ZXMN6A09DN8TC Equivalent & Substitute Parts

Part Overview

The ZXMN6A09DN8TC is a dual N-channel MOSFET array manufactured by Diodes Incorporated, rated for 60V drain-to-source voltage with 4.3A continuous drain current. This device is configured as a logic-level gate MOSFET in an 8-SOIC surface mount package and is classified as obsolete. Due to its obsolete product status, equivalent substitute parts with compatible electrical and mechanical specifications are necessary for ongoing design support and procurement continuity.

Substiute Parts

ZXMN6A09DN8TC

Diodes IncorporatedIn Stock: 18941ZXMN6A09DN8TC Datasheet

Current PartRFQ

SP8K33FRATB

Rohm SemiconductorIn Stock: 3515SP8K33FRATB Datasheet

MFR RecommendedRFQ

STS4DNF60L

STMicroelectronicsIn Stock: 15551STS4DNF60L Datasheet

MFR RecommendedRFQ

STS5DNF60L

STMicroelectronicsIn Stock: 1000335STS5DNF60L Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the ZXMN6A09DN8TC is determined by the following critical parameters:

Electrical Compatibility Criteria:

• Drain to Source Voltage (Vdss): Must equal or exceed 60V
• Configuration: Must be 2 N-Channel (Dual) MOSFET array
• Continuous Drain Current (Id): Must support minimum 4.3A at 25°C
• Gate threshold voltage (Vgs(th)): Must be compatible with logic-level gate operation
• On-state resistance (Rds On): Lower values indicate improved performance

Mechanical Compatibility Criteria:

• Package / Case: 8-SOIC (0.154", 3.90mm Width) form factor
• Mounting Type: Surface Mount
• Pin configuration: Must maintain functional equivalence in dual N-channel topology

Compliance Criteria:

• RoHS3 Compliance: Required
• Moisture Sensitivity Level (MSL): Level 1 acceptable
• REACH Status: REACH Unaffected acceptable

The substitute parts listed below meet all electrical and mechanical compatibility requirements while maintaining or improving upon the original specifications.

Parameter Comparison

Engineering Selection Recommendations

STS5DNF60L (Primary Substitute)

The STS5DNF60L from STMicroelectronics is the recommended primary substitute for the ZXMN6A09DN8TC. This device exceeds the original specifications with 5A continuous drain current versus 4.3A, improved on-state resistance of 45mOhm, and maintains full compatibility with the 8-SOIC package footprint. The part is active in production status, ensuring long-term availability. It carries AEC-Q101 automotive qualification and operates across the full temperature range of -55°C to 150°C, matching the original device. The STripFET™ II series technology provides enhanced performance characteristics with lower gate charge and input capacitance.

STS4DNF60L (Secondary Substitute)

The STS4DNF60L from STMicroelectronics provides a direct current-rated alternative at 4A, closely matching the original 4.3A specification. This device features logic-level gate operation consistent with the ZXMN6A09DN8TC and operates across the identical temperature range. The STripFET™ series designation indicates proven reliability in industrial applications. This part is suitable for applications where current headroom is not a design priority.

SP8K33FRATB (Automotive-Grade Substitute)

The SP8K33FRATB from Rohm Semiconductor offers 5A continuous drain current with automotive-grade qualification (AEC-Q101). This device provides superior performance with the lowest gate charge (12nC) and input capacitance (620pF) among the substitute options, resulting in faster switching characteristics. The part is active in production. Note that the maximum operating temperature is specified as 150°C without explicit lower temperature limit documentation in the provided parameters.

All three substitute parts maintain the dual N-channel configuration, 60V Vdss rating, 8-SOIC package form factor, and RoHS3 compliance required for direct substitution.

Frequently Asked Questions (FAQ)

Q: Can the STS5DNF60L directly replace the ZXMN6A09DN8TC in existing PCB designs?

A: Yes. The STS5DNF60L maintains identical 8-SOIC package dimensions (0.154", 3.90mm width) and pin configuration as a dual N-channel MOSFET array. No PCB layout modifications are required. The electrical specifications are compatible, with improved performance characteristics including higher current rating (5A vs. 4.3A) and lower on-state resistance (45mOhm vs. 40mOhm).

Q: What is the primary difference between STS4DNF60L and STS5DNF60L?

A: The primary difference is continuous drain current rating: STS4DNF60L is rated for 4A while STS5DNF60L is rated for 5A. Both devices share identical voltage ratings (60V Vdss), package form factor (8-SOIC), and operating temperature range (-55°C to 150°C). The STS5DNF60L also features slightly lower on-state resistance (45mOhm vs. 55mOhm) and belongs to the STripFET™ II series versus the original STripFET™ series.

Q: Are the substitute parts suitable for automotive applications?

A: The STS5DNF60L and SP8K33FRATB both carry AEC-Q101 automotive qualification. The STS4DNF60L does not have specified automotive qualification in the provided parameters. For automotive applications, STS5DNF60L or SP8K33FRATB are the appropriate selections.

Q: What is the significance of gate charge (Qg) differences among the substitutes?

A: Gate charge directly affects switching speed and driver power requirements. The ZXMN6A09DN8TC has 24.2nC gate charge, while the substitutes range from 12nC to 15nC. Lower gate charge values result in faster switching transitions and reduced gate driver power dissipation. All substitute parts offer improved gate charge characteristics compared to the original device.

Q: Do all substitute parts have identical moisture sensitivity levels?

A: Yes. The ZXMN6A09DN8TC and all three substitute parts (STS4DNF60L, STS5DNF60L, SP8K33FRATB) are classified as MSL Level 1 (Unlimited), indicating no moisture sensitivity restrictions during storage or handling.

Q: What is the impact of lower input capacitance in the SP8K33FRATB?

A: The SP8K33FRATB has input capacitance of 620pF at 10V, compared to 1407pF at 40V for the original device and 1030pF at 25V for the STMicroelectronics alternatives. Lower input capacitance reduces the charge required to drive the gate, resulting in lower gate driver current requirements and improved switching efficiency. This characteristic is beneficial in high-frequency switching applications.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. The ZXMN6A09DN8TC and all three substitute parts (STS4DNF60L, STS5DNF60L, SP8K33FRATB) are RoHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements.