US1M-13 Equivalent & Substitute Parts

Part Overview

The US1M-13 is a general-purpose rectifier diode rated for 1000 V DC reverse voltage and 1 A average rectified current in a surface mount SMA (DO-214AC) package. This part is discontinued at DiGi Electronics, necessitating identification of functionally equivalent alternatives for ongoing production and repair applications. Substitute parts must maintain electrical performance across voltage, current, recovery speed, and thermal specifications while meeting modern compliance standards.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	1000	V
Current - Average Rectified (Io)	1	A
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 1 A	V
Speed Classification	Fast Recovery ≤ 500ns, > 200mA (Io)	—
Reverse Recovery Time (trr)	75	ns
Current - Reverse Leakage @ Vr	5	µA @ 1000 V
Mounting Type	Surface Mount	—
Package / Case	DO-214AC, SMA	—
Operating Temperature - Junction	-65 to 150	°C

Substitute Part Grouping Explanation

Substitution eligibility is determined by strict equivalence across the following critical parameters:

Mandatory Equivalence Criteria:

Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 1 A
Package / Case: DO-214AC, SMA (surface mount)
Mounting Type: Surface Mount

Performance Characteristics:

Speed Classification: Fast Recovery (≤ 500ns, > 200mA) or Standard Recovery (> 500ns)
Reverse Recovery Time (trr): 75 ns (fast recovery) or 2 µs (standard recovery)
Forward Voltage (Vf): Range 1.0 V to 1.7 V @ 1 A
Reverse Leakage Current: 5 µA to 10 µA @ 1000 V

Compliance & Status:

RoHS Status: ROHS3 Compliant preferred for new designs
Product Status: Active preferred; Not For New Designs acceptable for legacy support
Moisture Sensitivity Level (MSL): 1 (Unlimited)

Substitute parts are grouped by recovery speed classification. Fast recovery devices (trr ≤ 500ns) provide direct functional replacement. Standard recovery devices (trr > 500ns) are listed as alternatives where application switching frequency permits.

Parameter Comparison

Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ 1A [V]	Speed	trr [ns]	Ir @ Vr [µA]	Package	Temp Range [°C]	RoHS Status	Product Status
US1M-13	Diodes Incorporated	1000	1	1.7	Fast Recovery ≤ 500ns	75	5 @ 1000V	DO-214AC, SMA	-65 to 150	Non-compliant	Discontinued
US1M-13-F	Diodes Incorporated	1000	1	1.7	Fast Recovery ≤ 500ns	75	5 @ 1000V	DO-214AC, SMA	-65 to 150	ROHS3 Compliant	Active
STTH110A	STMicroelectronics	1000	1	1.7	Fast Recovery ≤ 500ns	75	10 @ 1000V	DO-214AC, SMA	-55 to 175	ROHS3 Compliant	Active
CGRA4007-G	Comchip Technology	1000	1	1.1	Standard Recovery > 500ns	—	5 @ 1000V	DO-214AC, SMA	-55 to 150	ROHS3 Compliant	Active
CURA107-G	Comchip Technology	1000	1	1.7	Fast Recovery ≤ 500ns	75	5 @ 1000V	DO-214AC, SMA	-55 to 150	ROHS3 Compliant	Active
GF1M	onsemi	1000	1	1.2	Standard Recovery > 500ns	2000	5 @ 1000V	DO-214AC, SMA	-65 to 175	ROHS3 Compliant	Not For New Designs
GS1M-LTP	Micro Commercial Co	1000	1	1.0	Standard Recovery > 500ns	—	10 @ 1000V	DO-214AC, SMA	-55 to 150	ROHS3 Compliant	Active
MRA4007T3G	onsemi	1000	1	1.1	Standard Recovery > 500ns	—	10 @ 1000V	DO-214AC, SMA	-55 to 175	ROHS3 Compliant	Not For New Designs
RGF1M	onsemi	1000	1	1.3	Fast Recovery ≤ 500ns	500	5 @ 1000V	DO-214AC, SMA	-65 to 175	ROHS3 Compliant	Not For New Designs
RS1M	EVVO Semi	1000	1	1.3	Fast Recovery ≤ 500ns	500	5 @ 1 kV	DO-214AC, SMA	-55 to 150	ROHS3 Compliant	Active
S1M	EVVO Semi	1000	1	1.1	Standard Recovery > 500ns	—	5 @ 1 kV	DO-214AC, SMA	-55 to 150	ROHS3 Compliant	Active

Engineering Selection Recommendations

Primary Substitute (Direct Replacement):

US1M-13-F (Diodes Incorporated) is the direct equivalent with identical electrical specifications and packaging. This part maintains the fast recovery characteristic (75 ns trr), forward voltage of 1.7 V @ 1 A, and reverse leakage of 5 µA @ 1000 V. The primary distinction is ROHS3 compliance and active product status, making it suitable for new designs and ongoing production.

Fast Recovery Alternatives (≤ 500ns trr):

STTH110A (STMicroelectronics), CURA107-G (Comchip Technology), RGF1M (onsemi), and RS1M (EVVO Semi) maintain fast recovery performance. STTH110A and CURA107-G provide the closest electrical match with 75 ns recovery time. RGF1M and RS1M exhibit 500 ns recovery time, acceptable for applications where switching frequency does not demand sub-100 ns performance. All are ROHS3 compliant and available in active status except RGF1M (Not For New Designs).

Standard Recovery Alternatives (> 500ns trr):

CGRA4007-G (Comchip Technology), GF1M (onsemi), GS1M-LTP (Micro Commercial Co), MRA4007T3G (onsemi), and S1M (EVVO Semi) employ standard recovery characteristics. These parts are suitable for low-frequency rectification applications where switching speed is not performance-critical. Forward voltage ranges from 1.0 V to 1.2 V, offering improved efficiency in some applications. GF1M and MRA4007T3G carry "Not For New Designs" status; CGRA4007-G, GS1M-LTP, and S1M are active.

Compliance & Availability:

All substitute parts are ROHS3 compliant, REACH unaffected, and classified as MSL 1 (Unlimited). Inventory availability ranges from 5,394 to 935,300 units across suppliers, ensuring supply chain continuity.

Frequently Asked Questions (FAQ)

Q: Can US1M-13-F be used as a direct drop-in replacement for US1M-13?

A: Yes. US1M-13-F is electrically and mechanically identical to US1M-13, with identical voltage, current, recovery time, and package specifications. The primary difference is ROHS3 compliance and active product status. No circuit modifications are required.

Q: What is the difference between fast recovery and standard recovery diodes in this product category?

A: Fast recovery diodes (trr ≤ 500ns) exhibit shorter reverse recovery time, reducing switching losses and enabling operation at higher switching frequencies. Standard recovery diodes (trr > 500ns) are suitable for lower-frequency applications and typically offer lower forward voltage. Selection depends on application switching frequency and efficiency requirements.

Q: Are STTH110A and CURA107-G suitable replacements for high-frequency switching applications?

A: Yes. Both STTH110A and CURA107-G maintain 75 ns reverse recovery time, matching the original US1M-13 specification. They are suitable for applications requiring fast switching performance. STTH110A offers extended maximum junction temperature (175°C vs. 150°C), providing thermal margin in high-ambient environments.

Q: Can I use GS1M-LTP or S1M in place of US1M-13?

A: These parts are functionally compatible for low-frequency rectification. Both are standard recovery devices with forward voltage of 1.0 V to 1.1 V @ 1 A, offering lower conduction losses. However, their longer recovery time (> 500ns) makes them unsuitable for high-frequency switching applications where US1M-13's 75 ns recovery time is required.

Q: What is the significance of "Not For New Designs" status on GF1M, MRA4007T3G, and RGF1M?

A: "Not For New Designs" indicates these parts are in mature or declining production phases. While electrically functional and available in inventory, manufacturers recommend using active-status alternatives for new product development to ensure long-term supply continuity. These parts remain acceptable for legacy system support and repair.

Q: Do all substitute parts use the same DO-214AC (SMA) package?

A: Yes. All listed substitute parts employ the DO-214AC surface mount package, ensuring mechanical and thermal compatibility with existing PCB layouts. No footprint modifications are required.

Q: Which substitute offers the lowest forward voltage drop?

A: GS1M-LTP (Micro Commercial Co) specifies 1.0 V forward voltage @ 1 A, the lowest among all listed parts. This characteristic reduces conduction losses in rectification circuits. However, it is a standard recovery device; applications requiring fast recovery performance should select STTH110A, CURA107-G, or US1M-13-F.

Q: Are there temperature range differences I should consider?

A: Yes. STTH110A and RGF1M support maximum junction temperatures of 175°C, compared to 150°C for US1M-13. GF1M and MRA4007T3G also reach 175°C. Applications operating in high-temperature environments benefit from these extended ratings. Conversely, US1M-13 and most alternatives support -55°C minimum; US1M-13, GF1M, and RGF1M extend to -65°C for low-temperature operation.

Q: What is the reverse leakage current specification, and why does it vary?

A: Reverse leakage current (Ir) is specified at maximum reverse voltage (1000 V). US1M-13 specifies 5 µA; some alternatives specify 10 µA. This variation reflects manufacturing process differences and does not affect circuit functionality in typical applications. Lower leakage is advantageous in high-impedance circuits; higher leakage remains within acceptable limits for standard rectification.

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