US1G Equivalent & Substitute Parts Reference

Part Overview

The US1G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 400 V DC reverse voltage and 1 A average rectified current in a DO-214AC (SMA) surface mount package. This part is discontinued at DiGi Electronics, necessitating identification of equivalent and substitute components for ongoing production and design requirements. Equivalent parts maintain identical electrical and mechanical specifications, while substitute parts offer functional compatibility within defined parameter tolerances for 400 V, 1 A rectifier applications.

Substiute Parts

US1G R3G
Taiwan Semiconductor CorporationIn Stock: 6446US1G R3G Datasheet
US1G R3G
Current Part
US1G
Diotec SemiconductorIn Stock: 27905US1G Datasheet
US1G
Parametric Equivalent
US1GH
Taiwan Semiconductor CorporationIn Stock: 16211US1GH Datasheet
US1GH
Parametric Equivalent
CGRA4004-G
Comchip TechnologyIn Stock: 20203CGRA4004-G Datasheet
CGRA4004-G
Similar
CURA104-G
Comchip TechnologyIn Stock: 1965CURA104-G Datasheet
CURA104-G
Similar
ES1G-13-F
Diodes IncorporatedIn Stock: 420370ES1G-13-F Datasheet
ES1G-13-F
Similar
GS1G-LTP
Micro Commercial CoIn Stock: 14366GS1G-LTP Datasheet
GS1G-LTP
Similar
GS2G-LTP
Micro Commercial CoIn Stock: 30669GS2G-LTP Datasheet
GS2G-LTP
Similar
RS1G-13-F
Diodes IncorporatedIn Stock: 115102RS1G-13-F Datasheet
RS1G-13-F
Similar
RS1GB-13-F
Diodes IncorporatedIn Stock: 1912RS1GB-13-F Datasheet
RS1GB-13-F
Similar
RS1GHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 8993RS1GHE3_A/H Datasheet
RS1GHE3_A/H
Similar
RS1GHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 5816RS1GHE3_A/I Datasheet
RS1GHE3_A/I
Similar
S1G-13-F
Diodes IncorporatedIn Stock: 156110S1G-13-F Datasheet
S1G-13-F
Similar
S1GB-13-F
Diodes IncorporatedIn Stock: 69736S1GB-13-F Datasheet
S1GB-13-F
Similar
S1GHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 188837S1GHE3_A/H Datasheet
S1GHE3_A/H
Similar
S1GHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 1055149S1GHE3_A/I Datasheet
S1GHE3_A/I
Similar
STTH1R04A
STMicroelectronicsIn Stock: 19331STTH1R04A Datasheet
STTH1R04A
Similar
STTH1R04AY
STMicroelectronicsIn Stock: 26262STTH1R04AY Datasheet
STTH1R04AY
Similar
UFS140JE3/TR13
Microchip TechnologyIn Stock: 940UFS140JE3/TR13 Datasheet
UFS140JE3/TR13
Similar
US1G-13-F
Diodes IncorporatedIn Stock: 155328US1G-13-F Datasheet
US1G-13-F
Similar
US1G-TP
Micro Commercial CoIn Stock: 19143US1G-TP Datasheet
US1G-TP
Similar
US2GA-TP
Micro Commercial CoIn Stock: 2323US2GA-TP Datasheet
US2GA-TP
Similar
US1G-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 3107US1G-E3/5AT Datasheet
US1G-E3/5AT
Parametric Equivalent
US1G-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 178661US1G-E3/61T Datasheet
US1G-E3/61T
Parametric Equivalent
US1G-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 16224US1G-M3/5AT Datasheet
US1G-M3/5AT
Parametric Equivalent
US1G-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 9486US1G-M3/61T Datasheet
US1G-M3/61T
Parametric Equivalent
US1GHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 59196US1GHE3_A/H Datasheet
US1GHE3_A/H
Parametric Equivalent
US1GHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 26827US1GHE3_A/I Datasheet
US1GHE3_A/I
Parametric Equivalent
US1GHM3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 823US1GHM3_A/H Datasheet
US1GHM3_A/H
Parametric Equivalent
US1GHM3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 1046US1GHM3_A/I Datasheet
US1GHM3_A/I
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 400 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A
Reverse Recovery Time (trr) 50 ns
Current - Reverse Leakage @ Vr 5 µA @ 400 V
Package / Case DO-214AC, SMA
Mounting Type Surface Mount
Operating Temperature - Junction -55 to 150 °C
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the US1G is determined by the following critical parameters:

Mandatory Matching Parameters:

  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1 A
  • Package / Case: DO-214AC (SMA) or compatible surface mount package
  • Mounting Type: Surface Mount

Allowable Variation Parameters:

  • Voltage - Forward (Vf) (Max) @ If: 1.0 V to 1.3 V @ 1 A
  • Reverse Recovery Time (trr): 25 ns to 150 ns (fast recovery ≤500 ns or standard recovery >500 ns acceptable)
  • Current - Reverse Leakage @ Vr: 5 µA to 10 µA @ 400 V
  • Operating Temperature - Junction: -65°C to -50°C minimum; 150°C maximum

Parts are classified as Parametric Equivalent when all electrical specifications match the US1G exactly. Parts are classified as Similar when they meet the mandatory parameters but exhibit variations in forward voltage, recovery time, or leakage current within acceptable engineering tolerances for general-purpose rectification.

Parameter Comparison

Manufacturer Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ If [V] trr [ns] Ir @ Vr [µA] Package Product Status
US1G Taiwan Semiconductor Corporation 400 1 1.0 @ 1 A 50 5 @ 400 V DO-214AC (SMA) Discontinued
US1G Diotec Semiconductor 400 1 1.25 @ 1 A 50 5 @ 400 V DO-214AC (SMA) Active
US1GH Taiwan Semiconductor Corporation 400 1 1.0 @ 1 A 50 5 @ 400 V DO-214AC (SMA) Active
CGRA4004-G Comchip Technology 400 1 1.1 @ 1 A 5 @ 400 V DO-214AC (SMA) Active
CURA104-G Comchip Technology 400 1 1.3 @ 1 A 50 5 @ 400 V DO-214AC (SMA) Active
ES1G-13-F Diodes Incorporated 400 1 1.25 @ 1 A 25 5 @ 400 V DO-214AC (SMA) Active
GS1G-LTP Micro Commercial Co 400 1 1.0 @ 1 A 10 @ 400 V DO-214AC (SMA) Not For New Designs
RS1G-13-F Diodes Incorporated 400 1 1.3 @ 1 A 150 5 @ 400 V DO-214AC (SMA) Active
RS1GB-13-F Diodes Incorporated 400 1 1.3 @ 1 A 150 5 @ 400 V DO-214AA (SMB) Active
RS1GHE3_A/H Vishay General Semiconductor - Diodes Division 400 1 1.3 @ 1 A 150 5 @ 400 V DO-214AC (SMA) Active

Engineering Selection Recommendations

Parametric Equivalent (Direct Replacement):

The US1G manufactured by Diotec Semiconductor and the US1GH manufactured by Taiwan Semiconductor Corporation are parametric equivalents. The US1GH is recommended as the primary replacement, as it is manufactured by the original supplier (Taiwan Semiconductor Corporation), maintains identical electrical specifications (1.0 V forward voltage, 50 ns recovery time), and carries Active product status. The US1GH is available in Tape & Reel packaging and is ROHS3 compliant with AEC-Q101 automotive qualification.

The US1G from Diotec Semiconductor is also a parametric equivalent with identical voltage and current ratings, though forward voltage is specified at 1.25 V @ 1 A. This part is Active and ROHS3 compliant, with higher inventory availability (27,800 pcs).

Active Substitute Parts (Compatible for General-Purpose Rectification):

ES1G-13-F (Diodes Incorporated) is an active substitute with identical 400 V / 1 A ratings, 1.25 V forward voltage, and superior reverse recovery time of 25 ns. This part is suitable for applications requiring faster switching performance and is available in high volume (420,300 pcs).

RS1GHE3_A/H (Vishay General Semiconductor - Diodes Division) is an active substitute with AEC-Q101 automotive qualification, identical voltage and current ratings, and 1.3 V forward voltage. This part is recommended for automotive applications requiring established qualification status.

CURA104-G (Comchip Technology) is an active substitute with identical 400 V / 1 A ratings, 50 ns recovery time, and 1.3 V forward voltage. This part is suitable for fast-recovery applications.

Discontinued or Not For New Designs:

GS1G-LTP (Micro Commercial Co) is marked "Not For New Designs" and should not be selected for new production. This part exhibits 10 µA reverse leakage current, which exceeds the 5 µA specification of the US1G.

GS2G-LTP (Micro Commercial Co) is a 2 A rated device and is not suitable as a direct substitute for 1 A applications.

Package Compatibility Note:

RS1GB-13-F uses DO-214AA (SMB) package, which is physically larger than the DO-214AC (SMA) package of the US1G. This part is not recommended for applications with space constraints or existing PCB layouts designed for SMA packages.

Frequently Asked Questions (FAQ)

Q: Can I use US1GH as a direct replacement for the discontinued US1G?

A: Yes. The US1GH is a parametric equivalent manufactured by Taiwan Semiconductor Corporation with identical electrical specifications: 400 V reverse voltage, 1 A average rectified current, 1.0 V forward voltage @ 1 A, and 50 ns reverse recovery time. The primary difference is packaging format (Tape & Reel vs. Cut Tape), which does not affect component performance. US1GH is Active and recommended as the primary replacement.

Q: What is the difference between "Parametric Equivalent" and "Similar" substitute parts?

A: Parametric Equivalent parts match all electrical specifications of the US1G exactly. Similar substitute parts meet the mandatory requirements (400 V, 1 A, DO-214AC package) but exhibit variations in forward voltage (up to 1.3 V), reverse recovery time (25 ns to 150 ns), or reverse leakage current (up to 10 µA). Similar parts are functionally compatible for general-purpose rectification but may exhibit different thermal or switching characteristics.

Q: Can I substitute a part with higher forward voltage (1.3 V instead of 1.0 V)?

A: Yes, within the defined tolerance range. Parts with 1.3 V forward voltage (such as RS1G-13-F, CURA104-G, and RS1GHE3_A/H) are acceptable substitutes. The higher forward voltage results in slightly increased power dissipation in the diode. Verify that the application circuit can tolerate this additional heat generation and voltage drop.

Q: What does "Fast Recovery ≤500ns" mean, and does it matter for my application?

A: Recovery time is the interval required for a diode to transition from conducting to blocking state. Fast recovery (≤500 ns) is suitable for switching applications and high-frequency rectification. Standard recovery (>500 ns) is acceptable for line-frequency or low-frequency rectification. The US1G specifies 50 ns recovery time, which is fast recovery. Substitute parts with recovery times up to 150 ns remain within fast-recovery classification and are suitable for the same applications.

Q: Why is GS1G-LTP listed as "Not For New Designs"?

A: GS1G-LTP is a legacy part with discontinued design status. While it meets the 400 V / 1 A specifications, it exhibits 10 µA reverse leakage current compared to the 5 µA specification of the US1G. New designs should not incorporate parts marked "Not For New Designs" to ensure long-term supply availability and consistent performance.

Q: Can I use RS1GB-13-F (SMB package) instead of the SMA package US1G?

A: RS1GB-13-F uses DO-214AA (SMB) package, which is physically larger than the DO-214AC (SMA) package. This part is not recommended for applications with existing PCB layouts designed for SMA packages. SMB packages require different footprints and cannot be directly substituted without PCB redesign.

Q: What is AEC-Q101 qualification, and why does it matter?

A: AEC-Q101 is an automotive industry qualification standard for discrete semiconductors. Parts with AEC-Q101 qualification (such as US1GH and RS1GHE3_A/H) have undergone rigorous testing for automotive applications and are suitable for use in automotive circuits. Non-qualified parts may not meet automotive reliability requirements.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All parts listed in this reference are ROHS3 compliant, indicating compliance with the Restriction of Hazardous Substances Directive. This compliance is mandatory for most commercial and industrial applications.

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