ZXMD63C02XTC Equivalent & Substitute Parts

Part Overview

The ZXMD63C02XTC is an N and P-Channel MOSFET array manufactured by Diodes Incorporated, designed for surface mount applications in 8-MSOP packaging. This dual-channel logic level gate device operates at 20V drain-to-source voltage with integrated complementary transistor functionality. The part is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement continuity.

Substiute Parts

ZXMD63C02XTC

Diodes IncorporatedIn Stock: 937ZXMD63C02XTC Datasheet

Current PartRFQ

IRF7507TRPBF

Infineon TechnologiesIn Stock: 2269IRF7507TRPBF Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the ZXMD63C02XTC is determined by strict equivalence across the following critical parameters:

Voltage Rating: Drain-to-source voltage must equal 20V to maintain circuit protection margins and switching characteristics.

Channel Configuration: Dual N and P-Channel architecture is required to preserve the complementary switching functionality of the original design.

Gate Drive Compatibility: Logic level gate threshold specification (700mV @ 250µA) ensures compatibility with standard digital control signals.

Package Compatibility: 8-MSOP surface mount package with 0.118" (3.00mm) width maintains PCB layout and thermal management consistency.

Operating Temperature Range: -55°C to 150°C junction temperature range must be maintained for thermal design validation.

Regulatory Compliance: RoHS3 compliance and REACH unaffected status are mandatory for supply chain continuity.

The IRF7507TRPBF meets all substitution criteria while providing enhanced electrical performance characteristics within the allowed parameter envelope.

Parameter Comparison

Engineering Selection Recommendations

The IRF7507TRPBF is a direct functional substitute for the obsolete ZXMD63C02XTC based on electrical parameter equivalence and regulatory compliance alignment.

Voltage and Configuration Equivalence: Both devices operate at 20V drain-to-source voltage with identical N and P-Channel complementary configuration and logic level gate drive specification. Package geometry and surface mount characteristics are identical, enabling direct PCB layout compatibility.

Electrical Performance: The IRF7507TRPBF demonstrates equivalent on-resistance at the specified gate voltage and drain current (140mOhm versus 130mOhm), with enhanced maximum power dissipation (1.25W versus 1.04W). Gate charge and input capacitance values remain within acceptable design margins for switching frequency and control circuit compatibility.

Regulatory and Supply Status: Both parts maintain RoHS3 compliance, REACH unaffected status, and MSL Level 1 moisture sensitivity classification. The IRF7507TRPBF carries Last Time Buy status, providing extended procurement window compared to the obsolete ZXMD63C02XTC.

Thermal and Environmental Range: Operating temperature range (-55°C to 150°C junction temperature) is identical, ensuring thermal design validation remains unchanged.

Frequently Asked Questions (FAQ)

Q: Can the IRF7507TRPBF be used as a direct replacement for the ZXMD63C02XTC without PCB modifications?

A: Yes. Both devices share identical 8-MSOP package geometry (0.118" width, 3.00mm), pinout configuration, and surface mount characteristics. No PCB layout changes are required.

Q: Are the gate drive requirements identical between these two parts?

A: Yes. Both devices specify 700mV threshold voltage at 250µA drain current, confirming compatibility with standard logic level gate drive circuits operating at 3.3V or 5V.

Q: What is the significance of the on-resistance difference (130mOhm versus 140mOhm)?

A: The IRF7507TRPBF on-resistance is 10mOhm higher at the specified operating point (1.7A, 4.5V gate voltage). This represents a 7.7% increase in conduction loss. Circuit thermal analysis should confirm this difference remains within design margins.

Q: Does the higher maximum power rating (1.25W versus 1.04W) of the IRF7507TRPBF affect circuit design?

A: The higher power rating indicates improved thermal capability. This does not require circuit modifications but may provide additional thermal margin in power-limited applications.

Q: Are there any differences in gate charge that affect switching frequency performance?

A: Gate charge differs by 2nC (6nC versus 8nC at 4.5V). This represents a 33% increase and may slightly increase gate drive power consumption. Switching frequency performance remains compatible for standard applications.

Q: Is the input capacitance difference (350pF versus 260pF) significant for circuit design?

A: The IRF7507TRPBF exhibits 90pF lower input capacitance at 15V, which may reduce gate drive current requirements and improve switching speed. This represents an improvement over the original specification.

Q: What is the difference between Last Time Buy and Obsolete product status?

A: Obsolete status indicates the ZXMD63C02XTC is no longer manufactured or supported. Last Time Buy status for the IRF7507TRPBF indicates a defined final production date with extended procurement availability before discontinuation.

Q: Are moisture sensitivity and RoHS compliance identical?

A: Yes. Both parts are MSL Level 1 (unlimited moisture sensitivity) and RoHS3 compliant, ensuring identical handling and environmental requirements.