VN10LPSTZ N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The VN10LPSTZ is an N-Channel MOSFET manufactured by Diodes Incorporated, designed for through-hole applications in the TO-92 compatible E-Line package. This device operates at 60 V drain-to-source voltage with a continuous drain current rating of 270 mA at 25°C and maximum power dissipation of 625 mW. The part is Active in product status and RoHS3 compliant. Substitute parts are identified based on matching electrical characteristics and mechanical compatibility within the N-Channel MOSFET category.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	270	mA
Power Dissipation (Max)	625	mW
Rds On (Max) @ 500mA, 10V	5	Ohm
Vgs(th) (Max) @ 1mA	2.5	V
Vgs (Max)	±20	V
Input Capacitance (Ciss) @ 25V	60	pF
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole
Package	E-Line-3, Formed Leads

Substitute Part Grouping Explanation

Substitute parts for the VN10LPSTZ are identified based on the following critical parameters that determine functional equivalence:

Electrical Compatibility Criteria:

Drain to Source Voltage (Vdss): 60 V minimum
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Gate-Source Voltage (Vgs): ±20 V maximum rating
Operating Temperature Range: -55°C to 150°C

Mechanical Compatibility Criteria:

Mounting Type: Through Hole
Package Type: TO-92-3 compatible

Regulatory Compliance:

RoHS3 Compliant
REACH Unaffected
ECCN: EAR99

The substitute parts 2N7000-D26Z, 2N7000-D74Z, and 2N7000-D75Z from onsemi meet these criteria. These devices share identical Vdss ratings, gate voltage specifications, and operating temperature ranges. While the substitute parts have lower continuous drain current ratings (200 mA versus 270 mA) and reduced power dissipation (400 mW versus 625 mW), they maintain electrical compatibility for applications within their specified current and power limits.

Parameter Comparison

Parameter	VN10LPSTZ (Diodes)	2N7000-D26Z (onsemi)	2N7000-D74Z (onsemi)	2N7000-D75Z (onsemi)	Unit
Drain to Source Voltage (Vdss)	60	60	60	60	V
Continuous Drain Current (Id) @ 25°C	270	200	200	200	mA
Power Dissipation (Max)	625	400	400	400	mW
Rds On (Max) @ 500mA, 10V	5	5	5	5	Ohm
Vgs(th) (Max) @ 1mA	2.5	3	3	3	V
Vgs (Max)	±20	±20	±20	±20	V
Input Capacitance (Ciss) @ 25V	60	50	50	50	pF
Operating Temperature Range	-55 to 150	-55 to 150	-55 to 150	-55 to 150	°C
Package Type	E-Line-3, Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Product Status	Active	Active	Active	Active

Engineering Selection Recommendations

All substitute parts listed are Active products with RoHS3 compliance and REACH unaffected status, matching the regulatory posture of the VN10LPSTZ. The 2N7000-D26Z, 2N7000-D74Z, and 2N7000-D75Z devices are functionally equivalent for applications requiring N-Channel MOSFET operation at 60 V with through-hole TO-92-3 package mounting.

Selection among the three substitute options should be based on application current requirements. The VN10LPSTZ supports 270 mA continuous drain current; substitute parts are rated for 200 mA continuous drain current. Applications operating below 200 mA at 25°C are compatible with all substitute parts. Applications requiring drain currents between 200 mA and 270 mA require the VN10LPSTZ.

The substitute parts exhibit slightly higher gate-source threshold voltage (3 V versus 2.5 V) and lower input capacitance (50 pF versus 60 pF), which may affect switching characteristics in gate-drive-sensitive applications. Drain-source on-resistance remains identical at 5 Ohm across all devices.

Frequently Asked Questions (FAQ)

Q: Can the 2N7000-D26Z, 2N7000-D74Z, or 2N7000-D75Z be used as direct replacements for the VN10LPSTZ?

A: These parts are electrically compatible for applications operating at or below 200 mA continuous drain current. The VN10LPSTZ supports higher current (270 mA) and power dissipation (625 mW). Direct substitution is valid only when application current requirements do not exceed the 200 mA rating of the substitute parts.

Q: Are the packages physically compatible?

A: The VN10LPSTZ uses an E-Line-3 package with formed leads, while substitute parts use TO-92-3 (TO-226AA) packages with formed leads. Both are through-hole configurations with three leads in similar physical arrangements. Pin-to-pin compatibility should be verified against specific PCB footprint requirements.

Q: What is the difference in gate-source threshold voltage between the VN10LPSTZ and substitute parts?

A: The VN10LPSTZ has a maximum Vgs(th) of 2.5 V at 1 mA, while substitute parts specify 3 V at 1 mA. This 0.5 V difference may affect gate drive timing and switching speed in circuits with marginal gate voltage margins.

Q: Do all parts meet the same regulatory requirements?

A: Yes. The VN10LPSTZ and all three substitute parts are RoHS3 compliant, REACH unaffected, and classified under ECCN EAR99. Regulatory compliance is equivalent across all options.

Q: What is the inventory status of substitute parts?

A: 2N7000-D26Z has 14,893 pieces in stock, 2N7000-D74Z has 3,200 pieces in stock, and 2N7000-D75Z has 8,771 pieces in stock. The VN10LPSTZ has 9,300 pieces in stock.

Q: How do the input capacitance values differ?

A: The VN10LPSTZ specifies 60 pF input capacitance at 25 V, while substitute parts specify 50 pF at 25 V. This 10 pF difference may affect high-frequency switching performance and gate charge characteristics.

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