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USB10H MOSFET Equivalent & Substitute Parts
Part Overview
The USB10H is a dual P-channel MOSFET array manufactured by onsemi, designed for surface mount applications requiring logic-level gate control at 20V drain-source voltage with 1.9A continuous drain current capability. The device is packaged in a SuperSOT™-6 (SOT-23-6 Thin) configuration and delivers 700mW maximum power dissipation across an operating temperature range of -55°C to 150°C.
The USB10H is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.
Substiute Parts
Key Parameters
| Parameter | USB10H Value |
|---|---|
| Manufacturer | onsemi |
| Configuration | 2 P-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 1.9A |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 1.9A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 4.2nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 441pF @ 10V |
| Power - Max | 700mW |
| Operating Temperature Range | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| FET Feature | Logic Level Gate |
| Technology | MOSFET (Metal Oxide) |
| Product Status | Obsolete |
Substitute Part Grouping Explanation
Substitution of the USB10H is determined by strict alignment of the following electrical and mechanical parameters:
Critical Matching Parameters:
- Configuration: 2 P-Channel (Dual) MOSFET array
- Drain to Source Voltage (Vdss): 20V minimum
- Continuous Drain Current (Id): Equal to or greater than 1.9A
- Gate Feature: Logic Level Gate
- Technology: MOSFET (Metal Oxide)
- Mounting Type: Surface Mount
- Package Compatibility: SOT-23-6 or equivalent 6-pin surface mount package
Electrical Performance Criteria:
- Rds On (Max): Must not exceed 170mOhm at rated current and gate voltage
- Vgs(th) (Max): Must not exceed 1.5V at 250µA
- Operating Temperature Range: Must encompass -55°C to 150°C minimum
The DMP2240UDM-7 from Diodes Incorporated meets all critical substitution criteria. It maintains identical Vdss (20V), exceeds the continuous drain current requirement (2A vs. 1.9A), operates within the required temperature range (-65°C to 150°C), and is packaged in a compatible SOT-26 surface mount configuration. The substitute part demonstrates improved electrical performance characteristics, including lower Rds On (150mOhm vs. 170mOhm) and lower gate threshold voltage (1V vs. 1.5V).
Parameter Comparison
| Parameter | USB10H (onsemi) | DMP2240UDM-7 (Diodes Inc.) | Compatibility |
|---|---|---|---|
| Configuration | 2 P-Channel (Dual) | 2 P-Channel (Dual) | Match |
| Drain to Source Voltage (Vdss) | 20V | 20V | Match |
| Current - Continuous Drain (Id) @ 25°C | 1.9A | 2A | Substitute Exceeds |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 1.9A, 4.5V | 150mOhm @ 2A, 4.5V | Substitute Superior |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA | 1V @ 250µA | Substitute Superior |
| Input Capacitance (Ciss) (Max) @ Vds | 441pF @ 10V | 320pF @ 16V | Substitute Lower |
| Power - Max | 700mW | 600mW | Substitute Lower |
| Operating Temperature Range | -55°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | Substitute Exceeds |
| Mounting Type | Surface Mount | Surface Mount | Match |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 | Compatible |
| FET Feature | Logic Level Gate | Logic Level Gate | Match |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | Match |
Engineering Selection Recommendations
DMP2240UDM-7 (Diodes Incorporated) - Primary Substitute
The DMP2240UDM-7 is classified as an active product with full RoHS3 compliance and REACH unaffected status. This substitute part provides direct functional replacement for the obsolete USB10H with enhanced electrical performance across all critical parameters. The DMP2240UDM-7 delivers superior drain current capability (2A vs. 1.9A), lower on-resistance (150mOhm vs. 170mOhm), and improved gate threshold characteristics (1V vs. 1.5V). The extended operating temperature range (-65°C to 150°C) provides additional thermal margin beyond the USB10H specification (-55°C to 150°C). Both devices utilize identical logic-level gate architecture and surface mount packaging compatible with SOT-23-6 footprints. The substitute part's active product status ensures long-term availability and supply chain continuity.
Compliance certifications for both parts include REACH unaffected status and EAR99 export classification. The DMP2240UDM-7 carries RoHS3 compliance, supporting modern manufacturing and environmental standards.
Frequently Asked Questions (FAQ)
Q: Can the DMP2240UDM-7 directly replace the USB10H in existing designs?
A: Yes. Both devices are dual P-channel MOSFETs with identical 20V Vdss rating, logic-level gate control, and compatible SOT-23-6 surface mount packaging. The DMP2240UDM-7 meets or exceeds all electrical specifications of the USB10H, including drain current, on-resistance, and gate threshold voltage. Pin-to-pin compatibility and footprint compatibility are maintained.
Q: What are the key electrical advantages of the DMP2240UDM-7 substitute?
A: The DMP2240UDM-7 provides three measurable electrical improvements: (1) higher continuous drain current rating (2A vs. 1.9A), (2) lower on-resistance (150mOhm vs. 170mOhm at 4.5V gate voltage), and (3) lower gate threshold voltage (1V vs. 1.5V at 250µA). These characteristics result in reduced power dissipation and improved switching performance in applications.
Q: Are there package compatibility concerns between USB10H and DMP2240UDM-7?
A: No package compatibility concerns exist. Both devices are packaged in 6-pin surface mount configurations. The USB10H uses SuperSOT™-6 (SOT-23-6 Thin) and the DMP2240UDM-7 uses SOT-26, both of which are standard SOT-23-6 footprint variants. PCB layouts designed for the USB10H accommodate the DMP2240UDM-7 without modification.
Q: What is the operating temperature range difference between these parts?
A: The USB10H operates from -55°C to 150°C junction temperature, while the DMP2240UDM-7 operates from -65°C to 150°C. The substitute part provides an additional 10°C of low-temperature margin, expanding the usable operating envelope for cold-environment applications.
Q: Why is the USB10H classified as obsolete?
A: The USB10H is an older onsemi product that has been discontinued. The DMP2240UDM-7 from Diodes Incorporated represents the current-generation equivalent with active product status, ensuring ongoing availability, manufacturing support, and compliance with current industry standards.
Q: Are compliance certifications equivalent between the two parts?
A: Both parts carry REACH unaffected status and EAR99 export classification. The DMP2240UDM-7 additionally carries RoHS3 compliance certification, meeting modern environmental and manufacturing requirements. Both parts have unlimited moisture sensitivity level (MSL 1).
Q: What is the gate charge difference, and does it affect circuit design?
A: The USB10H specifies 4.2nC gate charge at 4.5V. The DMP2240UDM-7 does not provide gate charge specification in the available data. However, the lower input capacitance (320pF vs. 441pF) of the substitute part indicates faster switching characteristics. Circuit designs should verify gate drive requirements if gate charge is a critical parameter for the application.
Q: Can the DMP2240UDM-7 be used in high-power applications where the USB10H was used?
A: The DMP2240UDM-7 has a lower maximum power rating (600mW vs. 700mW). For applications operating near the 700mW limit of the USB10H, thermal analysis is required to confirm the substitute part's adequacy. The lower on-resistance of the DMP2240UDM-7 typically results in lower power dissipation at equivalent operating currents, partially offsetting the lower power rating.
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