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ZXMD63N02XTC Equivalent & Substitute Parts
Part Overview
The ZXMD63N02XTC is a dual N-channel MOSFET array manufactured by Diodes Incorporated, designed for surface mount applications in logic-level gate switching circuits. This device integrates two N-channel MOSFETs in an 8-MSOP package with a maximum drain-source voltage rating of 20V and continuous drain current capability of 2.5A per channel.
The ZXMD63N02XTC is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 20 | V |
| Continuous Drain Current (Id) @ 25°C | 2.5 | A |
| On-Resistance (Rds On) @ Id, Vgs | 130 mOhm @ 1.7A, 4.5V | mOhm |
| Gate Threshold Voltage (Vgs(th)) @ Id | 3 | V @ 250µA |
| Gate Charge (Qg) @ Vgs | 6 | nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 700 | pF @ 15V |
| Maximum Power Dissipation | 1.04 | W |
| Operating Temperature Range | -55 to 150 | °C (TJ) |
| Configuration | 2 N-Channel (Dual) | — |
| Package Type | 8-TSSOP, 8-MSOP | — |
| Technology | MOSFET (Metal Oxide) | — |
Substitute Part Grouping Explanation
Substitution of the ZXMD63N02XTC is determined by electrical and mechanical compatibility within the following criteria:
Electrical Compatibility Requirements:
- Drain-Source Voltage (Vdss) rating must equal or exceed 20V
- Continuous drain current (Id) must equal or exceed 2.5A
- Configuration must be dual N-channel (2 N-Channel)
- Operating temperature range must encompass -55°C to 150°C
- Technology must be MOSFET (Metal Oxide)
Mechanical Compatibility Requirements:
- Package type must be 8-TSSOP or 8-MSOP with 0.118" (3.00mm) width
- Mounting type must be surface mount
- Pin count and footprint must be identical
Compliance Requirements:
- RoHS3 compliance required
- Moisture Sensitivity Level (MSL) of 1 or equivalent
- REACH unaffected status required
The IRF7530TRPBF meets all substitution criteria. This part exceeds the minimum electrical specifications of the ZXMD63N02XTC while maintaining identical package geometry and compliance certifications.
Parameter Comparison
| Parameter | ZXMD63N02XTC (Diodes Inc.) | IRF7530TRPBF (Infineon) | Compatibility |
|---|---|---|---|
| Manufacturer | Diodes Incorporated | Infineon Technologies | Different manufacturer |
| Configuration | 2 N-Channel (Dual) | 2 N-Channel (Dual) | Identical |
| Drain-Source Voltage (Vdss) | 20V | 20V | Identical |
| Continuous Drain Current (Id) @ 25°C | 2.5A | 5.4A | Substitute exceeds specification |
| On-Resistance (Rds On) @ Id, Vgs | 130 mOhm @ 1.7A, 4.5V | 30 mOhm @ 5.4A, 4.5V | Substitute has lower resistance |
| Gate Threshold Voltage (Vgs(th)) @ Id | 3V @ 250µA | 1.2V @ 250µA | Substitute has lower threshold |
| Gate Charge (Qg) @ Vgs | 6 nC @ 4.5V | 26 nC @ 4.5V | Substitute has higher gate charge |
| Input Capacitance (Ciss) @ Vds | 700 pF @ 15V | 1310 pF @ 15V | Substitute has higher capacitance |
| Maximum Power Dissipation | 1.04W | 1.3W | Substitute exceeds specification |
| Operating Temperature Range | -55°C to 150°C (TJ) | -55°C to 150°C (TJ) | Identical |
| Package Type | 8-TSSOP, 8-MSOP | 8-TSSOP, 8-MSOP (Micro8™) | Identical footprint |
| Mounting Type | Surface Mount | Surface Mount | Identical |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | Identical |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | Identical |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | Identical |
| REACH Status | REACH Unaffected | REACH Unaffected | Identical |
| Product Status | Obsolete | Not For New Designs | Both legacy status |
Engineering Selection Recommendations
The IRF7530TRPBF is a direct electrical and mechanical substitute for the ZXMD63N02XTC. Both devices share identical voltage ratings, package geometry, and compliance certifications. The IRF7530TRPBF provides superior electrical performance with higher continuous drain current (5.4A versus 2.5A), lower on-resistance (30 mOhm versus 130 mOhm), and increased power dissipation capability (1.3W versus 1.04W).
Both parts carry legacy product status. The ZXMD63N02XTC is classified as obsolete, while the IRF7530TRPBF is designated as not for new designs. Selection between these parts should be based on current inventory availability and supply chain requirements rather than performance differentiation, as the IRF7530TRPBF exceeds all electrical specifications of the original part.
Compliance with RoHS3, REACH, and MSL requirements is maintained across both devices, ensuring regulatory continuity in applications requiring these certifications.
Frequently Asked Questions (FAQ)
Q: Can the IRF7530TRPBF be used as a direct replacement for the ZXMD63N02XTC in existing designs?
A: Yes. The IRF7530TRPBF is electrically and mechanically compatible with the ZXMD63N02XTC. Both devices feature identical 20V Vdss ratings, dual N-channel configuration, 8-MSOP package geometry, and operating temperature range. The IRF7530TRPBF exceeds the current and power specifications of the original part.
Q: What are the key differences between these two parts?
A: The primary differences are manufacturer (Diodes Incorporated versus Infineon Technologies) and electrical performance. The IRF7530TRPBF provides higher continuous drain current (5.4A versus 2.5A), significantly lower on-resistance (30 mOhm versus 130 mOhm at rated conditions), and greater power dissipation capability (1.3W versus 1.04W). Gate threshold voltage is lower in the IRF7530TRPBF (1.2V versus 3V), while gate charge and input capacitance are higher.
Q: Are there any package compatibility concerns?
A: No. Both parts use identical 8-TSSOP/8-MSOP package geometry with 0.118" (3.00mm) width. Pin count, footprint, and surface mount requirements are identical. No PCB layout modifications are required.
Q: Do both parts meet the same compliance standards?
A: Yes. Both the ZXMD63N02XTC and IRF7530TRPBF are RoHS3 compliant, REACH unaffected, and carry MSL rating of 1 (unlimited moisture sensitivity). Regulatory compliance is maintained across both devices.
Q: Why is the IRF7530TRPBF rated as "Not For New Designs"?
A: The IRF7530TRPBF carries legacy product status from Infineon Technologies. This designation indicates the part is available for existing applications but is not recommended for new design implementations. For new designs, consultation with the manufacturer regarding current-generation alternatives is advised.
Q: What impact do the higher gate charge and input capacitance of the IRF7530TRPBF have on circuit operation?
A: The IRF7530TRPBF exhibits higher gate charge (26 nC versus 6 nC) and input capacitance (1310 pF versus 700 pF). These parameters affect gate drive circuit requirements and switching speed. Applications with tight timing constraints or limited gate drive current capacity should evaluate these differences during substitution analysis.
Q: Can the ZXMD63N02XTC be substituted with other dual N-channel MOSFETs in 8-MSOP packages?
A: Substitution requires verification of electrical compatibility across all critical parameters: Vdss rating (minimum 20V), continuous drain current (minimum 2.5A), operating temperature range (-55°C to 150°C), and compliance certifications (RoHS3, REACH, MSL 1). Package geometry must be identical 8-TSSOP/8-MSOP with 0.118" width. Not all dual N-channel MOSFETs in this package meet these requirements.
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