ZTX696BSTOB Equivalent & Substitute Parts

Part Overview

The ZTX696BSTOB is an NPN bipolar junction transistor manufactured by Diodes Incorporated, designed for general-purpose switching and amplification applications. This device features a 180 V collector-emitter breakdown voltage rating, 500 mA maximum collector current, and 1 W power dissipation capability in a through-hole E-Line (TO-92 compatible) package.

The ZTX696BSTOB is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity and ensure component availability for production, repair, and maintenance applications. Substitute parts must maintain electrical and mechanical compatibility within the specified parameter ranges.

Substiute Parts

ZTX696BSTOB

Diodes IncorporatedIn Stock: 999ZTX696BSTOB Datasheet

Current PartRFQ

ZTX696BSTZ

Diodes IncorporatedIn Stock: 17457ZTX696BSTZ Datasheet

DirectRFQ

KSP43TA

onsemiIn Stock: 3087KSP43TA Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the ZTX696BSTOB are selected based on strict electrical and mechanical parameter compatibility. The following criteria determine substitution eligibility:

Primary Electrical Parameters:

• Transistor type must be NPN
• Collector current rating must be equal to or greater than 500 mA
• Collector-emitter breakdown voltage must be equal to or greater than 180 V
• Power dissipation must be equal to or greater than 1 W
• Transition frequency must be equal to or greater than 70 MHz

Mechanical Parameters:

• Mounting type must be through-hole
• Package must be compatible with E-Line-3 or TO-92-3 form factor

Compliance Requirements:

• RoHS3 compliance required
• REACH unaffected status required

Substitute parts are grouped into two categories: direct manufacturer equivalents from Diodes Incorporated and cross-manufacturer alternatives that meet all electrical and mechanical specifications.

Parameter Comparison

Engineering Selection Recommendations

ZTX696BSTZ (Direct Manufacturer Equivalent)

The ZTX696BSTZ is the primary substitute for the obsolete ZTX696BSTOB. Both parts are manufactured by Diodes Incorporated and share identical electrical specifications across all critical parameters: 500 mA collector current, 180 V breakdown voltage, 1 W power rating, 70 MHz transition frequency, and -55°C to 200°C operating temperature range. The ZTX696BSTZ maintains active product status with significantly higher inventory availability (17,400 units in stock versus 973 units for the main part). Both parts are ROHS3 compliant and REACH unaffected. The only difference is packaging format: ZTX696BSTOB uses standard through-hole packaging while ZTX696BSTZ is supplied in Tape & Box format. This substitute provides direct functional and mechanical compatibility with no design modifications required.

KSP43TA (Cross-Manufacturer Alternative)

The KSP43TA, manufactured by onsemi, is a cross-manufacturer substitute that meets the core electrical requirements for NPN transistor applications. This part maintains 500 mA collector current and 100 nA collector cutoff current specifications. The KSP43TA provides a higher collector-emitter breakdown voltage rating of 200 V, exceeding the 180 V requirement. However, the following parameter differences require evaluation for specific applications:

• Transition frequency is 50 MHz (versus 70 MHz for ZTX696BSTOB)
• Maximum power dissipation is 625 mW (versus 1 W for ZTX696BSTOB)
• DC current gain is 40 @ 30mA, 10V (versus 150 @ 200mA, 5V for ZTX696BSTOB)
• Vce saturation is 500mV @ 2mA, 20mA (versus 250mV @ 5mA, 200mA for ZTX696BSTOB)
• Maximum operating temperature is 150°C (versus 200°C for ZTX696BSTOB)

The KSP43TA is ROHS3 compliant and REACH unaffected. This substitute is suitable for applications where the reduced frequency response, lower power dissipation, and lower maximum operating temperature do not conflict with circuit requirements.

Frequently Asked Questions (FAQ)

Q: Can ZTX696BSTZ be used as a direct replacement for ZTX696BSTOB?

A: Yes. The ZTX696BSTZ is a direct electrical and mechanical equivalent. Both parts share identical transistor type (NPN), collector current (500 mA), breakdown voltage (180 V), power rating (1 W), transition frequency (70 MHz), and operating temperature range (-55°C to 200°C). The only difference is packaging format. ZTX696BSTZ is the recommended substitute due to active product status and higher inventory availability.

Q: What are the limitations of using KSP43TA as a substitute?

A: The KSP43TA has three parameter limitations compared to ZTX696BSTOB: transition frequency is 50 MHz instead of 70 MHz, maximum power dissipation is 625 mW instead of 1 W, and maximum operating temperature is 150°C instead of 200°C. Applications requiring high-frequency switching, high power dissipation, or operation above 150°C require evaluation to confirm KSP43TA suitability. The KSP43TA is suitable for general-purpose switching applications within these parameter constraints.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. Both ZTX696BSTZ and KSP43TA are ROHS3 compliant and REACH unaffected, matching the compliance status of the main part ZTX696BSTOB.

Q: What is the difference between E-Line and TO-92 packaging?

A: E-Line-3 and TO-92-3 are compatible through-hole package formats for three-lead transistors. Both packages use formed leads and are mechanically and electrically interchangeable in standard through-hole PCB applications. The ZTX696BSTOB and ZTX696BSTZ use E-Line-3 packaging, while KSP43TA uses TO-92-3 packaging. Both formats fit standard TO-92 footprints.

Q: Why is ZTX696BSTOB marked as obsolete?

A: The ZTX696BSTOB is classified as obsolete by the manufacturer. The active equivalent ZTX696BSTZ should be used for new designs and ongoing production. Existing inventory of ZTX696BSTOB remains available (973 units in stock), but long-term availability cannot be guaranteed.

Q: Can I use KSP43TA in high-temperature applications?

A: The KSP43TA has a maximum operating temperature of 150°C, which is lower than the ZTX696BSTOB specification of 200°C. Applications requiring operation above 150°C must use ZTX696BSTZ or evaluate alternative parts with higher temperature ratings.

Q: What is the difference in DC current gain between the substitute parts?

A: ZTX696BSTOB and ZTX696BSTZ both specify a minimum DC current gain (hFE) of 150 @ 200mA, 5V. The KSP43TA specifies a minimum hFE of 40 @ 30mA, 10V. The higher current gain of the Diodes Incorporated parts may provide better switching performance in certain circuit configurations. Applications sensitive to current gain variation require circuit analysis to confirm KSP43TA compatibility.