ZTX658 Equivalent & Substitute Parts

Part Overview

The ZTX658 is an NPN bipolar junction transistor manufactured by Diodes Incorporated, rated for 400 V collector-emitter breakdown voltage and 500 mA maximum collector current. This device is packaged in an E-Line (TO-92 compatible) configuration and is designed for through-hole mounting applications. The ZTX658 maintains Active product status with 1457 units currently in stock.

Substitute parts become necessary when the ZTX658 reaches end-of-life status, when inventory becomes unavailable, or when alternative packaging or lead configurations are required for specific manufacturing processes. The parts listed below provide functional equivalence within defined electrical and mechanical parameter ranges.

Substiute Parts

ZTX658
Diodes IncorporatedIn Stock: 1566ZTX658 Datasheet
ZTX658
Current Part
2N6517BU
onsemiIn Stock: 202202N6517BU Datasheet
2N6517BU
MFR Recommended
2N6517TA
onsemiIn Stock: 82142N6517TA Datasheet
2N6517TA
MFR Recommended
KSP42BU
onsemiIn Stock: 105225KSP42BU Datasheet
KSP42BU
MFR Recommended
MPSA42
Diotec SemiconductorIn Stock: 27040MPSA42 Datasheet
MPSA42
MFR Recommended

Key Parameters

Parameter ZTX658 Specification
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 400 V
Current - Collector (Ic) (Max) 500 mA
Power - Max 1 W
Frequency - Transition 50 MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 100mA, 5V
Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Operating Temperature Range -55°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case E-Line-3 (TO-92 compatible)
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the ZTX658 is determined by the following critical parameters:

Electrical Compatibility Requirements:

  • Transistor Type: NPN (mandatory match)
  • Collector-Emitter Breakdown Voltage: Substitute must equal or exceed 400 V
  • Maximum Collector Current: Must equal or exceed 500 mA
  • Maximum Power Dissipation: Must equal or exceed 1 W
  • Transition Frequency: Must equal or exceed 50 MHz
  • DC Current Gain (hFE): Must meet or exceed minimum specification at rated conditions

Mechanical Compatibility Requirements:

  • Mounting Type: Through Hole (mandatory match)
  • Package Configuration: TO-92 or TO-92-3 compatible pinout

Regulatory Compliance:

  • RoHS3 Compliance required
  • REACH Unaffected status required

The substitute parts listed below meet these criteria with the following considerations:

  • 2N6517BU and 2N6517TA: Rated for 350 V (below ZTX658 400 V specification). These parts are suitable for applications where the actual operating voltage does not exceed 350 V.
  • KSP42BU: Rated for 300 V (below ZTX658 400 V specification). Suitable for applications with maximum operating voltages of 300 V or less.
  • MPSA42: Rated for 300 V (below ZTX658 400 V specification). Suitable for applications with maximum operating voltages of 300 V or less.

Parameter Comparison

Parameter ZTX658 2N6517BU 2N6517TA KSP42BU MPSA42
Manufacturer Diodes Incorporated onsemi onsemi onsemi Diotec Semiconductor
Transistor Type NPN NPN NPN NPN NPN
Voltage - Collector Emitter Breakdown (Max) 400 V 350 V 350 V 300 V 300 V
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA 500 mA 500 mA
Power - Max 1 W 625 mW 625 mW 625 mW 625 mW
Frequency - Transition 50 MHz 200 MHz 200 MHz 50 MHz 50 MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 100mA, 5V 20 @ 50mA, 10V 20 @ 50mA, 10V 40 @ 30mA, 10V 40 @ 30mA, 10V
Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 100mA 1V @ 5mA, 50mA 1V @ 5mA, 50mA 500mV @ 2mA, 20mA 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max) 100nA (ICBO) 50nA (ICBO) 50nA (ICBO) 100nA (ICBO) 100nA (ICBO)
Operating Temperature Range -55°C ~ 200°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case E-Line-3 (TO-92 compatible) TO-92-3 (TO-226AA) TO-92-3 (TO-226AA) TO-92-3 (TO-226AA) TO-92-3 (TO-226AA)
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant Not applicable
Product Status Active Last Time Buy Active Active Active

Engineering Selection Recommendations

Primary Substitutes (Recommended for Active Designs):

2N6517TA (onsemi, Active status): This part is the preferred substitute when the application voltage requirement does not exceed 350 V. The 2N6517TA is supplied in Cut Tape (CT) packaging with formed leads, suitable for automated assembly processes. It maintains ROHS3 compliance and Active product status, ensuring long-term availability. The higher transition frequency (200 MHz) provides performance margin beyond the ZTX658 specification.

KSP42BU (onsemi, Active status): This part is suitable for applications with maximum operating voltages of 300 V or less. The KSP42BU offers the highest inventory availability (105,200 units) among substitute options and maintains Active product status. It provides equivalent saturation voltage characteristics to the ZTX658 and maintains ROHS3 compliance.

Secondary Substitutes (Limited Availability):

2N6517BU (onsemi, Last Time Buy status): This part carries Last Time Buy status, indicating limited future availability. Use only when 2N6517TA is unavailable and application voltage does not exceed 350 V.

MPSA42 (Diotec Semiconductor, Active status): This part is suitable for applications with maximum operating voltages of 300 V or less. RoHS status is listed as Not applicable. The operating temperature range extends to -55°C, matching the ZTX658 lower temperature limit.

Voltage Derating Consideration:

All listed substitutes operate at reduced maximum collector-emitter breakdown voltages compared to the ZTX658. Selection must be based on actual circuit operating voltage requirements. Applications requiring the full 400 V rating of the ZTX658 cannot use any of the listed substitutes.

Frequently Asked Questions (FAQ)

Q: Can the 2N6517BU or 2N6517TA be used as direct replacements for the ZTX658?

A: These parts are functionally equivalent for applications where the maximum operating voltage does not exceed 350 V. Both maintain the same 500 mA collector current rating and through-hole TO-92-3 package configuration. However, they are not suitable for circuits requiring the full 400 V breakdown voltage specification of the ZTX658.

Q: What is the difference between 2N6517BU and 2N6517TA?

A: Both parts are manufactured by onsemi with identical electrical specifications (350 V, 500 mA, 200 MHz). The primary difference is packaging: 2N6517BU is supplied in Bulk packaging, while 2N6517TA is supplied in Cut Tape (CT) with formed leads. The 2N6517TA is preferred for automated assembly processes. Additionally, 2N6517TA maintains Active product status, while 2N6517BU is Last Time Buy.

Q: Can KSP42BU or MPSA42 be used in place of the ZTX658?

A: These parts are suitable only for applications with maximum operating voltages of 300 V or less. Both maintain the 500 mA collector current rating and TO-92-3 package configuration. They are not suitable for circuits requiring voltages above 300 V.

Q: What are the key electrical differences between the ZTX658 and its substitutes?

A: The primary differences are: (1) Collector-emitter breakdown voltage: ZTX658 is 400 V, while substitutes range from 300 V to 350 V; (2) Maximum power dissipation: ZTX658 is 1 W, while substitutes are 625 mW; (3) DC current gain: ZTX658 minimum is 50 @ 100mA, 5V, while substitutes range from 20 to 40 at different test conditions; (4) Operating temperature: ZTX658 extends to 200°C, while substitutes maximum is 150°C.

Q: Are all substitute parts RoHS3 compliant?

A: The 2N6517BU, 2N6517TA, and KSP42BU are ROHS3 compliant. The MPSA42 has RoHS status listed as Not applicable. Verify RoHS compliance requirements for your specific application before selection.

Q: Which substitute offers the best long-term availability?

A: The 2N6517TA (onsemi) maintains Active product status and is the recommended choice for new designs. The KSP42BU also maintains Active status with the highest current inventory level (105,200 units). The 2N6517BU carries Last Time Buy status and should be avoided for new designs.

Q: Can the ZTX658 be used in applications designed for the substitute parts?

A: Yes. The ZTX658 can be used in any application designed for the listed substitutes due to its higher voltage rating (400 V) and greater power dissipation capability (1 W). However, the ZTX658 may not be cost-effective for applications requiring only 300 V or 350 V operation.

Q: What is the significance of the E-Line package versus TO-92-3?

A: The ZTX658 uses an E-Line-3 package (TO-92 compatible), while substitutes use TO-92-3 (TO-226AA) packages. Both are through-hole configurations with compatible pinouts. The physical dimensions and lead spacing are equivalent, allowing direct board-level substitution without layout modifications.

Q: How do the transition frequencies compare?

A: The ZTX658 and KSP42BU/MPSA42 are rated at 50 MHz, while the 2N6517BU and 2N6517TA are rated at 200 MHz. The higher transition frequency of the 2N6517 series provides additional performance margin for high-frequency applications but is not required for circuits designed around the 50 MHz specification.

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