VEC2415-TL-W-Z Equivalent & Substitute Parts

Part Overview

The VEC2415-TL-W-Z is a dual N-channel MOSFET array manufactured by onsemi, rated for 60V drain-to-source voltage and 3A continuous drain current in a surface mount SOT-28FL/VEC8 package. This component is classified as obsolete, necessitating identification of equivalent substitute parts for ongoing design requirements and procurement needs. Active alternatives with compatible electrical and mechanical characteristics are available to maintain design functionality.

Substiute Parts

VEC2415-TL-W-Z

onsemiIn Stock: 1022VEC2415-TL-W-Z Datasheet

Current PartRFQ

QH8K51TR

Rohm SemiconductorIn Stock: 17806QH8K51TR Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the VEC2415-TL-W-Z is determined by the following critical parameters:

Configuration Match: Both the main part and substitute must feature a dual N-channel MOSFET configuration to maintain circuit topology and pin compatibility.

Voltage Rating: The substitute part must support the application voltage requirements. The VEC2415-TL-W-Z operates at 60V Vdss; substitutes with equal or higher voltage ratings are acceptable.

Current Capability: The substitute must deliver sufficient continuous drain current for the application. The VEC2415-TL-W-Z is rated at 3A; substitutes with equal or higher current ratings are acceptable.

Threshold Voltage (Vgs(th)): Gate threshold voltage must remain within compatible ranges to ensure proper switching behavior with existing gate drive circuits.

On-State Resistance (Rds On): The substitute's on-state resistance must not exceed the original specification to prevent excessive power dissipation and thermal issues.

Package Compatibility: Surface mount 8-SMD flat lead packages ensure mechanical and electrical compatibility with existing PCB layouts.

Compliance Status: RoHS3 compliance and REACH unaffected status are required for regulatory adherence.

The QH8K51TR from Rohm Semiconductor qualifies as a substitute based on these criteria, with higher voltage and compliance ratings suitable for applications requiring the VEC2415-TL-W-Z.

Parameter Comparison

Engineering Selection Recommendations

The QH8K51TR from Rohm Semiconductor is an active substitute for the obsolete VEC2415-TL-W-Z. Both components maintain ROHS3 compliance and REACH unaffected status, satisfying regulatory requirements for new designs and production runs.

The QH8K51TR provides a higher voltage rating (100V versus 60V), offering enhanced voltage margin for applications originally designed around the VEC2415-TL-W-Z. The substitute's lower gate charge (4.7nC versus 10nC) and reduced input capacitance (290pF versus 505pF) result in faster switching characteristics and reduced gate drive power requirements.

The QH8K51TR's continuous drain current rating of 2A is lower than the original 3A specification. Applications requiring the full 3A capability of the VEC2415-TL-W-Z must evaluate whether the 2A rating of the QH8K51TR is sufficient for the intended circuit function. The higher on-state resistance of the QH8K51TR (325mOhm versus 80mOhm) results in increased power dissipation at equivalent current levels and must be assessed against thermal design constraints.

The active product status of the QH8K51TR ensures ongoing availability, technical support, and supply chain continuity compared to the obsolete VEC2415-TL-W-Z.

Frequently Asked Questions (FAQ)

Q: Can the QH8K51TR directly replace the VEC2415-TL-W-Z in existing designs?

A: Pin compatibility exists due to identical 8-SMD flat lead package configurations. However, electrical parameter differences require circuit evaluation. The lower current rating (2A versus 3A) and higher on-state resistance (325mOhm versus 80mOhm) must be verified against application requirements.

Q: What is the significance of the higher voltage rating on the QH8K51TR?

A: The QH8K51TR's 100V Vdss rating provides additional voltage margin compared to the VEC2415-TL-W-Z's 60V rating. This allows operation in higher voltage applications without exceeding device ratings, though it does not require modification of circuits designed for 60V operation.

Q: How do the gate charge differences affect circuit performance?

A: The QH8K51TR's lower gate charge (4.7nC at 5V versus 10nC at 10V) reduces the charge required to switch the device. This results in faster switching transitions and lower gate drive power consumption, potentially improving overall circuit efficiency.

Q: Are there thermal considerations when substituting these parts?

A: The QH8K51TR's higher on-state resistance generates more heat at equivalent current levels. Thermal analysis is required to ensure the PCB layout and thermal management design accommodate the increased power dissipation, particularly in applications approaching the 2A current limit.

Q: Do both parts meet the same compliance standards?

A: Both the VEC2415-TL-W-Z and QH8K51TR are ROHS3 compliant and REACH unaffected. Regulatory compliance is maintained when substituting between these parts.

Q: What is the impact of the lower input capacitance on the QH8K51TR?

A: The reduced input capacitance (290pF versus 505pF) decreases the capacitive load on the gate drive circuit, enabling faster switching and reducing gate drive power requirements. This is beneficial for high-frequency switching applications.