4925BDY-T1-E3 is an active product with electrical characteristics closely matching the original ZXMP3F37DN8TA, including identical on-state resistance (25 mOhm @ 7.1A, 10V) and gate threshold voltage (3V @ 250µA). Continuous drain current is rated at 5.3A, slightly below the original specification. Gate charge is elevated at 50 nC @ 10V. This part provides the most direct electrical equivalence for applications requiring minimal design modification. ROHS3 compliance and MSL 1 rating ensure regulatory and environmental compatibility.

Both substitute parts maintain the required 30V Vdss rating, dual P-channel configuration, 8-SOIC package geometry, and full operating temperature range. Selection between these alternatives depends on application-specific requirements for current capacity, switching speed, and thermal dissipation characteristics.

Frequently Asked Questions (FAQ)

Q: Can the FDS6975 be used as a direct replacement for the ZXMP3F37DN8TA?

A: The FDS6975 is electrically compatible within the specified parameter ranges. Both parts share identical Vdss (30V), configuration (2 P-Channel), gate threshold voltage (3V @ 250µA), and package geometry (8-SOIC). The FDS6975 offers higher continuous drain current (6A versus 5.7A) and lower gate charge. On-state resistance is slightly higher (32 mOhm versus 25 mOhm). Substitution is valid for applications where these parameter variations are acceptable.

Q: Can the SI4925BDY-T1-E3 be used as a direct replacement for the ZXMP3F37DN8TA?

A: The SI4925BDY-T1-E3 is electrically compatible within the specified parameter ranges. Both parts share identical Vdss (30V), configuration (2 P-Channel), gate threshold voltage (3V @ 250µA), on-state resistance (25 mOhm @ 7.1A, 10V), and package geometry (8-SOIC). Continuous drain current is rated at 5.3A, slightly below the original 5.7A specification. Substitution is valid for applications where this current reduction is acceptable.

Q: Are there package compatibility concerns when substituting these parts?

A: All three parts utilize the 8-SOIC package with identical dimensions (0.154", 3.90mm Width). PCB footprints and assembly processes are directly compatible. No package-related design modifications are required.

Q: Do the substitute parts meet the same regulatory and environmental standards?

A: Both substitute parts are ROHS3 compliant and carry MSL 1 (Unlimited) moisture sensitivity ratings, matching the original ZXMP3F37DN8TA specifications. All parts are REACH unaffected and classified under ECCN EAR99.

Q: What is the primary difference between the FDS6975 and SI4925BDY-T1-E3?

A: The FDS6975 offers higher continuous drain current (6A) and lower gate charge (20 nC @ 5V), making it suitable for applications requiring faster switching or higher current capacity. The SI4925BDY-T1-E3 provides closer electrical matching to the original part, with identical on-state resistance and lower gate charge at the cost of slightly reduced continuous drain current (5.3A).

Q: What operating temperature range do the substitute parts support?

A: Both substitute parts support the full operating temperature range of -55°C to 150°C (TJ), matching the original ZXMP3F37DN8TA specification.