US1ME-TP Equivalent & Substitute Parts

Part Overview

The US1ME-TP is a general-purpose rectifier diode manufactured by Micro Commercial Co, rated for 1000 V DC reverse voltage and 1 A average rectified current in a surface mount SMAE package. This component is classified as Obsolete, indicating it is no longer in active production. Identifying equivalent and substitute parts is necessary to support ongoing maintenance, repair, and redesign activities for legacy systems utilizing this diode.

Substiute Parts

US1ME-TP
Micro Commercial CoIn Stock: 15828US1ME-TP Datasheet
US1ME-TP
Current Part
CGRA4007-G
Comchip TechnologyIn Stock: 52269CGRA4007-G Datasheet
CGRA4007-G
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GF1K-E3/67A
Vishay General Semiconductor - Diodes DivisionIn Stock: 30344GF1K-E3/67A Datasheet
GF1K-E3/67A
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GF1M
onsemiIn Stock: 63622GF1M Datasheet
GF1M
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GF1M-E3/5CA
Vishay General Semiconductor - Diodes DivisionIn Stock: 18122GF1M-E3/5CA Datasheet
GF1M-E3/5CA
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GF1M-E3/67A
Vishay General Semiconductor - Diodes DivisionIn Stock: 7857GF1M-E3/67A Datasheet
GF1M-E3/67A
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GF1M/1754
Vishay General Semiconductor - Diodes DivisionIn Stock: 1057GF1M/1754 Datasheet
GF1M/1754
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MRA4006T3G
onsemiIn Stock: 45351MRA4006T3G Datasheet
MRA4006T3G
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MRA4007T3G
onsemiIn Stock: 425144MRA4007T3G Datasheet
MRA4007T3G
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S1M-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 23813S1M-M3/5AT Datasheet
S1M-M3/5AT
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S1M-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 9227S1M-M3/61T Datasheet
S1M-M3/61T
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S1MHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 589863S1MHE3_A/H Datasheet
S1MHE3_A/H
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S1MHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 96526S1MHE3_A/I Datasheet
S1MHE3_A/I
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STTH108A
STMicroelectronicsIn Stock: 80277STTH108A Datasheet
STTH108A
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STTH110A
STMicroelectronicsIn Stock: 60146STTH110A Datasheet
STTH110A
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US1K-13-F
Diodes IncorporatedIn Stock: 125497US1K-13-F Datasheet
US1K-13-F
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US1M-13-F
Diodes IncorporatedIn Stock: 935409US1M-13-F Datasheet
US1M-13-F
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US1M_R1_00001
Panjit International Inc.In Stock: 3042US1M_R1_00001 Datasheet
US1M_R1_00001
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Key Parameters

Parameter Value
Voltage - DC Reverse (Vr) (Max) 1000 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 1 A
Reverse Recovery Time (trr) 75 ns
Current - Reverse Leakage @ Vr 10 µA @ 1000 V
Mounting Type Surface Mount
Package / Case DO-214AC, SMA
Operating Temperature - Junction -65°C ~ 175°C
Technology Standard
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the US1ME-TP is determined by the following critical parameters:

Voltage Rating: The substitute must support a minimum DC reverse voltage of 1000 V to maintain circuit protection and reliability.

Current Rating: The substitute must support a minimum average rectified current of 1 A.

Package Compatibility: The substitute must be compatible with surface mount assembly processes. The US1ME-TP uses the SMAE package (DO-214AC, SMA form factor). Substitutes using DO-214AC (SMA) or DO-214BA (GF1) packages are mechanically compatible with surface mount assembly.

Recovery Characteristics: The US1ME-TP exhibits fast recovery with a reverse recovery time of 75 ns. Substitutes with standard recovery characteristics (>500 ns) represent a functional trade-off but remain electrically compatible for general-purpose rectification applications.

Temperature Range: The US1ME-TP operates from -65°C to 175°C. Substitutes with narrower temperature ranges (-55°C to 150°C) are acceptable for applications within the overlapping temperature window.

Compliance: All substitutes must maintain ROHS3 compliance and REACH unaffected status to ensure regulatory alignment.

Parameter Comparison

Part Number Manufacturer Vr (Max) Io Vf @ 1A trr Package Status Temp Range
US1ME-TP Micro Commercial Co 1000 V 1 A 1.7 V 75 ns DO-214AC (SMA) Obsolete -65°C ~ 175°C
CGRA4007-G Comchip Technology 1000 V 1 A 1.1 V Standard DO-214AC (SMA) Active -55°C ~ 150°C
GF1K-E3/67A Vishay General Semiconductor 800 V 1 A 1.2 V 2 µs DO-214BA (GF1) Active -65°C ~ 175°C
GF1M onsemi 1000 V 1 A 1.2 V 2 µs DO-214AC (SMA) Not For New Designs -65°C ~ 175°C
GF1M-E3/5CA Vishay General Semiconductor 1000 V 1 A 1.2 V 2 µs DO-214BA (GF1) Active -65°C ~ 175°C
GF1M-E3/67A Vishay General Semiconductor 1000 V 1 A 1.2 V 2 µs DO-214BA (GF1) Active -65°C ~ 175°C
GF1M/1754 Vishay General Semiconductor 1000 V 1 A 1.2 V 2 µs DO-214BA (GF1) Active -65°C ~ 175°C
MRA4006T3G onsemi 800 V 1 A 1.1 V Standard DO-214AC (SMA) Not For New Designs -55°C ~ 175°C
MRA4007T3G onsemi 1000 V 1 A 1.1 V Standard DO-214AC (SMA) Not For New Designs -55°C ~ 175°C
S1M-M3/5AT Vishay General Semiconductor 1000 V 1 A 1.1 V 1.8 µs DO-214AC (SMA) Active -55°C ~ 150°C
S1M-M3/61T Vishay General Semiconductor 1000 V 1 A 1.1 V 1.8 µs DO-214AC (SMA) Active -55°C ~ 150°C

Engineering Selection Recommendations

Primary Substitutes (Full Electrical and Thermal Compatibility)

The following parts provide direct substitution with matching voltage ratings, current ratings, and operating temperature ranges:

GF1M-E3/5CA and GF1M-E3/67A (Vishay General Semiconductor) are Active status parts rated for 1000 V, 1 A with operating temperature range -65°C to 175°C, matching the US1ME-TP thermal envelope. Both use the DO-214BA (GF1) package, which is mechanically compatible with surface mount assembly. These parts are ROHS3 compliant and REACH unaffected.

GF1M/1754 (Vishay General Semiconductor) provides identical electrical specifications but carries RoHS non-compliant status, limiting its use to legacy system repairs where RoHS compliance is not required.

Secondary Substitutes (Voltage-Matched, Temperature-Constrained)

CGRA4007-G (Comchip Technology) and S1M-M3/5AT and S1M-M3/61T (Vishay General Semiconductor) are Active status parts rated for 1000 V, 1 A with operating temperature range -55°C to 150°C. These parts are suitable for applications operating within the -55°C to 150°C window. All are ROHS3 compliant and REACH unaffected. CGRA4007-G uses DO-214AC (SMA) package; S1M variants use DO-214AC (SMA) package.

Voltage-Reduced Substitutes (Current and Temperature-Matched)

GF1K-E3/67A (Vishay General Semiconductor) and MRA4006T3G (onsemi) are rated for 800 V, 1 A. These parts are suitable only for applications where the circuit voltage does not exceed 800 V. GF1K-E3/67A is Active status with -65°C to 175°C operating range. MRA4006T3G is Not For New Designs status with -55°C to 175°C operating range. Both are ROHS3 compliant and REACH unaffected.

Legacy Status Substitutes

GF1M (onsemi) and MRA4007T3G (onsemi) carry Not For New Designs status, indicating these manufacturers no longer recommend their use in new circuit designs. These parts are suitable for legacy system maintenance and repair only. Both are rated for 1000 V, 1 A with ROHS3 compliance and REACH unaffected status.

Frequently Asked Questions (FAQ)

Q: Can I substitute the US1ME-TP with a part rated for 800 V instead of 1000 V?

A: Substitution with 800 V rated parts (GF1K-E3/67A or MRA4006T3G) is acceptable only if the circuit design ensures the reverse voltage across the diode does not exceed 800 V under any operating condition, including transient overvoltage events. The original 1000 V rating provides additional safety margin.

Q: What is the difference between DO-214AC (SMA) and DO-214BA (GF1) packages?

A: Both packages are surface mount form factors compatible with automated assembly equipment. DO-214AC (SMA) and DO-214BA (GF1) have different physical dimensions and land patterns. Substitution between these packages requires PCB layout verification to confirm pad compatibility and thermal performance.

Q: Why do some substitutes have a forward voltage of 1.1 V while the US1ME-TP is rated at 1.7 V?

A: Forward voltage variation reflects differences in semiconductor material and junction design between manufacturers. Lower forward voltage (1.1 V) indicates improved efficiency and reduced power dissipation. This is a beneficial characteristic and does not prevent substitution.

Q: Can I use a substitute with a narrower operating temperature range (-55°C to 150°C) in place of the US1ME-TP (-65°C to 175°C)?

A: Substitution is acceptable if the application operates entirely within the -55°C to 150°C window. If the circuit must operate at temperatures below -55°C or above 150°C, use substitutes with matching or wider temperature ranges.

Q: What does "Not For New Designs" status mean?

A: Parts marked "Not For New Designs" are no longer recommended by the manufacturer for incorporation into new circuit designs. These parts remain suitable for maintenance, repair, and replacement of existing systems. For new designs, select Active status alternatives.

Q: Are all listed substitutes ROHS3 compliant?

A: All substitutes are ROHS3 compliant except GF1M/1754, which is RoHS non-compliant. Verify compliance requirements for your application before selecting a substitute.

Q: What is the significance of reverse recovery time (trr)?

A: Reverse recovery time indicates how quickly the diode transitions from conducting to blocking state. The US1ME-TP has fast recovery (75 ns). Substitutes with standard recovery (>500 ns or 1.8-2 µs) have slower transitions but remain functionally compatible for general-purpose rectification. Fast recovery is beneficial for high-frequency applications; standard recovery is acceptable for line-frequency and low-frequency applications.

Q: Can I mix different substitute parts in the same circuit?

A: Mixing different diode types in the same circuit is not recommended. Use a single part number throughout the circuit to ensure consistent electrical characteristics and thermal behavior.

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