ZXMD63C03XTC MOSFET N/P-Channel 30V Equivalent & Substitute Parts

Part Overview

The ZXMD63C03XTC is a dual N-channel and P-channel MOSFET array manufactured by Diodes Incorporated, designed for surface mount applications in logic-level gate switching circuits. This component integrates complementary MOSFET functionality in a compact 8-MSOP package with a maximum drain-source voltage rating of 30V and maximum power dissipation of 1.04W.

The ZXMD63C03XTC is classified as an obsolete product. Identification of equivalent and substitute components is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this device.

Substiute Parts

ZXMD63C03XTC

Diodes IncorporatedIn Stock: 881ZXMD63C03XTC Datasheet

Current PartRFQ

IRF7509TRPBF

Infineon TechnologiesIn Stock: 15401IRF7509TRPBF Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute components for the ZXMD63C03XTC are identified based on strict electrical and mechanical compatibility criteria. The following parameters establish the substitution basis:

Electrical Compatibility Criteria:

• Drain to Source Voltage (Vdss): Must equal or exceed 30V
• Configuration: Must be N and P-Channel dual MOSFET array
• FET Feature: Must support Logic Level Gate operation
• Operating Temperature Range: Must encompass -55°C to 150°C (TJ)
• Package / Case: Must be 8-TSSOP or 8-MSOP with 0.118" (3.00mm) width

Mechanical Compatibility Criteria:

• Mounting Type: Surface Mount
• Supplier Device Package: Must be compatible with 8-MSOP footprint

Regulatory Compliance Criteria:

• RoHS Status: ROHS3 Compliant
• Moisture Sensitivity Level: MSL 1 (Unlimited)

The IRF7509TRPBF meets all established substitution criteria and is identified as a manufacturer-recommended equivalent for the ZXMD63C03XTC.

Parameter Comparison

Engineering Selection Recommendations

The IRF7509TRPBF manufactured by Infineon Technologies is a direct substitute for the obsolete ZXMD63C03XTC. Selection of this substitute component is supported by the following engineering factors:

Electrical Equivalence: The IRF7509TRPBF maintains identical drain-source voltage rating (30V), gate threshold voltage (1V @ 250µA), and operating temperature range (-55°C to 150°C TJ) as the ZXMD63C03XTC. The substitute component demonstrates improved on-resistance (110 mOhm versus 135 mOhm at 1.7A, 10V) and reduced input capacitance (210 pF versus 290 pF at 25V), resulting in enhanced switching performance and reduced gate drive requirements.

Package and Mechanical Compatibility: Both components utilize identical 8-TSSOP/8-MSOP surface mount packaging with 0.118" (3.00mm) width, ensuring direct footprint compatibility without PCB redesign.

Regulatory and Compliance Status: The IRF7509TRPBF maintains ROHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating, matching the original component specifications. The substitute is actively manufactured and maintained by Infineon Technologies, ensuring long-term supply chain availability and technical support.

Product Status Advantage: The IRF7509TRPBF is classified as an active product with current manufacturing status, providing supply security and continued availability for production requirements.

Frequently Asked Questions (FAQ)

Q: Can the IRF7509TRPBF be used as a direct replacement for the ZXMD63C03XTC without PCB modifications?

A: Yes. Both components share identical 8-TSSOP/8-MSOP package geometry with 0.118" (3.00mm) width. Pin-to-pin compatibility and footprint alignment are equivalent, eliminating the requirement for PCB redesign or layout modifications.

Q: What are the key electrical differences between the ZXMD63C03XTC and IRF7509TRPBF?

A: The IRF7509TRPBF provides improved performance characteristics: on-resistance is reduced from 135 mOhm to 110 mOhm at 1.7A and 10V gate-source voltage, and input capacitance is reduced from 290 pF to 210 pF at 25V drain-source voltage. Maximum power dissipation increases from 1.04W to 1.25W. Gate charge increases from 8 nC to 12 nC at 10V. All other electrical parameters remain equivalent.

Q: Are there any thermal or operating condition limitations when substituting the IRF7509TRPBF?

A: No. Both components operate across the identical temperature range of -55°C to 150°C (junction temperature). The IRF7509TRPBF provides higher maximum power dissipation (1.25W versus 1.04W), offering improved thermal margin in power-limited applications.

Q: Does the IRF7509TRPBF maintain the same logic-level gate drive requirements as the ZXMD63C03XTC?

A: Yes. Both components feature logic-level gate operation with identical gate threshold voltage specifications (1V @ 250µA). Gate drive circuit designs developed for the ZXMD63C03XTC are directly applicable to the IRF7509TRPBF without modification.

Q: What is the supply availability status for each component?

A: The ZXMD63C03XTC is classified as obsolete and no longer actively manufactured by Diodes Incorporated. The IRF7509TRPBF is an active product with current manufacturing status by Infineon Technologies, ensuring reliable long-term supply chain availability.

Q: Are both components RoHS compliant?

A: Yes. Both the ZXMD63C03XTC and IRF7509TRPBF are ROHS3 compliant and carry MSL 1 (Unlimited) moisture sensitivity rating, meeting identical regulatory and environmental standards.

Q: How does the reduced input capacitance of the IRF7509TRPBF affect circuit performance?

A: The reduced input capacitance (210 pF versus 290 pF) results in lower gate charge requirements and faster switching transitions. This characteristic reduces gate drive power consumption and enables higher switching frequency operation in applicable circuit topologies.