VB20100C-M3/8W Equivalent & Substitute Parts

Part Overview

The VB20100C-M3/8W is a Schottky diode array manufactured by Vishay General Semiconductor - Diodes Division. This component features a 1 Pair Common Cathode configuration with a maximum reverse voltage of 100 V and an average rectified current of 10 A per diode. The device is housed in a TO-263-3 D2PAK surface mount package and is part of the TMBS® series. The product maintains Active status with full RoHS3 compliance and unlimited moisture sensitivity level (MSL 1).

Equivalent and substitute parts are identified when design requirements permit variations in electrical performance while maintaining functional compatibility within the application circuit. Substitutes may offer enhanced specifications such as increased current ratings, improved leakage characteristics, or extended temperature ranges, provided the core parameters remain within acceptable design tolerances.

Substiute Parts

VB20100C-M3/8W
Vishay General Semiconductor - Diodes DivisionIn Stock: 67311VB20100C-M3/8W Datasheet
VB20100C-M3/8W
Current Part
VB20100C-E3/8W
Vishay General Semiconductor - Diodes DivisionIn Stock: 87370VB20100C-E3/8W Datasheet
VB20100C-E3/8W
Parametric Equivalent
MBRB20100CT-TP
Micro Commercial CoIn Stock: 20770MBRB20100CT-TP Datasheet
MBRB20100CT-TP
MFR Recommended
NTSB20100CTG
onsemiIn Stock: 4449NTSB20100CTG Datasheet
NTSB20100CTG
MFR Recommended
STPS16H100CG-TR
STMicroelectronicsIn Stock: 7084STPS16H100CG-TR Datasheet
STPS16H100CG-TR
MFR Recommended
STPS20H100CG-TR
STMicroelectronicsIn Stock: 90270STPS20H100CG-TR Datasheet
STPS20H100CG-TR
MFR Recommended

Key Parameters

Parameter Value Unit
Diode Configuration 1 Pair Common Cathode
Technology Schottky
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) (per Diode) 10 A
Voltage - Forward (Vf) (Max) @ If 790 mV @ 10 A
Speed Fast Recovery ≤ 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 800 µA @ 100 V
Operating Temperature - Junction -40 to 150 °C
Mounting Type Surface Mount
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution eligibility for the VB20100C-M3/8W is determined by strict adherence to the following core parameters:

Mandatory Matching Parameters:

  • Diode Configuration: 1 Pair Common Cathode
  • Technology: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Allowable Variation Parameters:

  • Current - Average Rectified (Io) (per Diode): Equal to or greater than 10 A
  • Voltage - Forward (Vf) (Max) @ If: Within acceptable circuit design margins
  • Current - Reverse Leakage @ Vr: Lower values indicate improved performance
  • Operating Temperature - Junction: Equal to or greater than the specified range
  • RoHS Status: ROHS3 Compliant
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)

Substitute parts must maintain identical mechanical and electrical interface characteristics to ensure direct replacement capability without circuit redesign or PCB layout modification.

Parameter Comparison

Parameter VB20100C-M3/8W VB20100C-E3/8W MBRB20100CT-TP NTSB20100CTG STPS16H100CG-TR STPS20H100CG-TR
Manufacturer Vishay Vishay Micro Commercial Co onsemi STMicroelectronics STMicroelectronics
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Technology Schottky Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 100 V 100 V 100 V 100 V 100 V 100 V
Current - Average Rectified (Io) (per Diode) 10 A 10 A 20 A 10 A 8 A 10 A
Voltage - Forward (Vf) (Max) @ If 790 mV @ 10 A 790 mV @ 10 A 850 mV @ 10 A 830 mV @ 10 A 770 mV @ 8 A 770 mV @ 10 A
Speed Fast Recovery ≤ 500ns, > 200mA (Io) Fast Recovery ≤ 500ns, > 200mA (Io) Fast Recovery ≤ 500ns, > 200mA (Io) Fast Recovery ≤ 500ns, > 200mA (Io) Fast Recovery ≤ 500ns, > 200mA (Io) Fast Recovery ≤ 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 800 µA @ 100 V 800 µA @ 100 V 150 µA @ 100 V 17 µA @ 70 V 3.6 µA @ 100 V 4.5 µA @ 100 V
Operating Temperature - Junction -40 to 150 °C -40 to 150 °C -55 to 150 °C -40 to 150 °C 175 °C (Max) 175 °C (Max)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-263-3, D2PAK TO-263-3, D2PAK TO-263-3, D2PAK TO-263-3, D2PAK TO-263-3, D2PAK TO-263-3, D2PAK
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
Product Status Active Active Active Obsolete Active Active

Engineering Selection Recommendations

VB20100C-E3/8W (Vishay General Semiconductor - Diodes Division)

This part is a parametric equivalent to the VB20100C-M3/8W with identical electrical specifications and packaging. Both devices are Active products with ROHS3 compliance. Selection between these two Vishay variants depends on procurement availability and supply chain considerations. The VB20100C-E3/8W offers higher inventory availability (87,300 units) compared to the main part (67,300 units).

STPS20H100CG-TR (STMicroelectronics)

This substitute maintains the 100 V reverse voltage rating and 10 A current specification while offering improved forward voltage characteristics (770 mV @ 10 A versus 790 mV @ 10 A) and significantly lower reverse leakage current (4.5 µA @ 100 V versus 800 µA @ 100 V). The device is Active with ROHS3 compliance and supports an extended maximum junction temperature of 175°C. This part is suitable for applications where lower leakage and improved thermal performance are beneficial. Inventory availability is high (90,200 units).

MBRB20100CT-TP (Micro Commercial Co)

This substitute provides enhanced current capability at 20 A per diode, double the main part specification, while maintaining the 100 V reverse voltage rating and D2PAK package. The device is Active with ROHS3 compliance and supports an extended operating temperature range (-55°C to 150°C). This part is appropriate for applications requiring higher current capacity or extended low-temperature operation. Inventory availability is moderate (20,696 units).

STPS16H100CG-TR (STMicroelectronics)

This substitute maintains the 100 V reverse voltage rating with a reduced current specification of 8 A per diode. The device offers improved forward voltage (770 mV @ 8 A) and significantly lower reverse leakage current (3.6 µA @ 100 V). The part is Active with ROHS3 compliance and supports an extended maximum junction temperature of 175°C. This part is suitable for applications where the 8 A current rating is sufficient and lower leakage performance is required. Inventory availability is limited (7,014 units).

NTSB20100CTG (onsemi)

This substitute matches the 100 V reverse voltage and 10 A current specifications of the main part. However, the product status is listed as Obsolete, indicating discontinued manufacturing. While inventory is available (4,400 units), this part is not recommended for new designs due to long-term supply uncertainty and lack of manufacturer support.

Frequently Asked Questions (FAQ)

Q: Can the VB20100C-E3/8W be used as a direct replacement for the VB20100C-M3/8W?

A: Yes. The VB20100C-E3/8W is a parametric equivalent with identical electrical specifications, diode configuration, package type, and compliance certifications. Both parts are manufactured by Vishay and are Active products. Direct substitution is supported without circuit modification.

Q: What is the primary difference between the VB20100C-M3/8W and the STPS20H100CG-TR?

A: Both parts maintain the same 100 V reverse voltage and 10 A current rating. The STPS20H100CG-TR offers lower forward voltage (770 mV versus 790 mV @ 10 A) and significantly lower reverse leakage current (4.5 µA versus 800 µA @ 100 V). The STMicroelectronics part also supports a higher maximum junction temperature of 175°C. These improvements make the STPS20H100CG-TR suitable for applications where thermal performance and leakage characteristics are critical.

Q: Can the MBRB20100CT-TP be used in place of the VB20100C-M3/8W?

A: The MBRB20100CT-TP maintains the same 100 V reverse voltage rating and D2PAK package. However, it provides 20 A current capacity per diode, which is double the main part specification. This higher current rating makes it suitable for applications requiring greater current handling. The part is mechanically and electrically compatible for direct substitution, though the enhanced current capability may not be necessary for all applications.

Q: Why is the NTSB20100CTG listed as a substitute if it is Obsolete?

A: The NTSB20100CTG is included in the substitute list for reference purposes and for applications currently using this part. However, the Obsolete product status indicates that onsemi has discontinued manufacturing. For new designs or long-term production requirements, selection of an Active substitute such as the STPS20H100CG-TR or VB20100C-E3/8W is recommended to ensure sustained supply availability.

Q: Are all substitute parts available in the same packaging format?

A: Yes. All substitute parts listed are housed in the TO-263-3 D2PAK (2 Leads + Tab) surface mount package, ensuring mechanical compatibility and identical PCB footprint. Packaging variations exist only in the distribution format (Tape & Reel, Cut Tape, or Tube), which does not affect component functionality or mounting.

Q: What compliance certifications apply to all listed parts?

A: All parts maintain ROHS3 compliance and Moisture Sensitivity Level 1 (Unlimited). These certifications ensure compatibility with modern manufacturing processes and environmental regulations. All parts are also classified under ECCN EAR99 and HTSUS 8541.10.0080 for regulatory and tariff purposes.

Q: How do reverse leakage current differences affect circuit performance?

A: Reverse leakage current represents the small current flowing through the diode in the reverse-biased state. Lower leakage current reduces power dissipation and improves circuit efficiency, particularly in applications with high reverse voltage stress or extended operating periods. The STPS20H100CG-TR and STPS16H100CG-TR offer significantly lower leakage (4.5 µA and 3.6 µA respectively) compared to the main part (800 µA), making them preferable for precision applications or battery-powered systems.

Q: Can the STPS16H100CG-TR be used if the application requires 10 A current?

A: The STPS16H100CG-TR is rated for 8 A per diode, which is below the 10 A specification of the main part. This part is suitable only for applications where the actual circuit current requirement does not exceed 8 A. For applications requiring the full 10 A capability, the STPS20H100CG-TR or VB20100C-E3/8W are appropriate selections.

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