US1B-TP Equivalent & Substitute Parts

Part Overview

The US1B-TP is a general-purpose rectifier diode manufactured by Micro Commercial Co, rated for 100 V DC reverse voltage and 1 A average rectified current in a DO-214AC (SMA) surface mount package. This component is classified as "Not For New Designs," indicating it has reached end-of-life status. Identifying equivalent and substitute parts is necessary for ongoing maintenance, repair, and legacy system support where the original part is no longer available or procurement is limited.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	100	V
Current - Average Rectified (Io)	1	A
Voltage - Forward (Vf) (Max) @ If	1 V @ 1 A	V @ A
Speed Classification	Fast Recovery ≤ 500ns, > 200mA (Io)	—
Reverse Recovery Time (trr)	50	ns
Current - Reverse Leakage @ Vr	10	µA @ 100 V
Package / Case	DO-214AC, SMA	—
Operating Temperature - Junction	-65°C ~ 175°C	°C
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the US1B-TP is determined by the following critical parameters:

Mandatory Matching Criteria:

Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 1 A
Package / Case: DO-214AC (SMA) or compatible surface mount package
Mounting Type: Surface Mount
RoHS Status: ROHS3 Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)

Performance Parameters (Allowable Variation):

Voltage - Forward (Vf) (Max) @ If: 0.9 V to 1.3 V @ 1 A
Speed Classification: Fast Recovery (≤ 500ns) or Standard Recovery (> 500ns)
Reverse Recovery Time (trr): 25 ns to 2 µs
Current - Reverse Leakage @ Vr: 1 µA to 10 µA @ 100 V
Operating Temperature - Junction: -55°C to -65°C (minimum) and 150°C to 175°C (maximum)

Substitute parts meeting these criteria are functionally equivalent for general-purpose rectification applications. Parts with different package types (DO-214BA) or non-compliant certifications are excluded from direct substitution.

Parameter Comparison

Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ 1A [V]	Speed	trr [ns]	Ir @ Vr [µA]	Package	Tj (°C)	Status
US1B-TP	Micro Commercial Co	100	1	1.0	Fast Recovery ≤ 500ns	50	10 @ 100V	DO-214AC (SMA)	-65 ~ 175	Not For New Designs
CGRA4002-G	Comchip Technology	100	1	1.1	Fast Recovery ≤ 500ns	—	5 @ 100V	DO-214AC (SMA)	-55 ~ 150	Active
ES1B	YAGEO	100	1	0.95	—	—	—	DO-214AC (SMA)	—	Active
ES1B-13-F	Diodes Incorporated	100	1	0.92	Fast Recovery ≤ 500ns	25	5 @ 100V	DO-214AC (SMA)	-55 ~ 150	Active
ES1B-E3/61T	Vishay General Semiconductor - Diodes Division	100	1	0.92	Fast Recovery ≤ 500ns	25	5 @ 100V	DO-214AC (SMA)	-55 ~ 150	Active
ESH1B-E3/5AT	Vishay General Semiconductor - Diodes Division	100	1	0.90	Fast Recovery ≤ 500ns	25	1 @ 100V	DO-214AC (SMA)	-55 ~ 175	Active
ESH1B-E3/61T	Vishay General Semiconductor - Diodes Division	100	1	0.90	Fast Recovery ≤ 500ns	25	1 @ 100V	DO-214AC (SMA)	-55 ~ 175	Active
GF1B	onsemi	100	1	1.0	Standard Recovery > 500ns	2000	5 @ 100V	DO-214AC (SMA)	-65 ~ 175	Not For New Designs
GF1B-E3/5CA	Vishay General Semiconductor - Diodes Division	100	1	1.1	Standard Recovery > 500ns	2000	5 @ 100V	DO-214BA	-65 ~ 175	Active
GF1B-E3/67A	Vishay General Semiconductor - Diodes Division	100	1	1.1	Standard Recovery > 500ns	2000	5 @ 100V	DO-214BA	-65 ~ 175	Not For New Designs
RS1B-M3/5AT	Vishay General Semiconductor - Diodes Division	100	1	1.3	Fast Recovery ≤ 500ns	150	5 @ 100V	DO-214AC (SMA)	-55 ~ 150	Active

Engineering Selection Recommendations

Direct Substitutes (DO-214AC Package, Active Status):

The following parts are recommended as direct substitutes for the US1B-TP in new procurement and ongoing system support:

ES1B-13-F (Diodes Incorporated): Active product status with fast recovery characteristics (25 ns trr), lower forward voltage (0.92 V), and reduced reverse leakage (5 µA). Operating temperature range -55°C to 150°C is suitable for most applications within the US1B-TP's specified range.
ES1B-E3/61T (Vishay General Semiconductor - Diodes Division): Active product with identical electrical performance to ES1B-13-F, offering fast recovery operation and improved reverse leakage characteristics.
ESH1B-E3/5AT and ESH1B-E3/61T (Vishay General Semiconductor - Diodes Division): Active products with superior reverse leakage performance (1 µA) and extended upper temperature rating to 175°C, matching the US1B-TP's maximum junction temperature. Fast recovery characteristics ensure compatibility with high-frequency switching applications.
CGRA4002-G (Comchip Technology): Active product with fast recovery operation and forward voltage of 1.1 V, providing a close electrical match to the US1B-TP.
RS1B-M3/5AT (Vishay General Semiconductor - Diodes Division): Active product with fast recovery characteristics and higher forward voltage (1.3 V), suitable for applications where forward voltage drop is not critical.

Alternative Substitutes (Different Package or Legacy Status):

GF1B (onsemi): Not For New Designs status. Standard recovery diode with 2 µs reverse recovery time. DO-214AC package compatibility maintained. Use only for legacy system maintenance where fast recovery is not required.
GF1B-E3/5CA and GF1B-E3/67A (Vishay General Semiconductor - Diodes Division): DO-214BA package (different from US1B-TP DO-214AC). Standard recovery characteristics with 2 µs reverse recovery time. GF1B-E3/5CA is Active; GF1B-E3/67A is Not For New Designs. Package difference requires PCB layout verification before implementation.

Compliance and Certification:

All recommended substitute parts maintain ROHS3 compliance, MSL Level 1 (Unlimited), and REACH Unaffected status, ensuring regulatory alignment with the original US1B-TP specification.

Frequently Asked Questions (FAQ)

Q: Can ES1B-13-F directly replace US1B-TP without circuit modification?

A: ES1B-13-F is electrically compatible with US1B-TP for general-purpose rectification. Both parts share the same 100 V / 1 A ratings, DO-214AC package, and fast recovery characteristics. The forward voltage difference (0.92 V vs. 1.0 V) is within acceptable tolerance for most applications. Verify circuit performance if forward voltage drop is critical to system operation.

Q: What is the difference between fast recovery and standard recovery diodes?

A: Fast recovery diodes (≤ 500 ns reverse recovery time) are designed for high-frequency switching applications and reduce switching losses. Standard recovery diodes (> 500 ns) are suitable for lower-frequency rectification. The US1B-TP is a fast recovery device. Substitutes with standard recovery characteristics (GF1B series) may introduce additional switching losses in high-frequency circuits.

Q: Why do some substitute parts have different operating temperature ranges?

A: Operating temperature range depends on semiconductor manufacturing process and device design. The US1B-TP specifies -65°C to 175°C. Substitutes with -55°C to 150°C ranges are suitable for most commercial and industrial applications but may not meet requirements for extended temperature environments. ESH1B series parts extend to 175°C maximum, matching the US1B-TP specification.

Q: Are GF1B-E3/5CA and GF1B-E3/67A suitable substitutes despite different package designation?

A: GF1B-E3/5CA and GF1B-E3/67A use DO-214BA package, which differs from the US1B-TP's DO-214AC (SMA) package. While both are surface mount packages with similar footprints, PCB layout and land pattern verification is required before implementation. These parts are not recommended as direct drop-in replacements without design review.

Q: What does "Not For New Designs" status mean for the US1B-TP and GF1B?

A: "Not For New Designs" indicates the manufacturer has discontinued active development and support for these parts. They remain available from existing inventory but are not recommended for new product development. For new designs, select from Active status parts such as ES1B-13-F, ESH1B series, or CGRA4002-G.

Q: How does reverse leakage current affect circuit performance?

A: Reverse leakage current (Ir) represents the small current flowing through the diode in reverse bias. Lower leakage (1 µA in ESH1B series vs. 10 µA in US1B-TP) reduces power dissipation and improves circuit efficiency, particularly in low-power or precision applications. For general-purpose rectification, the difference is typically negligible.

Q: Can RS1B-M3/5AT be used in place of US1B-TP if forward voltage is not a concern?

A: RS1B-M3/5AT is electrically compatible with US1B-TP for 100 V / 1 A rectification. However, its higher forward voltage (1.3 V vs. 1.0 V) results in increased power dissipation. Use RS1B-M3/5AT only in applications where forward voltage drop does not impact thermal management or circuit efficiency.

Q: What is the significance of capacitance specifications in the parameter table?

A: Capacitance at reverse voltage (Cj) affects high-frequency switching performance and parasitic effects. Lower capacitance reduces switching losses and improves frequency response. The US1B-TP specifies 20 pF at 4 V, 1 MHz. Substitutes with lower capacitance (10 pF in ES1B-13-F and ESH1B series) offer improved high-frequency performance.

Q: Are YAGEO ES1B parts suitable for critical applications?

A: YAGEO ES1B is an Active product with 100 V / 1 A ratings and DO-214AC package compatibility. However, limited electrical parameter data is provided in the specification. For applications requiring complete electrical characterization, select parts with comprehensive datasheets such as ES1B-13-F (Diodes Incorporated) or ESH1B series (Vishay).

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