VLZ10B-GS18 Equivalent & Substitute Parts

Part Overview

The VLZ10B-GS18 is a Zener diode rated at 9.66 V nominal with 500 mW power dissipation in a SOD-80 QuadroMELF surface mount package, manufactured by Vishay General Semiconductor - Diodes Division. This component is classified as Obsolete, which necessitates identification of functionally equivalent alternatives for ongoing design support and procurement. The part carries AEC-Q101 automotive qualification and ROHS3 compliance.

Substiute Parts

VLZ10B-GS18

Vishay General Semiconductor - Diodes DivisionIn Stock: 1126VLZ10B-GS18 Datasheet

Current PartRFQ

TLZ10B-GS18

Vishay General Semiconductor - Diodes DivisionIn Stock: 768TLZ10B-GS18 Datasheet

DirectRFQ

1N4104DUR-1

Microchip TechnologyIn Stock: 6911N4104DUR-1 Datasheet

MFR RecommendedRFQ

1N4104UR-1

Microchip TechnologyIn Stock: 9591N4104UR-1 Datasheet

MFR RecommendedRFQ

1N5530BUR-1

Microchip TechnologyIn Stock: 9461N5530BUR-1 Datasheet

MFR RecommendedRFQ

1N758AUR-1

Microchip TechnologyIn Stock: 8621N758AUR-1 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the VLZ10B-GS18 is determined by the following critical parameters:

Electrical Compatibility Criteria:

• Zener voltage nominal rating within acceptable circuit tolerance
• Maximum power dissipation rating of 500 mW
• Operating temperature range of -65°C to 175°C
• Surface mount mounting type

Mechanical Compatibility Criteria:

• Package form factor compatibility with PCB layout constraints
• Lead configuration suitable for automated assembly

The substitute parts identified fall into two categories based on these parameters:

Category 1 - Direct Vishay Substitutes (Same Manufacturer Series):

• TLZ10B-GS18: Active product status, 10 V nominal (0.34 V variance from original), identical power rating and temperature range, SOD-80 MiniMELF package

Category 2 - Cross-Manufacturer Alternatives (Microchip Technology):

• 1N4104DUR-1, 1N4104UR-1, 1N5530BUR-1, 1N758AUR-1: All rated at 10 V nominal with 500 mW power dissipation, operating temperature -65°C to 175°C, DO-213AA package form

Parameter Comparison

Engineering Selection Recommendations

For Automotive Applications with AEC-Q101 Requirement:

The TLZ10B-GS18 is the primary substitute for the VLZ10B-GS18. Both components are manufactured by Vishay General Semiconductor - Diodes Division and share identical electrical specifications for power dissipation (500 mW), impedance (8 Ohms), and operating temperature range (-65°C to 175°C). The TLZ10B-GS18 carries Active product status, ensuring long-term availability. The nominal zener voltage difference of 0.34 V (10 V versus 9.66 V) is within typical circuit tolerance margins for voltage regulation applications. The TLZ10B-GS18 is ROHS3 compliant and available in SOD-80 MiniMELF packaging. Note that automotive grade and AEC-Q101 qualification status are not specified for the TLZ10B-GS18 in the provided data.

For Non-Automotive Applications or Where Package Form Factor Permits:

The Microchip Technology alternatives (1N4104DUR-1, 1N4104UR-1, 1N5530BUR-1, 1N758AUR-1) provide functionally equivalent 10 V, 500 mW zener diodes with Active product status. These components utilize the DO-213AA package form, which differs from the original SOD-80 QuadroMELF. Selection among these four options depends on specific circuit requirements:

• 1N4104DUR-1: Offers ±1% tolerance specification and ROHS3 compliance, providing tighter voltage regulation characteristics.
• 1N4104UR-1: Provides ±5% tolerance with RoHS non-compliance status.
• 1N5530BUR-1: Rated at ±5% tolerance with 60 Ohms impedance, intermediate between low and high impedance options.
• 1N758AUR-1: Rated at ±5% tolerance with 7 Ohms impedance, closest impedance match to the original 8 Ohms specification.

All Microchip alternatives operate across the -65°C to 175°C temperature range and carry Active product status. RoHS compliance varies; only 1N4104DUR-1 is ROHS3 compliant among the Microchip options.

Frequently Asked Questions (FAQ)

Q: Can the TLZ10B-GS18 directly replace the VLZ10B-GS18 in automotive applications?

A: The TLZ10B-GS18 shares identical electrical specifications (500 mW power, 8 Ohms impedance, -65°C to 175°C operating range) and is manufactured by the same company. The 0.34 V nominal voltage difference (10 V versus 9.66 V) is within standard circuit tolerance. However, automotive grade and AEC-Q101 qualification status are not specified for the TLZ10B-GS18 in the provided documentation. Verification against specific design requirements is necessary.

Q: What is the significance of the package form factor difference between SOD-80 QuadroMELF and DO-213AA?

A: SOD-80 QuadroMELF and DO-213AA are distinct surface mount package geometries with different footprint dimensions and lead configurations. PCB layout modifications are required when substituting between these package types. The Microchip alternatives utilize DO-213AA packaging, while the Vishay TLZ10B-GS18 uses SOD-80 MiniMELF. Physical compatibility with existing PCB designs must be confirmed before component selection.

Q: Why do the Microchip alternatives show different impedance values?

A: Impedance (Zzt) is a dynamic parameter that varies with manufacturing process and design. The original VLZ10B-GS18 specifies 8 Ohms impedance. Among the Microchip alternatives, the 1N758AUR-1 (7 Ohms) provides the closest impedance match, while 1N4104DUR-1 and 1N4104UR-1 specify 200 Ohms. Higher impedance values result in greater voltage regulation variation across load current changes. Circuit performance may differ depending on impedance selection.

Q: What is the impact of RoHS compliance status on component selection?

A: ROHS3 compliance indicates the component meets Restriction of Hazardous Substances regulations. The original VLZ10B-GS18 and TLZ10B-GS18 are ROHS3 compliant. Among the Microchip alternatives, only 1N4104DUR-1 is ROHS3 compliant; the remaining three (1N4104UR-1, 1N5530BUR-1, 1N758AUR-1) are RoHS non-compliant. Design specifications and regional regulations determine whether RoHS compliance is mandatory.

Q: How does the reverse leakage current specification affect circuit performance?

A: Reverse leakage current determines the quality of the zener diode's blocking characteristics. The original VLZ10B-GS18 specifies 40 µA @ 8.94 V, which is relatively high. The TLZ10B-GS18 specifies 40 nA @ 8.94 V, representing a 1000-fold improvement. Microchip alternatives range from 50 nA to 500 nA. Lower leakage current reduces standby power consumption and improves voltage regulation stability. Applications sensitive to leakage current should prioritize components with lower specified values.

Q: Is the voltage tolerance specification critical for substitution?

A: Voltage tolerance defines the acceptable range of the zener voltage around the nominal rating. The original VLZ10B-GS18 does not specify tolerance. The 1N4104DUR-1 offers ±1% tolerance (9.9 V to 10.1 V), while other alternatives specify ±5% tolerance (9.5 V to 10.5 V). Tighter tolerance improves voltage regulation precision. Circuit designs with strict voltage regulation requirements should prioritize components with lower tolerance specifications.

Q: Can the Microchip 1N4104DUR-1 be used in place of the VLZ10B-GS18?

A: The 1N4104DUR-1 provides equivalent electrical performance with 10 V nominal rating, 500 mW power dissipation, and -65°C to 175°C operating range. It offers superior specifications including ±1% tolerance and ROHS3 compliance. However, the DO-213AA package differs from the original SOD-80 QuadroMELF, requiring PCB layout modification. The component is Active status and suitable for non-automotive applications. Automotive applications require verification of grade and qualification status.