US1BH Equivalent & Substitute Parts

Part Overview

The US1BH is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 100 V DC reverse voltage and 1 A average rectified current in a surface mount DO-214AC (SMA) package. This component is classified as Active product status with automotive-grade qualification (AEC-Q101) and is RoHS3 compliant. Substitute parts are necessary when the primary part number becomes unavailable from inventory or when alternative packaging formats, manufacturers, or lead times are required for production continuity.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	100	V
Current - Average Rectified (Io)	1	A
Voltage - Forward (Vf) (Max) @ If	1	V @ 1 A
Reverse Recovery Time (trr)	50	ns
Current - Reverse Leakage @ Vr	5	µA @ 100 V
Capacitance @ Vr, F	15	pF @ 4V, 1MHz
Package / Case	DO-214AC, SMA	—
Mounting Type	Surface Mount	—
Operating Temperature - Junction	-55 to 150	°C
Technology	Standard	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the US1BH is determined by electrical and mechanical parameter equivalence within the general-purpose rectifier diode category. The critical parameters that define substitutability are:

Electrical Parameters:

Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Reverse Recovery Time (trr): 50 ns
Speed classification: Fast Recovery ≤ 500 ns, > 200 mA (Io)

Mechanical Parameters:

Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature - Junction: -55°C to 150°C

Compliance Parameters:

RoHS Status: ROHS3 Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)

All substitute parts listed maintain these core electrical and mechanical specifications. Minor variations in reverse leakage current (5 µA to 10 µA) and capacitance (15 pF to 17 pF) are within acceptable tolerance ranges for general-purpose rectifier applications. Packaging format variations (Cut Tape, Tape & Reel) represent different distribution methods for the same component specification.

Parameter Comparison

Parameter	US1BH (Main)	HS1B R3G	US1B R3G	US1B-E3/5AT	US1B-E3/61T	US1B_R1_00001
Manufacturer	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	Vishay General Semiconductor	Vishay General Semiconductor	Panjit International Inc.
Voltage - DC Reverse (Vr) (Max)	100 V	100 V	100 V	100 V	100 V	100 V
Current - Average Rectified (Io)	1 A	1 A	1 A	1 A	1 A	1 A
Voltage - Forward (Vf) (Max) @ If	1 V @ 1 A	1 V @ 1 A	1 V @ 1 A	1 V @ 1 A	1 V @ 1 A	1 V @ 1 A
Reverse Recovery Time (trr)	50 ns	50 ns	50 ns	50 ns	50 ns	50 ns
Current - Reverse Leakage @ Vr	5 µA @ 100 V	5 µA @ 100 V	5 µA @ 100 V	10 µA @ 100 V	10 µA @ 100 V	1 µA @ 100 V
Capacitance @ Vr, F	15 pF @ 4V, 1MHz	15 pF @ 4V, 1MHz	15 pF @ 4V, 1MHz	15 pF @ 4V, 1MHz	15 pF @ 4V, 1MHz	17 pF @ 4V, 1MHz
Package / Case	DO-214AC, SMA	DO-214AC, SMA	DO-214AC, SMA	DO-214AC, SMA	DO-214AC, SMA	DO-214AC, SMA
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Operating Temperature - Junction	-55 to 150°C	-55 to 150°C	-55 to 150°C	-55 to 150°C	-55 to 150°C	-55 to 150°C
Product Status	Active	Discontinued at DiGi Electronics	Discontinued at DiGi Electronics	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Packaging Format	—	—	Cut Tape (CT)	Tape & Reel (TR)	Tape & Reel (TR)	Tape & Reel (TR)

Engineering Selection Recommendations

Active Product Status Substitutes: The US1B-E3/5AT, US1B-E3/61T, and US1B_R1_00001 maintain Active product status and are recommended for new designs and ongoing production. US1B-E3/61T offers the highest inventory availability (62,425 pieces) among active alternatives. Both Vishay General Semiconductor variants (US1B-E3/5AT and US1B-E3/61T) are functionally equivalent with reverse leakage current of 10 µA, which remains within acceptable operating parameters for general-purpose rectifier applications.

Discontinued Product Status Substitutes: HS1B R3G and US1B R3G are discontinued at DiGi Electronics and should not be selected for new designs. These parts are suitable only for legacy system maintenance or repair applications where existing inventory is available.

Manufacturer Alternatives: Vishay General Semiconductor (US1B-E3/5AT, US1B-E3/61T) and Panjit International Inc. (US1B_R1_00001) provide cross-manufacturer substitution options. The Panjit variant (US1B_R1_00001) exhibits superior reverse leakage performance (1 µA) compared to the main part (5 µA), with marginally higher capacitance (17 pF).

Compliance Verification: All substitute parts maintain ROHS3 compliance, MSL Level 1 (Unlimited), and REACH Unaffected status, ensuring regulatory equivalence with the US1BH.

Frequently Asked Questions (FAQ)

Q: Can US1B-E3/5AT and US1B-E3/61T be used interchangeably with US1BH?

A: Yes. Both Vishay variants are parametrically equivalent to US1BH across all critical electrical specifications (100 V reverse voltage, 1 A average rectified current, 50 ns reverse recovery time) and mechanical specifications (DO-214AC SMA package, surface mount, -55°C to 150°C operating range). The difference between these two Vishay parts is packaging format: US1B-E3/5AT is supplied in Tape & Reel with one quantity specification, while US1B-E3/61T is supplied in Tape & Reel with a different quantity specification. Both are Active products suitable for production use.

Q: What is the difference between US1B_R1_00001 (Panjit) and the Taiwan Semiconductor variants?

A: US1B_R1_00001 is manufactured by Panjit International Inc. and maintains identical electrical ratings (100 V, 1 A, 50 ns trr) and package specifications (DO-214AC SMA). The Panjit variant exhibits lower reverse leakage current (1 µA versus 5 µA for US1BH) and slightly higher capacitance (17 pF versus 15 pF). These differences are within acceptable tolerance ranges for general-purpose rectifier applications and do not affect functional compatibility.

Q: Why are HS1B R3G and US1B R3G listed as discontinued?

A: HS1B R3G and US1B R3G are marked as Discontinued at DiGi Electronics, indicating these part numbers are no longer actively distributed through primary channels. These parts should not be selected for new designs. They are listed in the substitute database only for reference in legacy system documentation or repair scenarios where existing inventory may be available.

Q: Does packaging format (Cut Tape versus Tape & Reel) affect electrical performance?

A: No. Packaging format (Cut Tape, Tape & Reel, or bulk) is a distribution and handling specification only. It does not affect the electrical or mechanical performance of the diode. US1B R3G (Cut Tape) and US1B-E3/5AT (Tape & Reel) are electrically identical; the packaging format selection is determined by assembly line requirements and order quantity.

Q: Are all substitute parts qualified to AEC-Q101 automotive standards?

A: The main part US1BH carries AEC-Q101 automotive qualification. The substitute parts provided (HS1B R3G, US1B R3G, US1B-E3/5AT, US1B-E3/61T, US1B_R1_00001) are listed based on parametric equivalence. Automotive qualification status for substitute parts should be verified against specific application requirements and supplier documentation.

Q: What is the significance of reverse leakage current variation (1 µA to 10 µA) among substitutes?

A: Reverse leakage current is the small current that flows through the diode in the reverse-biased state. The US1BH specifies 5 µA at 100 V, while substitutes range from 1 µA (US1B_R1_00001) to 10 µA (Vishay variants). These variations are within normal manufacturing tolerances for general-purpose rectifier diodes and do not affect circuit functionality in standard applications. Lower leakage (1 µA) provides marginal improvement in standby power consumption; higher leakage (10 µA) remains acceptable for most rectification circuits.

Q: Can US1BH be substituted in circuits requiring fast recovery characteristics?

A: Yes. US1BH and all listed substitutes are classified as Fast Recovery diodes with reverse recovery time (trr) of 50 ns and speed specification of ≤ 500 ns for currents > 200 mA. This classification is maintained across all substitute parts, ensuring compatibility in applications requiring fast switching performance.

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