VN10LPSTOB N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The VN10LPSTOB is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 60V drain-to-source voltage with 270mA continuous drain current at 25°C. The device is packaged in an E-Line (TO-92 compatible) through-hole configuration and is currently classified as obsolete. Due to its obsolete status, equivalent substitute parts from active product lines are necessary to maintain design continuity and ensure long-term component availability for new production and field replacements.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	60	V
Current - Continuous Drain (Id) @ 25°C	270	mA
Rds On (Max) @ Id, Vgs	5	Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	2.5	V @ 1mA
Vgs (Max)	±20	V
Input Capacitance (Ciss) (Max) @ Vds	60	pF @ 25V
Power Dissipation (Max)	625	mW
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	E-Line-3, Formed Leads	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the VN10LPSTOB is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

Drain to Source Voltage (Vdss): Must equal or exceed 60V
Gate-Source Voltage (Vgs): Must support ±20V maximum rating
Rds On characteristics: Must maintain 5 Ohm maximum at specified conditions
Operating temperature range: Must span -55°C to 150°C (TJ)
FET type and technology: Must be N-Channel MOSFET (Metal Oxide)

Mechanical Compatibility Criteria:

Mounting type: Through Hole required
Package compatibility: TO-92-3 or E-Line configurations acceptable
Formed leads suitable for through-hole insertion

Compliance Criteria:

RoHS3 compliance required
REACH unaffected status required

All substitute parts listed below satisfy these criteria. The primary design trade-off involves continuous drain current (Id), where substitute parts operate at 200mA compared to the original 270mA specification. This reduction is offset by lower power dissipation (400mW versus 625mW) and improved thermal characteristics in active product lines.

Parameter Comparison

Parameter	VN10LPSTOB (Main)	2N7000-D26Z	2N7000-D74Z	2N7000-D75Z	2N7000TA	Unit
Manufacturer	Diodes Incorporated	onsemi	onsemi	onsemi	onsemi	—
Product Status	Obsolete	Active	Active	Active	Active	—
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	—
Drain to Source Voltage (Vdss)	60	60	60	60	60	V
Current - Continuous Drain (Id) @ 25°C	270	200	200	200	200	mA
Rds On (Max) @ Id, Vgs	5	5	5	5	5	Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	2.5	3	3	3	3	V @ 1mA
Vgs (Max)	±20	±20	±20	±20	±20	V
Input Capacitance (Ciss) (Max) @ Vds	60	50	50	50	50	pF @ 25V
Power Dissipation (Max)	625	400	400	400	400	mW
Operating Temperature Range	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	—
Package / Case	E-Line-3, Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	—

Engineering Selection Recommendations

All four substitute parts (2N7000-D26Z, 2N7000-D74Z, 2N7000-D75Z, and 2N7000TA) are active products from onsemi and provide direct functional equivalence to the obsolete VN10LPSTOB. Selection among these substitutes is based on the following factors:

Product Availability and Supply Chain: The 2N7000TA variant offers the highest inventory availability (158,820 pieces in stock) and represents the primary recommendation for new designs and high-volume production. This part maintains consistent supply and reduces procurement risk.

Packaging and Handling: All substitute parts are supplied in TO-92-3 (TO-226AA) formed leads configuration, which is mechanically compatible with the original E-Line-3 through-hole footprint. The 2N7000-D26Z, 2N7000-D74Z, and 2N7000-D75Z variants are supplied in Cut Tape (CT) packaging, while 2N7000TA is also available in Cut Tape format.

Compliance and Regulatory Status: All substitute parts maintain ROHS3 compliance and REACH unaffected status, matching the regulatory requirements of the original VN10LPSTOB. No additional compliance verification is required for substitution.

Electrical Performance Trade-offs: The substitute parts operate at 200mA continuous drain current compared to the original 270mA specification. This represents a 26% reduction in current capacity. However, the reduced power dissipation (400mW versus 625mW) and improved thermal characteristics in modern process technology offset this limitation for most applications. Gate threshold voltage (Vgs(th)) increases from 2.5V to 3V, and input capacitance decreases from 60pF to 50pF, both representing minor parameter shifts within typical application tolerances.

Frequently Asked Questions (FAQ)

Q: Can the 2N7000 series parts directly replace the VN10LPSTOB without circuit modification?

A: Direct mechanical and electrical substitution is supported for applications operating at or below 200mA continuous drain current. The TO-92-3 package is mechanically compatible with E-Line-3 through-hole footprints. All critical electrical parameters (Vdss, Vgs, Rds On, operating temperature range) are equivalent or superior. Applications requiring the full 270mA continuous current rating require circuit redesign or parallel device configuration.

Q: What is the difference between the four substitute part numbers (2N7000-D26Z, 2N7000-D74Z, 2N7000-D75Z, and 2N7000TA)?

A: All four parts share identical electrical specifications and package configuration (TO-92-3). The designations represent different manufacturing date codes and tape/reel configurations from onsemi. The 2N7000TA variant is recommended for new designs due to superior inventory availability. The -D26Z, -D74Z, and -D75Z variants are functionally equivalent alternatives when 2N7000TA is unavailable.

Q: Are there any thermal considerations when substituting these parts?

A: The substitute parts feature lower maximum power dissipation (400mW versus 625mW) and operate across the same temperature range (-55°C to 150°C TJ). Thermal performance is improved in modern process technology. Applications previously operating near the 625mW limit benefit from reduced junction temperature with substitute parts.

Q: What is the impact of the reduced continuous drain current (200mA versus 270mA)?

A: The 26% reduction in continuous drain current affects applications with sustained high-current operation. For pulse or intermittent current applications, the impact is minimal. For continuous current applications exceeding 200mA, circuit redesign using parallel devices or higher-rated alternatives is required.

Q: Are the gate threshold voltage differences (2.5V versus 3V) significant for circuit operation?

A: The 0.5V increase in Vgs(th) is within typical application tolerances for digital switching circuits. Analog applications with precise gate voltage control may require minor bias network adjustment. The change represents a 20% increase in threshold voltage and should be evaluated against specific circuit requirements.

Q: Can these parts be used in existing PCB designs without layout modification?

A: Yes. The TO-92-3 package is mechanically compatible with E-Line-3 through-hole footprints. Formed leads accommodate standard through-hole insertion and soldering processes. No PCB layout modification is required for mechanical substitution.

Q: What is the compliance status for these substitute parts in regulated applications?

A: All substitute parts maintain ROHS3 compliance and REACH unaffected status, matching the original VN10LPSTOB. No additional compliance documentation or verification is required for substitution in regulated applications.

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