ZVP3306ASTOB MOSFET P-Channel 60V 160mA Equivalent & Substitute Parts

Part Overview

The ZVP3306ASTOB is a P-Channel MOSFET manufactured by Diodes Incorporated, rated for 60V drain-to-source voltage with 160mA continuous drain current at 25°C. This device features a through-hole E-Line (TO-92 compatible) package and is designed for general-purpose switching and amplification applications requiring P-channel enhancement-mode operation.

The ZVP3306ASTOB is classified as obsolete. Locating equivalent substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.

Substiute Parts

ZVP3306ASTOB

Diodes IncorporatedIn Stock: 896ZVP3306ASTOB Datasheet

Current PartRFQ

VP2106N3-G

Microchip TechnologyIn Stock: 5058VP2106N3-G Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the ZVP3306ASTOB is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

• FET Type: P-Channel (required match)
• Drain to Source Voltage (Vdss): 60V minimum (equal or greater rating acceptable)
• Gate-Source Threshold Voltage (Vgs(th)): 3.5V maximum @ 1mA (compatible range)
• Gate-Source Voltage (Vgs): ±20V maximum rating (compatible range)
• Operating Temperature Range: -55°C to 150°C (required match or extended range)

Mechanical Compatibility Criteria:

• Mounting Type: Through Hole (required match)
• Package / Case: TO-92-3 or E-Line-3 compatible footprints (required match)

Performance Enhancement Criteria:

• Continuous Drain Current (Id): 160mA minimum (equal or greater rating acceptable)
• Rds On (Max): 14 Ohm or lower (equal or better performance acceptable)
• Power Dissipation (Max): 625mW or greater (equal or better performance acceptable)

The VP2106N3-G meets all electrical and mechanical compatibility requirements while providing enhanced performance specifications in drain current, on-resistance, and power dissipation ratings.

Parameter Comparison

Engineering Selection Recommendations

VP2106N3-G as Primary Substitute:

The VP2106N3-G is the recommended substitute for the ZVP3306ASTOB based on the following engineering factors:

1. Product Status: The VP2106N3-G is classified as Active, ensuring ongoing availability and manufacturing support. The ZVP3306ASTOB is obsolete, making the VP2106N3-G the appropriate long-term solution.

2. Electrical Equivalence: Both devices share identical Vdss (60V), Vgs(th) (3.5V @ 1mA), Vgs maximum (±20V), and operating temperature range (-55°C to 150°C). These parameters ensure functional compatibility in existing circuit designs.

3. Performance Enhancement: The VP2106N3-G provides superior continuous drain current (250mA versus 160mA) and lower on-resistance (12 Ohm versus 14 Ohm), delivering improved performance margins without circuit modification.

4. Regulatory Compliance: Both devices maintain ROHS3 compliance and REACH unaffected status, satisfying environmental and regulatory requirements.

5. Package Compatibility: The TO-92-3 package of the VP2106N3-G is mechanically and electrically compatible with the E-Line-3 (TO-92 compatible) package of the ZVP3306ASTOB, enabling direct board-level substitution.

6. Supply Availability: The VP2106N3-G maintains substantial inventory (5025 pieces in stock), ensuring reliable procurement for production requirements.

Frequently Asked Questions (FAQ)

Q: Can the VP2106N3-G be used as a direct replacement for the ZVP3306ASTOB in existing designs?

A: Yes. The VP2106N3-G meets all electrical compatibility requirements (Vdss, Vgs(th), Vgs, operating temperature) and shares a compatible through-hole package footprint. The substitute provides equal or superior performance across all critical parameters.

Q: What are the key differences between these two P-Channel MOSFETs?

A: The VP2106N3-G provides higher continuous drain current (250mA versus 160mA), lower on-resistance (12 Ohm versus 14 Ohm), and greater power dissipation capability (1W versus 625mW). These represent performance improvements rather than incompatibilities.

Q: Are the package footprints identical?

A: The ZVP3306ASTOB uses an E-Line-3 (TO-92 compatible) package, while the VP2106N3-G uses a TO-92-3 (TO-226AA) package. These packages are mechanically and electrically compatible for through-hole PCB applications, enabling direct substitution without board redesign.

Q: Does the VP2106N3-G meet the same regulatory and compliance standards?

A: Yes. Both devices are ROHS3 compliant and REACH unaffected, satisfying equivalent environmental and regulatory requirements.

Q: Why is the VP2106N3-G recommended over the ZVP3306ASTOB?

A: The ZVP3306ASTOB is obsolete, while the VP2106N3-G is actively manufactured by Microchip Technology. Active production status ensures long-term availability, consistent quality, and supply chain reliability for ongoing applications.

Q: Will circuit performance improve with the VP2106N3-G substitution?

A: The VP2106N3-G delivers improved performance margins due to higher current rating and lower on-resistance. Existing circuits will operate within the same electrical specifications with enhanced performance headroom.

Q: Are there any thermal considerations when substituting these devices?

A: The VP2106N3-G has a higher power dissipation rating (1W versus 625mW), providing greater thermal margin. Both devices operate across the same temperature range (-55°C to 150°C), ensuring equivalent thermal performance in the specified operating environment.