WNSC10650WQ Silicon Carbide Schottky Diode Equivalent & Substitute Parts

Part Overview

The WNSC10650WQ is a silicon carbide Schottky diode rated for 650 V DC reverse voltage and 10 A average rectified current in a TO-247-2 through-hole package. This component is classified as obsolete, necessitating identification of active equivalent alternatives for new designs and ongoing production requirements. Substitute parts must maintain electrical and mechanical compatibility while meeting current product availability and compliance standards.

Substiute Parts

WNSC10650WQ

WeEn SemiconductorsIn Stock: 987WNSC10650WQ Datasheet

Current PartRFQ

WNSC5D10650W6Q

WeEn SemiconductorsIn Stock: 1098WNSC5D10650W6Q Datasheet

MFR RecommendedRFQ

WNSC2D10650WQ

WeEn SemiconductorsIn Stock: 1900WNSC2D10650WQ Datasheet

Parametric EquivalentRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the WNSC10650WQ is determined by strict equivalence across the following electrical and mechanical parameters:

Critical Matching Parameters:

• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io): 10 A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
• Package / Case: TO-247-2
• Mounting Type: Through Hole
• Technology: SiC (Silicon Carbide) Schottky

Secondary Compatibility Parameters:

• Reverse Recovery Time (trr): 0 ns
• Operating Temperature - Junction: 175°C (minimum)

All identified substitute parts maintain identical electrical ratings and package specifications. Variations in reverse leakage current and junction capacitance remain within acceptable tolerances for this diode category and do not affect functional substitution.

Parameter Comparison

Engineering Selection Recommendations

WNSC5D10650W6Q (MFR Recommended Substitute)

This part is designated as the manufacturer-recommended substitute. It maintains all critical electrical parameters identical to the WNSC10650WQ while offering active product status and extended operating temperature range (-55°C to 175°C). The part is manufactured by WeEn Semiconductors and provides improved reverse leakage characteristics (50 µA versus 60 µA). Selection of this part is appropriate for applications requiring manufacturer-backed equivalence and extended temperature performance.

WNSC2D10650WQ (Parametric Equivalent)

This part provides parametric equivalence with identical electrical ratings and package specifications. It maintains active product status and offers ROHS3 compliance certification. The part features reduced junction capacitance (310 pF versus 328 pF) and improved reverse leakage performance (50 µA versus 60 µA). Operating temperature range is specified at 175°C maximum. This part is suitable for applications where parametric compatibility and current product availability are primary requirements.

Both substitute parts are available in active production status, addressing the obsolescence of the WNSC10650WQ. Selection between them depends on specific application requirements regarding temperature range and compliance certifications.

Frequently Asked Questions (FAQ)

Q: Can WNSC5D10650W6Q and WNSC2D10650WQ be used interchangeably with WNSC10650WQ?

A: Both parts maintain identical electrical ratings (650 V, 10 A, 1.7 V forward voltage) and TO-247-2 package specifications. They are electrically and mechanically compatible for direct substitution in applications designed for the WNSC10650WQ.

Q: What is the difference between the MFR Recommended and Parametric Equivalent substitutes?

A: WNSC5D10650W6Q is the manufacturer-recommended substitute with extended operating temperature range (-55°C to 175°C). WNSC2D10650WQ is a parametric equivalent with operating temperature specified at 175°C maximum. Both maintain identical core electrical parameters.

Q: Are there differences in reverse leakage current between these parts?

A: The WNSC10650WQ specifies 60 µA reverse leakage at 650 V. Both substitute parts specify 50 µA at the same conditions. This represents improved performance and does not affect substitution compatibility.

Q: Does junction capacitance variation affect substitution suitability?

A: The WNSC10650WQ specifies 328 pF at 1 V, 1 MHz. WNSC5D10650W6Q specifies 323 pF and WNSC2D10650WQ specifies 310 pF. These variations remain within acceptable tolerances for silicon carbide Schottky diode applications and do not compromise functional substitution.

Q: What is the significance of product status (Obsolete vs. Active)?

A: The WNSC10650WQ is classified as obsolete, indicating discontinued production. Both substitute parts maintain active product status, ensuring ongoing availability for new designs and production requirements.

Q: Are there RoHS compliance differences?

A: WNSC10650WQ is RoHS Compliant. WNSC2D10650WQ is ROHS3 Compliant. WNSC5D10650W6Q compliance status is not specified in available documentation. Compliance requirements should be verified against specific application standards.

Q: Can these parts be used in existing PCB designs without modification?

A: All three parts use identical TO-247-2 through-hole packaging and mounting specifications. Direct PCB substitution is possible without layout or footprint modifications.