ZVN3306ASTZ Equivalent & Substitute Parts

Part Overview

The ZVN3306ASTZ is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 60V drain-to-source voltage with 270mA continuous drain current at 25°C. This device is packaged in an E-Line (TO-92 compatible) through-hole configuration and is designed for general-purpose switching and amplification applications. The part is Active in product status with full RoHS3 compliance and unlimited moisture sensitivity rating.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining through-hole mounting compatibility and operating temperature specifications.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	270	mA
On-Resistance (Rds On) @ 500mA, 10V	5	Ohm
Gate-Source Threshold Voltage (Vgs(th)) @ 1mA	2.4	V
Power Dissipation (Max)	625	mW
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole	—
Package Type	E-Line-3 (TO-92 compatible)	—

Substitute Part Grouping Explanation

Substitution eligibility is determined by the following criteria:

Electrical Compatibility Requirements:

Drain-to-Source Voltage (Vdss) must equal or exceed 60V
Continuous Drain Current (Id) must meet or exceed 270mA at 25°C
On-Resistance (Rds On) at specified conditions must not exceed 5 Ohm
Gate-Source Threshold Voltage (Vgs(th)) must be compatible with 2.4V specification
Operating temperature range must encompass -55°C to 150°C

Mechanical Compatibility Requirements:

Mounting type must be Through Hole
Package must be TO-92-3 or E-Line-3 compatible configuration

Compliance Requirements:

RoHS3 compliance required
Active product status required

The substitute parts listed below satisfy all electrical parameters within the specified ranges while maintaining through-hole mounting compatibility and full regulatory compliance.

Parameter Comparison

Parameter	ZVN3306ASTZ (Main)	2N7000-D26Z	2N7000-D74Z	2N7000-D75Z	2N7000-G	VN2106N3-G
Manufacturer	Diodes Inc.	onsemi	onsemi	onsemi	Microchip	Microchip
Vdss (V)	60	60	60	60	60	60
Id @ 25°C (mA)	270	200	200	200	200	300
Rds On @ 500mA, 10V (Ohm)	5	5	5	5	5	4
Vgs(th) @ 1mA (V)	2.4	3	3	3	3	2.4
Vgs (Max) (V)	±20	±20	±20	±20	±30	±20
Ciss @ Vds (pF)	35 @ 18V	50 @ 25V	50 @ 25V	50 @ 25V	60 @ 25V	50 @ 25V
Power Dissipation (Max)	625 mW (Ta)	400 mW (Ta)	400 mW (Ta)	400 mW (Ta)	1 W (Tc)	1 W (Tc)
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package	E-Line-3	TO-92-3	TO-92-3	TO-92-3	TO-92-3	TO-92-3
RoHS3 Compliance	Yes	Yes	Yes	Yes	Yes	Yes
Product Status	Active	Active	Active	Active	Active	Active

Engineering Selection Recommendations

All listed substitute parts maintain Active product status and full RoHS3 compliance, ensuring regulatory continuity and long-term availability.

2N7000-D26Z, 2N7000-D74Z, 2N7000-D75Z (onsemi): These three parts are functionally equivalent to each other, all rated for 60V and 200mA continuous drain current. They feature identical electrical specifications including 5 Ohm on-resistance and 3V gate-source threshold voltage. These parts are suitable for applications where the 270mA rating of the ZVN3306ASTZ is not required. Inventory availability ranges from 3,200 to 14,893 units across the three variants.

2N7000-G (Microchip Technology): This part matches the 60V and 200mA specifications of the onsemi 2N7000 variants but offers higher power dissipation capability at 1W (Tc) compared to 400mW (Ta) for the onsemi devices. The gate-source maximum voltage is rated at ±30V, providing additional gate drive margin. This part is suitable for applications with moderate thermal requirements.

VN2106N3-G (Microchip Technology): This part provides the highest current capability among the substitutes at 300mA continuous drain current, exceeding the ZVN3306ASTZ specification of 270mA. It features superior on-resistance at 4 Ohm and matches the 2.4V gate-source threshold voltage of the main part. Power dissipation is rated at 1W (Tc). This part is the most direct functional equivalent to the ZVN3306ASTZ.

Frequently Asked Questions (FAQ)

Q: Can the 2N7000-D26Z, 2N7000-D74Z, or 2N7000-D75Z be used as direct replacements for the ZVN3306ASTZ?

A: These parts are electrically compatible for applications requiring up to 200mA continuous drain current. The ZVN3306ASTZ is rated for 270mA, so substitution is appropriate only when the actual circuit current requirement does not exceed 200mA. All three onsemi variants are functionally identical and differ only in packaging format (Cut Tape).

Q: What is the difference between the onsemi 2N7000 variants and the Microchip 2N7000-G?

A: The onsemi variants are rated for 400mW power dissipation at ambient temperature (Ta), while the Microchip 2N7000-G is rated for 1W at case temperature (Tc), providing higher thermal capability. The Microchip part also features ±30V maximum gate-source voltage compared to ±20V for the onsemi parts. Both are rated for 200mA continuous drain current.

Q: Is the VN2106N3-G a superior substitute to the ZVN3306ASTZ?

A: The VN2106N3-G exceeds the ZVN3306ASTZ specifications in several parameters: 300mA continuous drain current versus 270mA, 4 Ohm on-resistance versus 5 Ohm, and 1W power dissipation versus 625mW. It matches the 2.4V gate-source threshold voltage. This part provides enhanced performance margins and is suitable for direct substitution in all applications where the ZVN3306ASTZ is specified.

Q: Are all substitute parts compatible with the E-Line-3 package footprint?

A: The substitute parts are packaged in TO-92-3 configuration, which is mechanically compatible with E-Line-3 through-hole mounting. Both package types use three leads in a through-hole format with identical pin spacing and lead diameter specifications. Physical board layout compatibility is maintained.

Q: What compliance certifications apply to all listed parts?

A: All parts listed are RoHS3 compliant and REACH unaffected. All parts maintain Active product status. The ECCN classification is EAR99 for all parts, with HTSUS codes 8541.21.0095 or 8541.29.0095 depending on manufacturer.

Q: Which substitute part should be selected for maximum current capability?

A: The VN2106N3-G provides the highest continuous drain current rating at 300mA, exceeding the ZVN3306ASTZ specification of 270mA. This part is recommended for applications requiring maximum current headroom within the 60V voltage class.

Q: Can the 2N7000-G be used in high-temperature applications?

A: All listed parts, including the 2N7000-G, are rated for operating temperatures from -55°C to 150°C (Tj), matching the ZVN3306ASTZ specification. The 2N7000-G's higher power dissipation rating (1W at Tc) provides better thermal performance in sustained high-current applications.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message