US1J R3G Equivalent & Substitute Parts

Part Overview

The US1J R3G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 600 V DC reverse voltage and 1 A average rectified current in a surface mount DO-214AC (SMA) package. This part is discontinued at DiGi Electronics, necessitating identification of equivalent and substitute components for ongoing design requirements and production needs. Equivalent parts maintain identical electrical and mechanical specifications, while substitute parts provide functional alternatives with minor parameter variations within acceptable engineering tolerances.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	600	V
Current - Average Rectified (Io)	1	A
Voltage - Forward (Vf) (Max) @ If	1.7 @ 1 A	V
Speed Classification	Fast Recovery ≤ 500ns, > 200mA (Io)	—
Reverse Recovery Time (trr)	75	ns
Current - Reverse Leakage @ Vr	5	µA @ 600 V
Capacitance @ Vr, F	10	pF @ 4V, 1MHz
Package / Case	DO-214AC, SMA	—
Mounting Type	Surface Mount	—
Operating Temperature - Junction	-55 to 150	°C
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the US1J R3G is determined by strict equivalence in the following critical parameters:

Primary Equivalence Criteria:

Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature - Junction: -55°C to 150°C minimum

Secondary Compatibility Parameters:

Reverse Recovery Time (trr): Variations acceptable within fast recovery classification
Current - Reverse Leakage @ Vr: Variations acceptable within 5–10 µA @ 600 V range
Capacitance @ Vr, F: Variations acceptable within 10–45 pF @ 4V, 1MHz range
RoHS Status: ROHS3 Compliant or RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)

Parts are grouped as Parametric Equivalents when all primary criteria are met with minimal secondary parameter variation. Parts are grouped as Direct Manufacturers or Upgrades when they meet all primary criteria but offer enhanced specifications or extended temperature ranges. Parts are grouped as Similar when they meet primary voltage, current, and package criteria but exhibit notable variations in forward voltage or recovery characteristics.

Parameter Comparison

Manufacturer Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ If [V]	trr [ns]	Ir @ Vr [µA]	C @ Vr [pF]	Tj (Min–Max) [°C]	Product Status	RoHS Status
US1J R3G	Taiwan Semiconductor Corporation	600	1	1.7 @ 1 A	75	5 @ 600 V	10 @ 4V, 1MHz	-55 to 150	Discontinued	ROHS3 Compliant
ES1J	HY Electronic (Cayman) Limited	600	1	1.7 @ 1 A	35	5 @ 600 V	25 @ 4V, 1MHz	-55 to 150	Active	RoHS Compliant
ES1JH	Taiwan Semiconductor Corporation	600	1	1.7 @ 1 A	35	5 @ 600 V	16 @ 4V, 1MHz	-55 to 150	Active	ROHS3 Compliant
HS1J	Good-Ark Semiconductor	600	1	1.7 @ 1 A	75	5 @ 600 V	15 @ 4V, 1MHz	-55 to 150	Active	ROHS3 Compliant
US1J	SMC Diode Solutions	600	1	1.7 @ 1 A	75	5 @ 600 V	45 @ 4V, 1MHz	-55 to 150	Active	Not specified
US1JH	Taiwan Semiconductor Corporation	600	1	1.7 @ 1 A	75	5 @ 600 V	10 @ 4V, 1MHz	-55 to 150	Active	ROHS3 Compliant
US1J-13-F	Diodes Incorporated	600	1	1.7 @ 1 A	75	5 @ 600 V	10 @ 4V, 1MHz	-65 to 150	Active	ROHS3 Compliant
US1J-TP	Micro Commercial Co	600	1	1.7 @ 1 A	75	10 @ 600 V	10 @ 4V, 1MHz	-65 to 175	Active	ROHS3 Compliant
CGRA4005-G	Comchip Technology	600	1	1.1 @ 1 A	Not specified	5 @ 600 V	Not specified	-55 to 150	Active	ROHS3 Compliant
CSFA105-G	Comchip Technology	600	1	1.5 @ 1 A	35	5 @ 600 V	Not specified	-55 to 150	Active	ROHS3 Compliant
GS1J-LTP	Micro Commercial Co	600	1	1.0 @ 1 A	Not specified	10 @ 600 V	15 @ 4V, 1MHz	-55 to 150	Active	ROHS3 Compliant

Engineering Selection Recommendations

Parametric Equivalents (Direct Replacement):

ES1JH and US1JH are parametric equivalents manufactured by Taiwan Semiconductor Corporation with active product status and ROHS3 compliance. Both maintain identical voltage, current, and forward voltage specifications. ES1JH offers reduced reverse recovery time (35 ns versus 75 ns) and includes AEC-Q101 automotive qualification. US1JH provides identical electrical characteristics to the original US1J R3G with automotive-grade qualification. Both are suitable for direct substitution in applications requiring equivalent performance.

Direct Manufacturer Alternatives:

US1J-13-F (Diodes Incorporated) provides identical electrical specifications with extended lower operating temperature limit (-65°C versus -55°C) and active product status. This part is suitable for applications requiring enhanced low-temperature performance while maintaining all other electrical parameters.

Upgrade Options:

US1J-TP (Micro Commercial Co) offers extended upper operating temperature range (-65°C to 175°C versus -55°C to 150°C) with slightly elevated reverse leakage current (10 µA versus 5 µA @ 600 V). This part is appropriate for high-temperature applications where the original temperature range is insufficient.

Similar Alternatives:

CGRA4005-G and CSFA105-G (Comchip Technology) meet primary voltage, current, and package requirements but exhibit reduced forward voltage specifications (1.1 V and 1.5 V respectively versus 1.7 V). These parts are suitable for applications where lower forward voltage drop is beneficial. GS1J-LTP (Micro Commercial Co) features standard recovery speed classification (>500 ns) rather than fast recovery, making it suitable only for applications not requiring fast recovery characteristics.

ES1J (HY Electronic) provides parametric equivalence with reduced reverse recovery time (35 ns) and automotive qualification but carries REACH Affected status, requiring evaluation against supply chain compliance requirements.

Frequently Asked Questions (FAQ)

Q: Can ES1JH be used as a direct replacement for US1J R3G?

A: Yes. ES1JH meets all primary equivalence criteria: 600 V reverse voltage, 1 A average rectified current, 1.7 V forward voltage at 1 A, fast recovery speed classification, DO-214AC SMA package, and -55°C to 150°C operating temperature range. ES1JH is manufactured by Taiwan Semiconductor Corporation with active product status and ROHS3 compliance. The reduced reverse recovery time (35 ns versus 75 ns) represents improved performance within the fast recovery classification.

Q: What is the difference between parametric equivalents and similar alternatives?

A: Parametric equivalents maintain all primary electrical specifications: voltage rating, current rating, forward voltage, speed classification, and temperature range. Similar alternatives meet voltage, current, and package requirements but exhibit notable variations in forward voltage or recovery speed characteristics. Similar alternatives require application-specific evaluation to confirm functional compatibility.

Q: Does US1J-TP offer advantages over the original US1J R3G?

A: US1J-TP extends the upper operating temperature limit to 175°C (versus 150°C) and lower temperature limit to -65°C (versus -55°C), providing enhanced thermal range capability. Reverse leakage current is slightly elevated at 10 µA versus 5 µA @ 600 V. All other electrical parameters remain equivalent. US1J-TP is suitable for applications requiring extended temperature operation.

Q: Are there automotive-qualified alternatives available?

A: Yes. ES1JH and US1JH both carry AEC-Q101 automotive qualification with active product status. Both maintain identical electrical specifications to the original part and are suitable for automotive applications requiring qualified components.

Q: What packaging options are available for substitutes?

A: All substitute parts listed maintain the DO-214AC (SMA) surface mount package. Packaging variations exist only in supplier delivery format: Tape & Reel (TR), Cut Tape (CT) & Digi-Reel®, or unspecified. These delivery format variations do not affect component electrical or mechanical compatibility.

Q: Can CGRA4005-G or CSFA105-G be used in place of US1J R3G?

A: CGRA4005-G and CSFA105-G meet voltage, current, and package requirements but exhibit reduced forward voltage (1.1 V and 1.5 V respectively versus 1.7 V). These parts are suitable only for applications where lower forward voltage drop is acceptable or beneficial. Circuit performance may differ due to reduced voltage drop across the diode.

Q: What is the significance of reverse recovery time variation?

A: Reverse recovery time (trr) determines the speed at which the diode transitions from conducting to blocking state. The original US1J R3G specifies 75 ns within the fast recovery classification (≤500 ns). Substitutes with reduced trr (35 ns) provide faster switching transitions, which may reduce switching losses in high-frequency applications. Both 35 ns and 75 ns values remain within the fast recovery classification and are functionally compatible.

Q: Is RoHS compliance status critical for part selection?

A: RoHS compliance status should be evaluated against supply chain and regulatory requirements. The original US1J R3G is ROHS3 compliant. Most active substitutes maintain ROHS3 compliance. ES1J carries RoHS Compliant status (not ROHS3 specific). Confirm compliance requirements with procurement and regulatory departments before final part selection.

Q: What is the impact of capacitance variation among substitutes?

A: Capacitance variation (10 pF to 45 pF @ 4V, 1MHz) affects high-frequency circuit behavior and switching characteristics. The original US1J R3G specifies 10 pF. Substitutes with higher capacitance (US1J at 45 pF) may exhibit increased switching losses in high-frequency applications. For applications sensitive to capacitance effects, select substitutes with capacitance values closest to the original specification.

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