Equivalent & Substitute Parts for US1BHE3_A/I

Part Overview

The US1BHE3_A/I is a general-purpose rectifier diode manufactured by Vishay General Semiconductor - Diodes Division, rated for 100 V DC reverse voltage and 1 A average rectified current in a surface mount DO-214AC (SMA) package. This diode is classified as Active product status with AEC-Q101 automotive qualification and ROHS3 compliance. Equivalent and substitute parts are identified based on matching electrical specifications, package compatibility, and operational characteristics to ensure direct functional replacement in circuit applications.

Substiute Parts

US1BHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 904US1BHE3_A/I Datasheet
US1BHE3_A/I
Current Part
US1B-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 6838US1B-E3/5AT Datasheet
US1B-E3/5AT
Parametric Equivalent
US1B-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 62485US1B-E3/61T Datasheet
US1B-E3/61T
Parametric Equivalent
GS1B-LTP
Micro Commercial CoIn Stock: 21523GS1B-LTP Datasheet
GS1B-LTP
Direct
EGF1B
Fairchild SemiconductorIn Stock: 4165EGF1B Datasheet
EGF1B
Upgrade
ES1B
YAGEOIn Stock: 65171ES1B Datasheet
ES1B
MFR Recommended
S1B
YAGEOIn Stock: 4761S1B Datasheet
S1B
MFR Recommended
ES1B-HF
Comchip TechnologyIn Stock: 4176ES1B-HF Datasheet
ES1B-HF
Parametric Equivalent
HS1B R3G
Taiwan Semiconductor CorporationIn Stock: 3555HS1B R3G Datasheet
HS1B R3G
Parametric Equivalent
US1B R3G
Taiwan Semiconductor CorporationIn Stock: 1248US1B R3G Datasheet
US1B R3G
Parametric Equivalent
US1B_R1_00001
Panjit International Inc.In Stock: 6149US1B_R1_00001 Datasheet
US1B_R1_00001
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A
Reverse Recovery Time (trr) 50 ns
Current - Reverse Leakage @ Vr 10 µA @ 100 V
Capacitance @ Vr, F 15 pF @ 4V, 1MHz
Package / Case DO-214AC, SMA
Operating Temperature - Junction -55 to 150 °C
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io)
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the US1BHE3_A/I are grouped into the following categories based on electrical parameter matching and product status:

Parametric Equivalents (Vishay General Semiconductor - Diodes Division): US1B-E3/5AT and US1B-E3/61T match all critical electrical specifications including 100 V reverse voltage, 1 A average rectified current, 50 ns reverse recovery time, 1 V forward voltage, and DO-214AC package. These parts are Active product status with identical compliance certifications.

Direct Manufacturer Equivalent (Micro Commercial Co): GS1B-LTP provides electrical equivalence with 100 V, 1 A, and DO-214AC package but operates with Standard Recovery (>500ns) rather than Fast Recovery. Product status is Not For New Designs.

Upgrade Option (Fairchild Semiconductor): EGF1B matches all electrical parameters with Fast Recovery (50 ns) and extends operating temperature range to -65°C to 175°C, providing enhanced thermal performance.

Manufacturer Recommended Alternatives (YAGEO): ES1B and S1B provide functional equivalence with minor forward voltage variations (0.95 V and 1.1 V respectively) and are Active product status.

Parametric Equivalents (Alternative Manufacturers): ES1B-HF (Comchip Technology), HS1B R3G (Taiwan Semiconductor Corporation), US1B R3G (Taiwan Semiconductor Corporation), and US1B_R1_00001 (Panjit International Inc.) all match core electrical specifications with DO-214AC packaging. Reverse leakage current and reverse recovery time vary within acceptable ranges.

Key Parameters for Substitution: Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1 A Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed Classification: Fast Recovery ≤ 500ns (preferred) or Standard Recovery Operating Temperature Range: -55°C to 150°C (minimum)

Parameter Comparison

Manufacturer Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ If [V] trr [ns] Ir @ Vr [µA] Package Temp Range [°C] Product Status
US1BHE3_A/I Vishay 100 1 1 @ 1A 50 10 @ 100V DO-214AC -55 to 150 Active
US1B-E3/5AT Vishay 100 1 1 @ 1A 50 10 @ 100V DO-214AC -55 to 150 Active
US1B-E3/61T Vishay 100 1 1 @ 1A 50 10 @ 100V DO-214AC -55 to 150 Active
GS1B-LTP Micro Commercial Co 100 1 1 @ 1A 10 @ 100V DO-214AC -55 to 150 Not For New Designs
EGF1B Fairchild Semiconductor 100 1 1 @ 1A 50 10 @ 100V DO-214AC -65 to 175 Active
ES1B YAGEO 100 1 0.95 DO-214AC Active
S1B YAGEO 100 1 1.1 DO-214AC Active
ES1B-HF Comchip Technology 100 1 1 @ 1A 35 5 @ 100V DO-214AC -55 to 150 Active
HS1B R3G Taiwan Semiconductor Corporation 100 1 1 @ 1A 50 5 @ 100V DO-214AC -55 to 150 Discontinued at DiGi Electronics
US1B R3G Taiwan Semiconductor Corporation 100 1 1 @ 1A 50 5 @ 100V DO-214AC -55 to 150 Discontinued at DiGi Electronics
US1B_R1_00001 Panjit International Inc. 100 1 1 @ 1A 50 1 @ 100V DO-214AC -55 to 150 Active

Engineering Selection Recommendations

Primary Substitutes (Recommended for New Designs): US1B-E3/5AT and US1B-E3/61T are direct parametric equivalents from Vishay with identical electrical specifications, Active product status, and full compliance certifications (ROHS3, REACH Unaffected, AEC-Q101 equivalent). These parts provide the highest level of compatibility and are suitable for direct replacement without circuit modification.

Enhanced Performance Option: EGF1B from Fairchild Semiconductor is an Active product offering identical electrical performance with an extended operating temperature range (-65°C to 175°C versus -55°C to 150°C). This part is suitable for applications requiring enhanced thermal performance or wider temperature operation.

Alternative Active Products: ES1B-HF (Comchip Technology) and US1B_R1_00001 (Panjit International Inc.) are Active products with full electrical equivalence. ES1B-HF provides improved reverse leakage characteristics (5 µA versus 10 µA) and faster reverse recovery time (35 ns versus 50 ns). US1B_R1_00001 offers superior reverse leakage performance (1 µA versus 10 µA).

Avoid for New Designs: GS1B-LTP carries Not For New Designs status and operates with Standard Recovery characteristics rather than Fast Recovery. HS1B R3G and US1B R3G are Discontinued at DiGi Electronics and should not be selected for new applications.

Compliance Considerations: All recommended substitutes maintain ROHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating, ensuring compatibility with standard manufacturing and storage processes.

Frequently Asked Questions (FAQ)

Q: Can US1B-E3/5AT and US1B-E3/61T be used interchangeably with US1BHE3_A/I? A: Yes. Both parts are parametric equivalents from Vishay with identical electrical specifications (100 V, 1 A, 50 ns reverse recovery time, 1 V forward voltage) and DO-214AC packaging. They are direct functional replacements.

Q: What is the difference between Fast Recovery and Standard Recovery classifications? A: Fast Recovery diodes have reverse recovery time ≤ 500 ns with current > 200 mA, while Standard Recovery diodes exceed 500 ns. The US1BHE3_A/I operates as Fast Recovery (50 ns). GS1B-LTP operates as Standard Recovery and may exhibit different switching characteristics in high-frequency applications.

Q: Is EGF1B a suitable replacement for automotive applications? A: EGF1B is an Active product with identical electrical specifications and extended temperature range (-65°C to 175°C). However, the original US1BHE3_A/I carries AEC-Q101 automotive qualification. EGF1B specifications do not explicitly reference AEC-Q101 qualification in the provided data.

Q: Why do some substitute parts show lower reverse leakage current? A: ES1B-HF, HS1B R3G, US1B R3G, and US1B_R1_00001 exhibit reverse leakage currents of 5 µA, 5 µA, 5 µA, and 1 µA respectively, compared to 10 µA for the main part. Lower reverse leakage represents improved performance and does not prevent substitution. These parts remain functionally compatible.

Q: What packaging formats are available for these substitutes? A: All recommended substitutes use DO-214AC (SMA) surface mount packaging. Packaging variations include Tape & Reel (TR), Cut Tape (CT), and Digi-Reel® formats, which represent different supply and handling methods rather than physical package differences.

Q: Should I select parts marked as Discontinued at DiGi Electronics? A: HS1B R3G and US1B R3G are Discontinued at DiGi Electronics. While electrically equivalent, these parts should not be selected for new designs due to limited availability and potential supply chain constraints.

Q: Are YAGEO parts ES1B and S1B suitable direct replacements? A: ES1B and S1B are Active products with 100 V, 1 A ratings and DO-214AC packaging. However, forward voltage specifications differ (0.95 V and 1.1 V respectively versus 1 V for the main part). These parts are functionally compatible but may exhibit slightly different voltage drop characteristics in circuit operation.

Q: What does MSL 1 (Unlimited) mean for moisture sensitivity? A: MSL 1 (Unlimited) indicates the component has unlimited shelf life under standard storage conditions without requiring special moisture control measures. All recommended substitutes carry this rating, ensuring compatibility with standard manufacturing processes.

Q: Can I use parts with different reverse recovery times interchangeably? A: Parts with different reverse recovery times (35 ns, 50 ns, or unspecified) remain functionally compatible for general-purpose rectification. However, in high-frequency switching applications, reverse recovery time affects switching losses and EMI characteristics. ES1B-HF with 35 ns offers improved performance in such applications.

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