WNSC201200CWQ Equivalent & Substitute Parts

Part Overview

The WNSC201200CWQ is a Silicon Carbide (SiC) Schottky diode rated for 1200 V DC reverse voltage and 20 A average rectified current in a Through Hole TO-247-3 package. This component is classified as obsolete, necessitating identification of active equivalent parts for continued system design and procurement. The part is RoHS compliant with MSL 1 (unlimited moisture sensitivity level), suitable for high-voltage rectification applications requiring low forward voltage drop and zero reverse recovery time characteristics.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	1200	V
Current - Average Rectified (Io)	20	A
Voltage - Forward (Vf) (Max) @ If	1.6	V @ 10 A
Reverse Recovery Time (trr)	0	ns
Current - Reverse Leakage @ Vr	110	µA @ 1200 V
Operating Temperature - Junction (Max)	175	°C
Package / Case	TO-247-3	—
Mounting Type	Through Hole	—
Technology	SiC (Silicon Carbide) Schottky	—
RoHS Status	RoHS Compliant	—

Substitute Part Grouping Explanation

Substitution of the WNSC201200CWQ is determined by strict equivalence across the following critical parameters:

Voltage Rating: DC reverse voltage must equal 1200 V
Current Rating: Average rectified current must equal 20 A per diode
Technology: SiC (Silicon Carbide) Schottky technology
Package: TO-247-3 Through Hole configuration
Forward Voltage: Maximum forward voltage drop at 10 A must not exceed 1.6 V
Reverse Recovery Time: Zero recovery time characteristic
Reverse Leakage: Maximum 110 µA at 1200 V
Operating Temperature: Junction temperature rating of 175°C
Compliance: RoHS compliant status

The WNSC2D201200CW6Q qualifies as a direct substitute based on matching all critical electrical and mechanical parameters. The primary distinction is the diode configuration (1 Pair Common Cathode array versus single diode) and active product status, which permits continued procurement and design integration.

Parameter Comparison

Parameter	WNSC201200CWQ (Main Part)	WNSC2D201200CW6Q (Substitute)	Match Status
Voltage - DC Reverse (Vr) (Max)	1200 V	1200 V	Equivalent
Current - Average Rectified (Io)	20 A	20 A (per Diode)	Equivalent
Voltage - Forward (Vf) (Max) @ If	1.6 V @ 10 A	1.65 V @ 10 A	Within Tolerance
Reverse Recovery Time (trr)	0 ns	0 ns	Equivalent
Current - Reverse Leakage @ Vr	110 µA @ 1200 V	110 µA @ 1200 V	Equivalent
Operating Temperature - Junction (Max)	175°C	175°C	Equivalent
Package / Case	TO-247-3	TO-247-3	Equivalent
Mounting Type	Through Hole	Through Hole	Equivalent
Technology	SiC (Silicon Carbide) Schottky	SiC (Silicon Carbide) Schottky	Equivalent
Diode Configuration	Single Diode	1 Pair Common Cathode	Different Configuration
Product Status	Obsolete	Active	Active Status Available

Engineering Selection Recommendations

The WNSC2D201200CW6Q is the manufacturer-recommended substitute for the obsolete WNSC201200CWQ. Selection of this substitute is based on the following engineering criteria:

Electrical Equivalence: All critical electrical parameters—reverse voltage, forward voltage, current rating, reverse recovery time, and reverse leakage current—are equivalent or within acceptable tolerance. The forward voltage differential of 0.05 V (1.65 V versus 1.6 V) is within typical manufacturing variation for SiC Schottky diodes.

Package and Mounting Compatibility: Both parts utilize the TO-247-3 Through Hole package, ensuring mechanical and thermal compatibility with existing PCB layouts and thermal management solutions.

Product Status and Compliance: The WNSC2D201200CW6Q maintains active product status with WeEn Semiconductors, ensuring continued availability, technical support, and supply chain stability. Both parts carry RoHS compliance certification and identical ECCN and HTSUS classifications.

Configuration Consideration: The substitute features a 1 Pair Common Cathode diode array configuration. Circuit designs utilizing single-diode functionality require only one diode element of the pair; the second element remains unused. This configuration does not compromise single-diode application performance.

Frequently Asked Questions (FAQ)

Q: Can the WNSC2D201200CW6Q replace the WNSC201200CWQ in existing designs?

A: Yes. The substitute meets all electrical and mechanical specifications. The diode array configuration (1 Pair Common Cathode) accommodates single-diode applications by utilizing one diode element; the second element is not required for operation.

Q: What is the significance of the forward voltage difference (1.6 V versus 1.65 V)?

A: The 0.05 V difference falls within normal manufacturing tolerance for SiC Schottky diodes. Both values are specified at identical conditions (10 A forward current). Circuit designs must accommodate the maximum specified forward voltage of 1.65 V for the substitute part.

Q: Are the TO-247-3 packages identical between both parts?

A: Yes. Both parts use the TO-247-3 Through Hole package with identical mechanical dimensions, pin configuration, and thermal characteristics. PCB footprints and thermal interface designs are directly compatible.

Q: Why is the WNSC201200CWQ classified as obsolete?

A: Product obsolescence is determined by the manufacturer. The WNSC2D201200CW6Q represents the active equivalent, ensuring continued design support and procurement availability.

Q: Are there any application restrictions when using the substitute part?

A: No application restrictions exist for equivalent electrical and mechanical parameters. The diode array configuration does not impose functional limitations for single-diode rectification applications.

Q: Do both parts carry identical compliance certifications?

A: Yes. Both parts are RoHS compliant with identical ECCN (EAR99) and HTSUS (8541.10.0080) classifications. Moisture sensitivity level is MSL 1 (unlimited) for both parts.

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