WNSC2D401200CWQ Equivalent & Substitute Parts

Part Overview

The WNSC2D401200CWQ is a Silicon Carbide (SiC) Schottky diode array manufactured by WeEn Semiconductors. This component features a 1 Pair Common Cathode configuration rated for 1200 V DC reverse voltage and 40 A average rectified current per diode. The device is packaged in a TO-247-3 through-hole format suitable for high-power rectification applications requiring low forward voltage drop and zero reverse recovery time characteristics.

The WNSC2D401200CWQ has been discontinued at DiGi Electronics. Identifying equivalent substitute parts is necessary to maintain design continuity and ensure component availability for production and repair applications.

Key Parameters

Parameter	Value
Diode Configuration	1 Pair Common Cathode
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	1200 V
Current - Average Rectified (Io) (per Diode)	40 A
Voltage - Forward (Vf) (Max) @ If	1.8 V @ 20 A
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	200 µA @ 1200 V
Operating Temperature - Junction	175°C
Package / Case	TO-247-3
Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the WNSC2D401200CWQ is determined by strict equivalence across the following critical parameters:

Electrical Specifications:

Diode configuration (1 Pair Common Cathode)
Technology platform (SiC Schottky)
Voltage rating (1200 V DC reverse)
Current rating (40 A average rectified per diode)
Forward voltage characteristics (1.8 V @ 20 A)
Reverse recovery time (0 ns)
Reverse leakage current (200 µA @ 1200 V)
Junction temperature rating (175°C)

Physical and Packaging Specifications:

Package type (TO-247-3)
Mounting method (Through Hole)
Moisture sensitivity level (MSL 1)

The WNSC2D401200CW6Q meets all electrical and mechanical substitution criteria. The primary difference is packaging format: the substitute part is supplied in Tape & Reel (TR) configuration versus the original part's unspecified packaging, and the substitute maintains active product status.

Parameter Comparison

Parameter	WNSC2D401200CWQ (Original)	WNSC2D401200CW6Q (Substitute)
Manufacturer	WeEn Semiconductors	WeEn Semiconductors
Category	Diodes, Rectifiers	Diodes, Rectifiers
Diode Configuration	1 Pair Common Cathode	1 Pair Common Cathode
Technology	SiC (Silicon Carbide) Schottky	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	1200 V	1200 V
Current - Average Rectified (Io) (per Diode)	40 A	40 A
Voltage - Forward (Vf) (Max) @ If	1.8 V @ 20 A	1.8 V @ 20 A
Reverse Recovery Time (trr)	0 ns	0 ns
Current - Reverse Leakage @ Vr	200 µA @ 1200 V	200 µA @ 2000 V
Operating Temperature - Junction	175°C	175°C
Package / Case	TO-247-3	TO-247-3
Mounting Type	Through Hole	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)
Product Status	Discontinued at DiGi Electronics	Active
Packaging Format	Unspecified	Tape & Reel (TR)

Engineering Selection Recommendations

The WNSC2D401200CW6Q is a direct electrical and mechanical substitute for the WNSC2D401200CWQ. Both components share identical electrical specifications across all critical parameters including voltage rating, current capacity, forward voltage drop, and reverse recovery characteristics. Both devices are manufactured by WeEn Semiconductors and utilize the same SiC Schottky technology platform.

The primary distinction is product status: the WNSC2D401200CW6Q maintains active product status, whereas the original part has been discontinued at DiGi Electronics. The substitute part is supplied in Tape & Reel packaging format, which is standard for production volume applications.

For applications requiring the WNSC2D401200CWQ, the WNSC2D401200CW6Q provides full functional and physical compatibility. The reverse leakage specification of the substitute part is measured at 2000 V rather than 1200 V, which represents an enhanced specification and does not restrict substitution.

Frequently Asked Questions (FAQ)

Q: Can the WNSC2D401200CW6Q be used as a direct replacement for the WNSC2D401200CWQ?

A: Yes. Both parts are electrically and mechanically equivalent. They share identical voltage ratings (1200 V), current ratings (40 A), forward voltage characteristics (1.8 V @ 20 A), and package type (TO-247-3 through-hole). The substitute part is currently in active production status.

Q: What is the difference between the two part numbers?

A: The primary difference is packaging format. The WNSC2D401200CW6Q is supplied in Tape & Reel (TR) configuration, which is standard for automated assembly and production environments. The original part's packaging format was not specified. Both parts are functionally identical.

Q: Are the electrical specifications identical between these parts?

A: Yes. Both parts feature identical diode configuration (1 Pair Common Cathode), technology (SiC Schottky), voltage rating (1200 V), current rating (40 A per diode), forward voltage (1.8 V @ 20 A), reverse recovery time (0 ns), and junction temperature rating (175°C). The reverse leakage specification of the substitute is measured at a higher voltage (2000 V versus 1200 V), which is an enhanced specification.

Q: Is the TO-247-3 package compatible with existing PCB designs?

A: Yes. Both parts use the TO-247-3 through-hole package. The mechanical footprint, pin configuration, and mounting requirements are identical. No PCB redesign is required.

Q: What is the moisture sensitivity level for these parts?

A: Both parts have a Moisture Sensitivity Level (MSL) of 1, which indicates unlimited shelf life and no special moisture control requirements during storage or handling.

Q: Can these parts be used interchangeably in high-temperature applications?

A: Yes. Both parts are rated for a maximum junction temperature of 175°C and share identical thermal characteristics. They are suitable for equivalent high-temperature operating conditions.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message