US1B M2G Equivalent & Substitute Parts

Part Overview

The US1B M2G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 100 V DC reverse voltage and 1 A average rectified current in a surface mount DO-214AC (SMA) package. This component is classified as discontinued at DiGi Electronics, which necessitates identification of equivalent and substitute parts for ongoing design support and procurement.

The US1B M2G operates across a junction temperature range of -55°C to 150°C and features fast recovery characteristics with a reverse recovery time of 50 ns. It is RoHS3 compliant and carries unlimited moisture sensitivity level (MSL 1), making it suitable for standard industrial and commercial applications.

Substiute Parts

US1B M2G
Taiwan Semiconductor CorporationIn Stock: 746US1B M2G Datasheet
US1B M2G
Current Part
HS1B
Taiwan Semiconductor CorporationIn Stock: 1136HS1B Datasheet
HS1B
Parametric Equivalent
HS1B R3G
Taiwan Semiconductor CorporationIn Stock: 3555HS1B R3G Datasheet
HS1B R3G
Parametric Equivalent
US1B
Taiwan Semiconductor CorporationIn Stock: 95318US1B Datasheet
US1B
Parametric Equivalent
US1B R3G
Taiwan Semiconductor CorporationIn Stock: 1248US1B R3G Datasheet
US1B R3G
Parametric Equivalent
US1BH
Taiwan Semiconductor CorporationIn Stock: 924US1BH Datasheet
US1BH
Parametric Equivalent
US1B-13-F
Diodes IncorporatedIn Stock: 142770US1B-13-F Datasheet
US1B-13-F
Direct
CGRA4002-G
Comchip TechnologyIn Stock: 967CGRA4002-G Datasheet
CGRA4002-G
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ES1B-13-F
Diodes IncorporatedIn Stock: 35153ES1B-13-F Datasheet
ES1B-13-F
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ES1B-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 27131ES1B-E3/5AT Datasheet
ES1B-E3/5AT
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ES1B-LTP
Micro Commercial CoIn Stock: 17292ES1B-LTP Datasheet
ES1B-LTP
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ES1B-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 917ES1B-M3/5AT Datasheet
ES1B-M3/5AT
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ES1B-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 762ES1B-M3/61T Datasheet
ES1B-M3/61T
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ES1BHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 7233ES1BHE3_A/H Datasheet
ES1BHE3_A/H
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ES1BHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 8375ES1BHE3_A/I Datasheet
ES1BHE3_A/I
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ESH1B-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 920ESH1B-E3/5AT Datasheet
ESH1B-E3/5AT
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ESH1B-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 10156ESH1B-E3/61T Datasheet
ESH1B-E3/61T
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ESH1B-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 742ESH1B-M3/5AT Datasheet
ESH1B-M3/5AT
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ESH1B-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 844ESH1B-M3/61T Datasheet
ESH1B-M3/61T
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GS1B-LTP
Micro Commercial CoIn Stock: 21523GS1B-LTP Datasheet
GS1B-LTP
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RS1B-13-F
Diodes IncorporatedIn Stock: 55344RS1B-13-F Datasheet
RS1B-13-F
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RS1BHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 1121RS1BHE3_A/H Datasheet
RS1BHE3_A/H
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RS1BHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 795RS1BHE3_A/I Datasheet
RS1BHE3_A/I
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S1B-13-F
Diodes IncorporatedIn Stock: 15133S1B-13-F Datasheet
S1B-13-F
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S1BB-13-F
Diodes IncorporatedIn Stock: 26267S1BB-13-F Datasheet
S1BB-13-F
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S1BHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 21489S1BHE3_A/H Datasheet
S1BHE3_A/H
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S1BHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 748S1BHE3_A/I Datasheet
S1BHE3_A/I
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UH1BHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 1111UH1BHE3_A/H Datasheet
UH1BHE3_A/H
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UH1BHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 732UH1BHE3_A/I Datasheet
UH1BHE3_A/I
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US1B-TP
Micro Commercial CoIn Stock: 56481US1B-TP Datasheet
US1B-TP
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VS-1EMH01-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 25289VS-1EMH01-M3/5AT Datasheet
VS-1EMH01-M3/5AT
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VS-2EMH01-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 23285VS-2EMH01-M3/5AT Datasheet
VS-2EMH01-M3/5AT
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ES1B-HF
Comchip TechnologyIn Stock: 4176ES1B-HF Datasheet
ES1B-HF
Parametric Equivalent
US1B-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 6838US1B-E3/5AT Datasheet
US1B-E3/5AT
Parametric Equivalent
US1B-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 62485US1B-E3/61T Datasheet
US1B-E3/61T
Parametric Equivalent
US1B-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 1024US1B-M3/5AT Datasheet
US1B-M3/5AT
Parametric Equivalent
US1B-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 13902US1B-M3/61T Datasheet
US1B-M3/61T
Parametric Equivalent
US1B_R1_00001
Panjit International Inc.In Stock: 6149US1B_R1_00001 Datasheet
US1B_R1_00001
Parametric Equivalent
US1BHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 1160US1BHE3_A/H Datasheet
US1BHE3_A/H
Parametric Equivalent
US1BHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 904US1BHE3_A/I Datasheet
US1BHE3_A/I
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A
Speed Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns
Current - Reverse Leakage @ Vr 5 µA @ 100 V
Capacitance @ Vr, F 15 pF @ 4V, 1MHz
Package / Case DO-214AC, SMA
Operating Temperature - Junction -55 to 150 °C
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the US1B M2G is determined by strict equivalence across the following critical parameters:

Primary Substitution Criteria:

  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 1 A
  • Voltage - Forward (Vf) (Max) @ If: ≤ 1 V @ 1 A
  • Package / Case: DO-214AC, SMA
  • Operating Temperature - Junction: -55°C to 150°C (minimum)
  • RoHS Status: ROHS3 Compliant
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)

Parametric Equivalents share identical electrical ratings and package specifications. These parts are direct functional replacements with no derating required.

Direct Manufacturer Equivalents originate from different manufacturers but meet all electrical and mechanical specifications of the US1B M2G.

Similar Parts meet the core voltage, current, and package requirements but may exhibit variations in secondary parameters such as forward voltage, reverse recovery time, or capacitance. These parts are functionally compatible but require verification of application-specific performance requirements.

Parameter Comparison

Manufacturer Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ If [V] trr [ns] Ir @ Vr [µA] C @ Vr [pF] Package Temp Range [°C] Product Status
US1B M2G Taiwan Semiconductor Corporation 100 1 1 @ 1A 50 5 @ 100V 15 @ 4V DO-214AC (SMA) -55 to 150 Discontinued
HS1B Taiwan Semiconductor Corporation 100 1 1 @ 1A 50 5 @ 100V 20 @ 4V DO-214AC (SMA) -55 to 150 Active
HS1B R3G Taiwan Semiconductor Corporation 100 1 1 @ 1A 50 5 @ 100V 15 @ 4V DO-214AC (SMA) -55 to 150 Discontinued
US1B Taiwan Semiconductor Corporation 100 1 1 @ 1A 50 5 @ 100V 15 @ 4V DO-214AC (SMA) -55 to 150 Active
US1B R3G Taiwan Semiconductor Corporation 100 1 1 @ 1A 50 5 @ 100V 15 @ 4V DO-214AC (SMA) -55 to 150 Discontinued
US1BH Taiwan Semiconductor Corporation 100 1 1 @ 1A 50 5 @ 100V 15 @ 4V DO-214AC (SMA) -55 to 150 Active
US1B-13-F Diodes Incorporated 100 1 1 @ 1A 50 5 @ 100V 20 @ 4V DO-214AC (SMA) -65 to 150 Active
CGRA4002-G Comchip Technology 100 1 1.1 @ 1A 5 @ 100V DO-214AC (SMA) -55 to 150 Active
ES1B-13-F Diodes Incorporated 100 1 0.92 @ 1A 25 5 @ 100V 10 @ 4V DO-214AC (SMA) -55 to 150 Active
ES1B-E3/5AT Vishay General Semiconductor - Diodes Division 100 1 0.92 @ 1A 25 5 @ 100V 10 @ 4V DO-214AC (SMA) -55 to 150 Active
ES1B-LTP Micro Commercial Co 100 1 0.95 @ 1A 35 5 @ 100V 15 @ 4V DO-214AC (SMA) -65 to 175 Not For New Designs

Engineering Selection Recommendations

Recommended Primary Substitutes (Parametric Equivalents):

The US1B manufactured by Taiwan Semiconductor Corporation is the preferred direct replacement for the discontinued US1B M2G. This part maintains identical electrical specifications, package configuration, and compliance certifications. The US1B is currently in active production status with substantial inventory availability (95,300 pcs), ensuring long-term supply continuity.

The HS1B from Taiwan Semiconductor Corporation serves as an alternative parametric equivalent. It shares all critical electrical parameters with the US1B M2G with the exception of capacitance (20 pF versus 15 pF at 4V, 1MHz). This minor variation does not affect rectification performance in standard applications. The HS1B is actively produced and widely available.

Recommended Cross-Manufacturer Substitute:

The US1B-13-F manufactured by Diodes Incorporated is a direct functional equivalent meeting all electrical and mechanical specifications. This part extends the operating temperature range to -65°C to 150°C, providing enhanced low-temperature performance. The US1B-13-F is actively produced with high inventory levels (142,694 pcs), supporting reliable procurement.

Alternative Substitutes (Similar Parts):

The ES1B-13-F and ES1B-E3/5AT from Diodes Incorporated and Vishay General Semiconductor respectively are functionally compatible alternatives. These parts exhibit lower forward voltage (920 mV versus 1 V at 1 A) and faster reverse recovery time (25 ns versus 50 ns), resulting in reduced power dissipation and improved switching performance. These characteristics make them suitable for applications where thermal management or switching speed is critical. Both parts maintain the 100 V / 1 A rating and DO-214AC package specification.

The CGRA4002-G from Comchip Technology meets the core voltage, current, and package requirements. Forward voltage is specified at 1.1 V at 1 A, representing a 10% increase over the US1B M2G. This part is suitable for applications where the slightly elevated forward voltage does not compromise circuit performance.

The ES1B-LTP from Micro Commercial Co is classified as "Not For New Designs" and is not recommended for new circuit implementations. This part is retained in the comparison for reference only in legacy system maintenance scenarios.

Automotive-Grade Alternative:

The US1BH from Taiwan Semiconductor Corporation is qualified to AEC-Q101 automotive standards and carries automotive-grade designation. This part maintains identical electrical specifications to the US1B M2G and is suitable for automotive and high-reliability applications requiring automotive qualification.

Frequently Asked Questions (FAQ)

Q: Can the US1B M2G be directly replaced with the US1B?

A: Yes. The US1B is a parametric equivalent with identical voltage rating (100 V), current rating (1 A), forward voltage (1 V @ 1 A), reverse recovery time (50 ns), and package specification (DO-214AC, SMA). The US1B is actively produced and is the recommended replacement for the discontinued US1B M2G.

Q: What is the difference between the US1B and HS1B?

A: Both parts share identical electrical ratings and package specifications. The primary difference is capacitance: HS1B is specified at 20 pF versus 15 pF for the US1B at 4V, 1MHz. This variation does not affect rectification performance in standard applications. The HS1B is actively produced and available in higher inventory quantities.

Q: Can I use the ES1B-13-F as a substitute for the US1B M2G?

A: Yes, with performance enhancement. The ES1B-13-F meets all core specifications (100 V, 1 A, DO-214AC package) but offers improved performance characteristics: lower forward voltage (920 mV versus 1 V) and faster reverse recovery time (25 ns versus 50 ns). These improvements reduce power dissipation and enhance switching speed. The ES1B-13-F is suitable for applications where thermal efficiency or switching performance is important.

Q: What is the significance of the "R3G" designation in part numbers like HS1B R3G and US1B R3G?

A: The "R3G" designation indicates a specific manufacturing revision or tape reel packaging variant. These parts maintain identical electrical specifications to their base part numbers (HS1B and US1B respectively). Both HS1B R3G and US1B R3G are discontinued at DiGi Electronics; the active base part numbers (HS1B and US1B) are recommended for new procurement.

Q: Is the US1B-13-F from Diodes Incorporated compatible with the US1B M2G?

A: Yes. The US1B-13-F is a direct functional equivalent meeting all electrical specifications and package requirements. An additional benefit is the extended operating temperature range (-65°C to 150°C versus -55°C to 150°C), providing enhanced performance at lower temperatures. The US1B-13-F is actively produced with substantial inventory availability.

Q: Why is the ES1B-LTP listed as "Not For New Designs"?

A: The ES1B-LTP from Micro Commercial Co carries a "Not For New Designs" status, indicating that the manufacturer does not recommend this part for new circuit implementations. This designation typically reflects end-of-life planning or transition to newer product lines. The ES1B-LTP is retained in this reference for legacy system maintenance only. For new designs, use the ES1B-13-F or ES1B-E3/5AT instead.

Q: What is the difference between the US1BH and the standard US1B?

A: The US1BH is qualified to AEC-Q101 automotive standards and carries automotive-grade designation. Electrical specifications are identical to the US1B (100 V, 1 A, 1 V forward voltage, 50 ns reverse recovery time). The US1BH is suitable for automotive applications and high-reliability systems requiring automotive qualification. The standard US1B is appropriate for industrial and commercial applications.

Q: Can I substitute the CGRA4002-G for the US1B M2G?

A: Yes, with a minor specification variance. The CGRA4002-G meets the 100 V voltage rating, 1 A current rating, and DO-214AC package specification. The forward voltage is specified at 1.1 V at 1 A, representing a 10% increase over the US1B M2G specification of 1 V. This substitution is acceptable in applications where the slightly elevated forward voltage does not compromise circuit performance or thermal budget.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed in this reference are RoHS3 compliant and carry unlimited moisture sensitivity level (MSL 1), matching the compliance profile of the US1B M2G.

Q: What packaging options are available for substitute parts?

A: Substitute parts are available in multiple packaging formats: bulk, cut tape (CT), tape and reel (TR), and Digi-Reel®. The specific packaging format does not affect electrical performance or compatibility. Selection of packaging format is determined by procurement volume and assembly process requirements. All parts maintain the DO-214AC (SMA) component package specification.

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