ZDX050N50 Equivalent & Substitute Parts Reference

Part Overview

The Rohm Semiconductor ZDX050N50 is an N-Channel MOSFET designed for power switching applications, featuring a 500 V drain-to-source voltage and 5A continuous drain current in a TO-220FM through-hole package. The product status is "Not For New Designs." Alternative models are necessary for ongoing designs due to product lifecycle status and to ensure continued availability and compliance with current regulations.

Substiute Parts

ZDX050N50

Rohm SemiconductorIn Stock: 1213ZDX050N50 Datasheet

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TK5A50D(STA4,Q,M)

Toshiba Semiconductor and StorageIn Stock: 12351TK5A50D(STA4,Q,M) Datasheet

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TK6A45DA(STA4,Q,M)

Toshiba Semiconductor and StorageIn Stock: 756TK6A45DA(STA4,Q,M) Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution is determined by strict matching of the following key parameters: FET type (N-Channel), drain-to-source voltage rating (Vdss), continuous drain current rating (Id), Rds(on), gate threshold voltage (Vgs(th)), maximum gate-source voltage (Vgs Max), gate charge (Qg), input capacitance (Ciss), power dissipation, mounting style, and package compatibility. Substitutes must also meet the same RoHS and MSL requirements.

Key parameters for substitution:

• FET Type
• Technology
• Drain to Source Voltage (Vdss)
• Continuous Drain Current (Id) @ 25°C
• Drive Voltage (for Rds On)
• Rds On (Max) @ Id, Vgs
• Vgs(th) (Max) @ Id
• Vgs (Max)
• Gate Charge (Qg) (Max) @ Vgs
• Input Capacitance (Ciss) (Max) @ Vds
• Power Dissipation (Max)
• Operating Temperature
• Mounting Type
• Package / Case
• RoHS Status
• MSL

Parameter Comparison

Engineering Selection Recommendations

The ZDX050N50 is categorized as "Not For New Designs," indicating that alternatives with similar or improved compliance, RoHS3 certification, and MSL 1 rating should be selected for new or ongoing designs. Substitute parts listed offer equivalent certifications and environmental compliance per the provided specifications.

Frequently Asked Questions (FAQ)

Q1: What electrical parameters are critical for substituting the ZDX050N50 MOSFET?
A1: The key parameters are FET type, drain-to-source voltage (Vdss), continuous drain current (Id), Rds(on), gate threshold voltage (Vgs(th)), maximum gate-source voltage (Vgs Max), gate charge (Qg), and input capacitance (Ciss).

Q2: Are the listed substitute parts pin-compatible and mechanically suitable?
A2: All listed substitutes use the TO-220-3 Full Pack through-hole package, matching the mechanical and footprint requirements of the ZDX050N50.

Q3: How does RoHS and MSL affect substitute acceptance?
A3: All listed substitutes are RoHS3 compliant and have a moisture sensitivity level (MSL) of 1, matching the regulatory and storage requirements.

Q4: Does the substitute list guarantee identical performance?
A4: Substitutes are based strictly on provided matching key parameters. For additional requirements, consult the provided specifications.

Q5: Why is it necessary to avoid "Not For New Designs" components?
A5: Components marked as "Not For New Designs" indicate the manufacturer does not recommend their use in future or updated designs. Selecting active components with matching parameters ensures continued supply and support.