Equivalent & Substitute Parts Reference: WNSC201200WQ

Part Overview

The WeEn Semiconductors WNSC201200WQ is a Silicon Carbide (SiC) Schottky diode designed for high-voltage, high-current applications. It provides a maximum reverse voltage of 1200 V and an average rectified current of 20A in a TO-247-2 through-hole package. This component is currently marked as "Obsolete," making it necessary to identify alternatives for new designs or replacement purposes.

Key Parameters

Parameter	Main Part: WNSC201200WQ
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	1200 V
Current - Average Rectified (Io)	20A
Voltage - Forward (Vf) (Max) @ If	1.6 V @ 20 A
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	220 µA @ 1200 V
Capacitance @ Vr, F	1020pF @ 1V, 1MHz
Mounting Type	Through Hole
Package / Case	TO-247-2
Operating Temperature - Junction (Max)	175°C
RoHS Status	RoHS Compliant
Inventory Status	Obsolete

Substitute Part Grouping Explanation

Substitute parts are determined by direct equivalence or close matching across the following critical parameters: semiconductor technology (SiC Schottky), maximum reverse voltage (Vr), average rectified current (Io), forward voltage at rated current (Vf @ If), reverse recovery time (trr), reverse leakage current (@ Vr), junction capacitance, mounting type, package/case, and maximum junction temperature. Mechanical compatibility and compliance status also constitute essential substitution criteria as outlined.

Parameter Comparison

Parameter	Main Part: WNSC201200WQ	Substitute: WNSC2D201200W6Q
Technology	SiC (Silicon Carbide) Schottky	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	1200 V	1200 V
Current - Average Rectified (Io)	20A	20A
Voltage - Forward (Vf) (Max) @ If	1.6 V @ 20 A	1.8 V @ 20 A
Reverse Recovery Time (trr)	0 ns	0 ns
Current - Reverse Leakage @ Vr	220 µA @ 1200 V	200 µA @ 1200 V
Capacitance @ Vr, F	1020pF @ 1V, 1MHz	845pF @ 1V, 1MHz
Mounting Type	Through Hole	Through Hole
Package / Case	TO-247-2	TO-247-2
Operating Temperature - Junction (Max)	175°C	175°C
RoHS Status	RoHS Compliant	RoHS Compliant

Engineering Selection Recommendations

The WNSC201200WQ is classified as "Obsolete," while the substitute WNSC2D201200W6Q is "Active," making it suitable for ongoing production or replacement needs. Both components are RoHS compliant, support identical mounting and package formats, and fall under unrestricted ECCN (EAR99). Only the parameters explicitly listed are incorporated into the substitution logic.

Frequently Asked Questions (FAQ)

Q1: What determines direct substitutability for WNSC201200WQ?
A1: Substitutability is determined by matching semiconductor technology, voltage and current ratings, forward voltage, reverse recovery time, reverse leakage, capacitance, mounting type, package/case, maximum junction temperature, and RoHS compliance.

Q2: Is the TO-247-2 package critical for compatible substitution?
A2: Yes. Both the main part and the substitute utilize the TO-247-2 package and through-hole mounting, ensuring mechanical and assembly compatibility.

Q3: Does the RoHS compliance status affect selection?
A3: Both original and substitute models are RoHS compliant, aligning with environmental and legislative requirements.

Q4: Are there differences in electrical performance parameters that affect substitution?
A4: All core electrical parameters provided are within application equivalence range as explicitly specified.

Q5: Is operating temperature identical between the main and substitute parts?
A5: Both parts specify a maximum junction operating temperature of 175°C.

Q6: What inventory status considerations apply?
A6: The main part WNSC201200WQ is obsolete. The substitute WNSC2D201200W6Q is active and available for ongoing use.

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