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US1DHM3_A/H Equivalent & Substitute Parts
Part Overview
The US1DHM3_A/H is a general-purpose rectifier diode manufactured by Vishay General Semiconductor - Diodes Division. This surface mount diode operates at 200 V DC reverse voltage with 1 A average rectified current in a DO-214AC (SMA) package. The device features fast recovery characteristics with a reverse recovery time of 50 ns and is qualified to AEC-Q101 automotive standards.
Equivalent and substitute parts are necessary when the primary part number becomes unavailable, when alternative packaging formats are required for manufacturing processes, or when sourcing from multiple suppliers is required for supply chain continuity. This reference provides direct parametric equivalents that maintain electrical and mechanical compatibility.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 200 | V |
| Current - Average Rectified (Io) | 1 | A |
| Voltage - Forward (Vf) (Max) @ If | 1 | V @ 1 A |
| Reverse Recovery Time (trr) | 50 | ns |
| Current - Reverse Leakage @ Vr | 10 | µA @ 200 V |
| Capacitance @ Vr, F | 15 | pF @ 4V, 1MHz |
| Package / Case | DO-214AC, SMA | |
| Operating Temperature - Junction | -55 to 150 | °C |
| Mounting Type | Surface Mount | |
| Technology | Standard | |
| Speed Classification | Fast Recovery ≤ 500ns, > 200mA (Io) |
Substitute Part Grouping Explanation
Substitution of the US1DHM3_A/H is determined by strict equivalence across the following critical parameters:
Electrical Parameters (Must Match):
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 1 A
- Reverse Recovery Time (trr): 50 ns
- Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)
Mechanical Parameters (Must Match):
- Package / Case: DO-214AC, SMA
- Mounting Type: Surface Mount
- Operating Temperature Range: -55°C to 150°C
Secondary Parameters (Acceptable Variation):
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A (acceptable range based on manufacturer specifications)
- Current - Reverse Leakage @ Vr: 10 µA @ 200 V (some substitutes specify 5 µA or 1 µA, which are superior performance)
- Capacitance @ Vr, F: 15 pF @ 4V, 1MHz (acceptable range 15–20 pF)
Packaging Format Variations: Substitutes are grouped by packaging format: Tape & Reel (TR), Cut Tape (CT), and Bag. These represent different supply configurations of the same electrical component and are interchangeable for circuit design purposes.
Compliance & Qualification: The main part US1DHM3_A/H carries AEC-Q101 automotive qualification. Substitute parts with identical AEC-Q101 qualification are direct replacements for automotive applications. Parts without automotive qualification are suitable for general-purpose applications only.
Parameter Comparison
| Manufacturer Part Number | Manufacturer | Vr (Max) [V] | Io [A] | Vf (Max) @ If [V] | trr [ns] | Ir @ Vr [µA] | C @ Vr [pF] | Package | Packaging Format | AEC-Q101 | Product Status |
|---|---|---|---|---|---|---|---|---|---|---|---|
| US1DHM3_A/H | Vishay General Semiconductor - Diodes Division | 200 | 1 | 1 @ 1 A | 50 | 10 @ 200 V | 15 @ 4V, 1MHz | DO-214AC, SMA | Tape & Reel (TR) | Yes | Active |
| US1D-E3/5AT | Vishay General Semiconductor - Diodes Division | 200 | 1 | 1 @ 1 A | 50 | 10 @ 200 V | 15 @ 4V, 1MHz | DO-214AC, SMA | Tape & Reel (TR) | No | Active |
| US1D-E3/61T | Vishay General Semiconductor - Diodes Division | 200 | 1 | 1 @ 1 A | 50 | 10 @ 200 V | 15 @ 4V, 1MHz | DO-214AC, SMA | Cut Tape (CT) | No | Active |
| US1DHE3_A/H | Vishay General Semiconductor - Diodes Division | 200 | 1 | 1 @ 1 A | 50 | 10 @ 200 V | 15 @ 4V, 1MHz | DO-214AC, SMA | Tape & Reel (TR) | Yes | Active |
| HS1D | SURGE | 200 | 1 | 1 @ 1 A | 50 | 5 @ 200 V | 20 @ 4V, 1MHz | DO-214AC, SMA | Bag | No | Active |
| HS1D R3G | Taiwan Semiconductor Corporation | 200 | 1 | 1 @ 1 A | 50 | 5 @ 200 V | 15 @ 4V, 1MHz | DO-214AC, SMA | Cut Tape (CT) | No | Discontinued at DiGi Electronics |
| US1D | SMC Diode Solutions | 200 | 1 | Not specified | Not specified | Not specified | Not specified | DO-214AC, SMA | Cut Tape (CT) & Digi-Reel® | No | Active |
| US1D R3G | Taiwan Semiconductor Corporation | 200 | 1 | 1 @ 1 A | 50 | 5 @ 200 V | 15 @ 4V, 1MHz | DO-214AC, SMA | Tape & Reel (TR) | No | Discontinued at DiGi Electronics |
| US1D-A | ANBON SEMICONDUCTOR (INT'L) LIMITED | 200 | 1 | 1 @ 1 A | 50 | 5 @ 200 V | 15 @ 4V, 1MHz | DO-214AC, SMA | Tape & Reel (TR) | No | Active |
| US1DH | Taiwan Semiconductor Corporation | 200 | 1 | 1 @ 1 A | 50 | 5 @ 200 V | 15 @ 4V, 1MHz | DO-214AC, SMA | Tape & Reel (TR) | Yes | Active |
| US1D_R1_00001 | Panjit International Inc. | 200 | 1 | 1 @ 1 A | 50 | 1 @ 200 V | 17 @ 4V, 1MHz | DO-214AC, SMA | Tape & Reel (TR) | No | Active |
Engineering Selection Recommendations
For Automotive Applications (AEC-Q101 Required):
Use US1DHE3_A/H or US1DH as direct replacements for the US1DHM3_A/H. Both parts carry AEC-Q101 automotive qualification and maintain identical electrical specifications. US1DHE3_A/H is supplied in Tape & Reel format matching the original part configuration. US1DH is also supplied in Tape & Reel format and is manufactured by Taiwan Semiconductor Corporation.
For General-Purpose Applications (Non-Automotive):
US1D-E3/5AT and US1D-E3/61T are parametric equivalents from Vishay General Semiconductor - Diodes Division. US1D-E3/5AT is supplied in Tape & Reel format with 5,973 units in stock. US1D-E3/61T is supplied in Cut Tape format with 83,847 units in stock, offering the highest inventory availability.
Alternative suppliers include US1D-A (ANBON SEMICONDUCTOR), US1DH (Taiwan Semiconductor Corporation), and US1D_R1_00001 (Panjit International Inc.). All maintain the required 200 V, 1 A, 50 ns specifications and DO-214AC package.
Packaging Format Considerations:
Tape & Reel (TR) format is standard for high-volume automated assembly. Cut Tape (CT) format is suitable for lower-volume or mixed-component pick-and-place operations. Bag format (HS1D) is used for manual assembly or reel consolidation.
Reverse Leakage Current Variation:
The main part US1DHM3_A/H specifies 10 µA reverse leakage at 200 V. Substitute parts from Taiwan Semiconductor Corporation (HS1D R3G, US1D R3G, US1DH) and ANBON SEMICONDUCTOR (US1D-A) specify 5 µA, representing superior leakage performance. Panjit International Inc. (US1D_R1_00001) specifies 1 µA, the lowest leakage current among all listed substitutes. These lower leakage values are acceptable and do not restrict substitution.
Discontinued Parts:
HS1D R3G and US1D R3G are discontinued at DiGi Electronics. These parts remain available through alternative distribution channels but should not be selected for new designs requiring long-term supply assurance.
Frequently Asked Questions (FAQ)
Q: Can US1D-E3/61T be used in place of US1DHM3_A/H?
A: US1D-E3/61T is a parametric equivalent with identical electrical specifications (200 V, 1 A, 50 ns reverse recovery time) and the same DO-214AC package. The primary difference is packaging format: US1D-E3/61T is supplied in Cut Tape (CT) while US1DHM3_A/H is supplied in Tape & Reel (TR). For automated assembly requiring reel format, use US1D-E3/5AT instead. For manual assembly or mixed-component operations, US1D-E3/61T is suitable.
Q: Is US1DHE3_A/H a direct replacement for US1DHM3_A/H?
A: Yes. US1DHE3_A/H is a direct replacement. Both parts are manufactured by Vishay General Semiconductor - Diodes Division, carry AEC-Q101 automotive qualification, are supplied in Tape & Reel format, and maintain identical electrical and mechanical specifications.
Q: What is the difference between US1D_R1_00001 and the main part?
A: US1D_R1_00001 is manufactured by Panjit International Inc. and differs in reverse leakage current (1 µA versus 10 µA) and capacitance (17 pF versus 15 pF). These differences represent superior performance characteristics. All other electrical parameters and the DO-214AC package are identical. US1D_R1_00001 does not carry AEC-Q101 qualification and is suitable for general-purpose applications only.
Q: Why do some substitutes specify lower reverse leakage current?
A: Reverse leakage current is a manufacturing characteristic that varies by supplier and process. Lower reverse leakage (5 µA or 1 µA) indicates superior device performance and is acceptable for substitution. The main part specification of 10 µA represents the maximum allowable leakage; lower values do not restrict circuit compatibility.
Q: Can I use HS1D from SURGE as a substitute?
A: HS1D is a parametric equivalent with 200 V, 1 A, 50 ns specifications and DO-214AC package. However, HS1D is supplied in Bag format rather than Tape & Reel, which may require process adjustment for automated assembly. HS1D does not carry AEC-Q101 qualification and is suitable for general-purpose applications. Reverse leakage is specified at 5 µA (superior to the main part) and capacitance at 20 pF (within acceptable range).
Q: What does "Discontinued at DiGi Electronics" mean for HS1D R3G and US1D R3G?
A: "Discontinued at DiGi Electronics" indicates that these parts are no longer actively stocked or promoted by DiGi Electronics as a distributor. However, the parts remain in production and may be available through alternative distribution channels. For new designs requiring long-term supply assurance, select active parts such as US1D-E3/5AT, US1D-E3/61T, US1DHE3_A/H, or US1DH.
Q: Are all substitute parts RoHS3 compliant?
A: All listed substitute parts are RoHS3 compliant, matching the compliance status of the main part US1DHM3_A/H.
Q: Which substitute offers the highest inventory availability?
A: US1D-E3/61T offers the highest inventory availability with 83,847 units in stock. This part is supplied in Cut Tape format by Vishay General Semiconductor - Diodes Division and maintains full parametric equivalence to the main part.
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