Equivalent & Substitute Parts for US1B-13

Part Overview

The US1B-13 is a general-purpose rectifier diode rated for 100 V DC reverse voltage and 1 A average rectified current in a surface mount SMA package (DO-214AC). This part is manufactured by Diodes Incorporated and is classified as a fast recovery diode with a reverse recovery time of 50 ns.

The US1B-13 is currently discontinued at DiGi Electronics. Equivalent and substitute parts are available from multiple manufacturers with identical or superior electrical characteristics and active product status, making substitution necessary for new designs and ongoing production requirements.

Substiute Parts

US1B-13
Diodes IncorporatedIn Stock: 811US1B-13 Datasheet
US1B-13
Current Part
US1B-13-F
Diodes IncorporatedIn Stock: 142770US1B-13-F Datasheet
US1B-13-F
Direct
EGF1B-E3/67A
Vishay General Semiconductor - Diodes DivisionIn Stock: 30297EGF1B-E3/67A Datasheet
EGF1B-E3/67A
Direct
EGF1B
Fairchild SemiconductorIn Stock: 4165EGF1B Datasheet
EGF1B
MFR Recommended
ES1B
YAGEOIn Stock: 65171ES1B Datasheet
ES1B
MFR Recommended
ES1B-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 27131ES1B-E3/5AT Datasheet
ES1B-E3/5AT
MFR Recommended
ES1B-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 70592ES1B-E3/61T Datasheet
ES1B-E3/61T
MFR Recommended
ES1B-LTP
Micro Commercial CoIn Stock: 17292ES1B-LTP Datasheet
ES1B-LTP
MFR Recommended
ESH1B-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 10156ESH1B-E3/61T Datasheet
ESH1B-E3/61T
MFR Recommended
GS1B-LTP
Micro Commercial CoIn Stock: 21523GS1B-LTP Datasheet
GS1B-LTP
MFR Recommended
RGF1B
Fairchild SemiconductorIn Stock: 39877RGF1B Datasheet
RGF1B
MFR Recommended
RS1B-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 15322RS1B-E3/5AT Datasheet
RS1B-E3/5AT
MFR Recommended
RS1B-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 7879RS1B-E3/61T Datasheet
RS1B-E3/61T
MFR Recommended
S1B-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 56951S1B-E3/5AT Datasheet
S1B-E3/5AT
MFR Recommended
US1A-TP
Micro Commercial CoIn Stock: 4028US1A-TP Datasheet
US1A-TP
MFR Recommended
US1B-TP
Micro Commercial CoIn Stock: 56481US1B-TP Datasheet
US1B-TP
MFR Recommended

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns
Current - Reverse Leakage @ Vr 5 µA @ 100 V
Mounting Type Surface Mount
Package / Case DO-214AC, SMA
Operating Temperature - Junction -65 to 150 °C

Substitute Part Grouping Explanation

Substitution of the US1B-13 is determined by the following critical parameters:

Electrical Compatibility Requirements:

  • Voltage - DC Reverse (Vr) (Max): Must equal or exceed 100 V
  • Current - Average Rectified (Io): Must equal or exceed 1 A
  • Voltage - Forward (Vf) (Max) @ If: Must not exceed 1 V @ 1 A
  • Speed Classification: Must be Fast Recovery (≤ 500ns, > 200mA)
  • Reverse Recovery Time (trr): Must not exceed 50 ns

Mechanical Compatibility Requirements:

  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC (SMA) or equivalent footprint

Environmental Compatibility Requirements:

  • Operating Temperature - Junction: Must support -65°C to 150°C minimum range

Substitute parts are grouped into two categories:

Category 1: Direct Equivalents (Identical Electrical and Mechanical Specifications) Parts meeting all electrical parameters within the specified limits and using the same DO-214AC (SMA) package.

Category 2: Functional Equivalents (Superior or Equal Electrical Performance) Parts with equal or superior electrical characteristics, same package, but potentially different manufacturers or product status classifications.

Parameter Comparison

Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ 1A [V] trr [ns] Ir @ 100V [µA] Package Status RoHS
US1B-13 Diodes Incorporated 100 1 1.0 50 5 DO-214AC (SMA) Discontinued Non-compliant
US1B-13-F Diodes Incorporated 100 1 1.0 50 5 DO-214AC (SMA) Active ROHS3 Compliant
EGF1B-E3/67A Vishay General Semiconductor 100 1 1.0 50 5 DO-214BA (GF1) Not For New Designs ROHS3 Compliant
EGF1B Fairchild Semiconductor 100 1 1.0 50 10 DO-214AC (SMA) Active
ES1B-E3/5AT Vishay General Semiconductor 100 1 0.92 25 5 DO-214AC (SMA) Active ROHS3 Compliant
ES1B-E3/61T Vishay General Semiconductor 100 1 0.92 25 5 DO-214AC (SMA) Active ROHS3 Compliant
ES1B-LTP Micro Commercial Co 100 1 0.95 35 5 DO-214AC (SMA) Not For New Designs ROHS3 Compliant
ESH1B-E3/61T Vishay General Semiconductor 100 1 0.90 25 1 DO-214AC (SMA) Active ROHS3 Compliant
GS1B-LTP Micro Commercial Co 100 1 1.0 Standard Recovery 10 DO-214AC (SMA) Not For New Designs ROHS3 Compliant
RGF1B Fairchild Semiconductor 100 1 1.3 150 5 DO-214AC (SMA) Active

Engineering Selection Recommendations

Primary Recommendation: US1B-13-F

The US1B-13-F is the direct equivalent of the discontinued US1B-13, manufactured by Diodes Incorporated. It provides identical electrical specifications (100 V, 1 A, 1.0 V forward voltage, 50 ns reverse recovery time) in the same DO-214AC (SMA) package. The US1B-13-F is currently active and ROHS3 compliant, with 142,694 units in stock. This part requires no circuit redesign and provides the highest compatibility for direct replacement.

Secondary Recommendations for Active Products:

ES1B-E3/5AT and ES1B-E3/61T (Vishay General Semiconductor) are active products with superior electrical performance. Both offer lower forward voltage (0.92 V vs. 1.0 V) and faster reverse recovery time (25 ns vs. 50 ns), resulting in reduced power dissipation and improved switching characteristics. Both are ROHS3 compliant and available in DO-214AC (SMA) packages. These parts are suitable for new designs where improved efficiency is beneficial.

ESH1B-E3/61T (Vishay General Semiconductor) provides the lowest reverse leakage current (1 µA vs. 5 µA) and lowest forward voltage (0.90 V), making it optimal for applications requiring minimal leakage or low-power operation. This part is active and ROHS3 compliant.

EGF1B (Fairchild Semiconductor) is an active product with identical voltage and current ratings. However, it exhibits higher forward voltage (1.0 V) and significantly longer reverse recovery time (150 ns), making it less suitable for high-frequency switching applications.

Parts Not Recommended for New Designs:

EGF1B-E3/67A, ES1B-LTP, and GS1B-LTP are marked as "Not For New Designs" and should be avoided in new circuit development. GS1B-LTP additionally uses standard recovery speed classification rather than fast recovery, making it unsuitable for applications requiring the fast recovery characteristics of the original US1B-13.

RGF1B exhibits significantly higher forward voltage (1.3 V) and reverse recovery time (150 ns), resulting in higher power dissipation and slower switching performance. This part is not recommended as a substitute.

Frequently Asked Questions (FAQ)

Q: Can I use US1B-13-F as a direct replacement for US1B-13?

A: Yes. The US1B-13-F is manufactured by Diodes Incorporated and provides identical electrical specifications and package configuration. It is the recommended direct replacement for the discontinued US1B-13.

Q: What is the difference between fast recovery and standard recovery diodes?

A: Fast recovery diodes have reverse recovery times ≤ 500 ns and are designed for high-frequency switching applications. Standard recovery diodes have longer reverse recovery times (> 500 ns) and are suitable for lower-frequency applications. The US1B-13 is a fast recovery diode. GS1B-LTP uses standard recovery classification and is not suitable for applications requiring fast recovery performance.

Q: Are there performance advantages to using ES1B-E3/5AT or ES1B-E3/61T instead of US1B-13-F?

A: Yes. Both ES1B variants offer lower forward voltage (0.92 V vs. 1.0 V) and faster reverse recovery time (25 ns vs. 50 ns). These improvements reduce power dissipation and enable faster switching, making them beneficial for efficiency-critical or high-frequency applications. Both are ROHS3 compliant and active products.

Q: What does "Not For New Designs" mean?

A: Parts marked "Not For New Designs" are in mature or declining production phases. While they may still be available, manufacturers do not recommend their use in new circuit development. For new designs, select parts with "Active" status.

Q: Can I use EGF1B-E3/67A as a substitute?

A: EGF1B-E3/67A meets the electrical requirements but uses a DO-214BA (GF1) package instead of DO-214AC (SMA). While the electrical specifications are equivalent, the different package may require PCB layout modifications. Additionally, this part is marked "Not For New Designs." Use US1B-13-F or active alternatives instead.

Q: Why does ESH1B-E3/61T have lower reverse leakage current than other options?

A: ESH1B-E3/61T is designed with enhanced leakage characteristics, providing only 1 µA reverse leakage at 100 V compared to 5-10 µA in other options. This makes it suitable for applications where minimal leakage current is critical, such as precision analog circuits or low-power standby applications.

Q: Are all substitute parts RoHS compliant?

A: Most active substitute parts (US1B-13-F, ES1B-E3/5AT, ES1B-E3/61T, ESH1B-E3/61T) are ROHS3 compliant. The original US1B-13 is RoHS non-compliant. EGF1B and RGF1B do not have RoHS status specified in the provided data. Verify RoHS compliance requirements for your application before final selection.

Q: What is the difference between ES1B-E3/5AT and ES1B-E3/61T?

A: Both parts are electrically identical with the same voltage, current, forward voltage, and reverse recovery time specifications. The difference lies in packaging: ES1B-E3/5AT is supplied in Cut Tape (CT) & Digi-Reel format, while ES1B-E3/61T is also supplied in Cut Tape (CT) & Digi-Reel format. Both are active products with identical performance characteristics.

Q: Can I use RGF1B as a substitute?

A: RGF1B meets the voltage and current requirements but exhibits significantly higher forward voltage (1.3 V vs. 1.0 V) and much longer reverse recovery time (150 ns vs. 50 ns). This results in higher power dissipation and slower switching performance. It is not recommended as a substitute for the US1B-13 in applications requiring fast recovery characteristics.

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