ZTX696BSTZ Equivalent & Substitute Parts

Part Overview

The ZTX696BSTZ is an NPN bipolar junction transistor manufactured by Diodes Incorporated, designed for general-purpose switching and amplification applications. This through-hole component operates at collector voltages up to 180 V with a maximum collector current of 500 mA and dissipates up to 1 W of power. The device is packaged in an E-Line (TO-92 compatible) configuration with formed leads suitable for through-hole mounting.

The ZTX696BSTZ maintains Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating. Identifying equivalent substitute parts becomes necessary when the primary component experiences supply constraints, extended lead times, or when design requirements permit operation within the electrical and mechanical parameters of alternative devices.

Substiute Parts

ZTX696BSTZ

Diodes IncorporatedIn Stock: 17457ZTX696BSTZ Datasheet

Current PartRFQ

KSP43TA

onsemiIn Stock: 3087KSP43TA Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the ZTX696BSTZ with alternative NPN transistors is determined by the following critical parameters:

Electrical Compatibility Requirements:

• Transistor type must be NPN
• Collector current rating must equal or exceed 500 mA
• Collector-Emitter breakdown voltage must equal or exceed 180 V
• Power dissipation capability must support the application requirements
• DC current gain (hFE) characteristics must be compatible with circuit biasing

Mechanical Compatibility Requirements:

• Mounting type must be through-hole
• Package must be physically compatible with TO-92 or equivalent three-lead configurations
• Lead formation and spacing must accommodate existing PCB layouts

Compliance and Regulatory Requirements:

• RoHS3 compliance status must be maintained
• REACH compliance status must be maintained
• ECCN classification must remain consistent

The KSP43TA from onsemi satisfies these substitution criteria within the defined parameter boundaries.

Parameter Comparison

Engineering Selection Recommendations

The KSP43TA serves as a qualified substitute for the ZTX696BSTZ based on the following engineering criteria:

Electrical Sufficiency: Both devices share identical maximum collector current ratings of 500 mA. The KSP43TA provides a higher collector-emitter breakdown voltage of 200 V compared to the ZTX696BSTZ at 180 V, ensuring adequate voltage margin in applications operating near the primary component's maximum rating. The KSP43TA's maximum power dissipation of 625 mW is lower than the ZTX696BSTZ at 1 W; therefore, applications requiring sustained power dissipation above 625 mW must remain with the primary component.

Mechanical Compatibility: Both components utilize through-hole mounting with TO-92 compatible three-lead packages. Physical pin spacing and lead formation are compatible, permitting direct PCB layout substitution without modification.

Regulatory and Compliance Status: Both the ZTX696BSTZ and KSP43TA maintain ROHS3 compliance and REACH unaffected status, satisfying regulatory requirements for equivalent substitution in compliant applications.

Temperature Operating Range: The ZTX696BSTZ supports operation to +200°C junction temperature, while the KSP43TA is rated to +150°C. Applications requiring operation above +150°C must retain the primary component.

Frequently Asked Questions (FAQ)

Q: Can the KSP43TA directly replace the ZTX696BSTZ in all applications?

A: The KSP43TA is electrically and mechanically compatible for applications where power dissipation does not exceed 625 mW and operating temperature remains below +150°C. Applications exceeding these limits require the ZTX696BSTZ.

Q: What is the primary difference between these two transistors?

A: The ZTX696BSTZ provides higher maximum power dissipation (1 W versus 0.625 W) and extended operating temperature range (−55 to +200°C versus −55 to +150°C). The KSP43TA offers a higher collector-emitter breakdown voltage (200 V versus 180 V).

Q: Are the packages physically identical?

A: Both devices use three-lead through-hole packages compatible with TO-92 configurations. The ZTX696BSTZ is designated E-Line (TO-92 compatible), while the KSP43TA is designated TO-92-3. These packages are mechanically interchangeable for PCB mounting purposes.

Q: Do both parts meet the same regulatory standards?

A: Yes. Both the ZTX696BSTZ and KSP43TA are ROHS3 compliant and REACH unaffected, satisfying equivalent regulatory requirements.

Q: What collector current ratings do these transistors support?

A: Both transistors support a maximum collector current of 500 mA, providing identical current handling capability.

Q: Which transistor should be selected for high-temperature applications?

A: The ZTX696BSTZ supports operation to +200°C junction temperature and is the appropriate choice for applications requiring sustained operation above +150°C.

Q: How do the DC current gain characteristics compare?

A: The ZTX696BSTZ specifies a minimum DC current gain (hFE) of 150 at 200 mA collector current and 5 V collector-emitter voltage. The KSP43TA specifies a minimum DC current gain of 40 at 30 mA collector current and 10 V collector-emitter voltage. Circuit biasing calculations must account for these different gain specifications.