US1A R3G Equivalent & Substitute Parts

Part Overview

The US1A R3G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 50 V DC reverse voltage and 1 A average rectified current in a surface mount DO-214AC (SMA) package. This part is discontinued at DiGi Electronics, necessitating identification of equivalent and substitute components for ongoing design support and procurement.

Equivalent parts maintain identical electrical specifications and mechanical compatibility, while substitute parts offer similar functional performance with minor parameter variations that remain within acceptable operating ranges for general-purpose rectification applications.

Substiute Parts

US1A R3G
Taiwan Semiconductor CorporationIn Stock: 1205US1A R3G Datasheet
US1A R3G
Current Part
HS1A
Taiwan Semiconductor CorporationIn Stock: 687HS1A Datasheet
HS1A
Parametric Equivalent
US1A
Taiwan Semiconductor CorporationIn Stock: 17217US1A Datasheet
US1A
Parametric Equivalent
US1AH
Taiwan Semiconductor CorporationIn Stock: 848US1AH Datasheet
US1AH
Parametric Equivalent
US1A-13-F
Diodes IncorporatedIn Stock: 25367US1A-13-F Datasheet
US1A-13-F
Direct
CGRA4001-G
Comchip TechnologyIn Stock: 10292CGRA4001-G Datasheet
CGRA4001-G
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ES1A-13-F
Diodes IncorporatedIn Stock: 70327ES1A-13-F Datasheet
ES1A-13-F
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ES1A-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 20190ES1A-E3/5AT Datasheet
ES1A-E3/5AT
Similar
ES1A-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 1061ES1A-M3/5AT Datasheet
ES1A-M3/5AT
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ES1A-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 12684ES1A-M3/61T Datasheet
ES1A-M3/61T
Similar
ES1AHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 4243ES1AHE3_A/H Datasheet
ES1AHE3_A/H
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ES1AHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 996ES1AHE3_A/I Datasheet
ES1AHE3_A/I
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GS2A-LTP
Micro Commercial CoIn Stock: 1213GS2A-LTP Datasheet
GS2A-LTP
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RS1A-13-F
Diodes IncorporatedIn Stock: 10435RS1A-13-F Datasheet
RS1A-13-F
Similar
RS1AB-13-F
Diodes IncorporatedIn Stock: 15312RS1AB-13-F Datasheet
RS1AB-13-F
Similar
S1A-13-F
Diodes IncorporatedIn Stock: 100403S1A-13-F Datasheet
S1A-13-F
Similar
S1AB-13-F
Diodes IncorporatedIn Stock: 39805S1AB-13-F Datasheet
S1AB-13-F
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S1AHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 70236S1AHE3_A/H Datasheet
S1AHE3_A/H
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S1AHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 921S1AHE3_A/I Datasheet
S1AHE3_A/I
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US1A-TP
Micro Commercial CoIn Stock: 4028US1A-TP Datasheet
US1A-TP
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ES1A-HF
Comchip TechnologyIn Stock: 783ES1A-HF Datasheet
ES1A-HF
Parametric Equivalent
US1A-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 5736US1A-E3/5AT Datasheet
US1A-E3/5AT
Parametric Equivalent
US1A-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 4006US1A-E3/61T Datasheet
US1A-E3/61T
Parametric Equivalent
US1A-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 1178US1A-M3/5AT Datasheet
US1A-M3/5AT
Parametric Equivalent
US1A-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 13748US1A-M3/61T Datasheet
US1A-M3/61T
Parametric Equivalent
US1A_R1_00001
Panjit International Inc.In Stock: 2863US1A_R1_00001 Datasheet
US1A_R1_00001
Parametric Equivalent
US1AHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 1188US1AHE3_A/H Datasheet
US1AHE3_A/H
Parametric Equivalent
US1AHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 1141US1AHE3_A/I Datasheet
US1AHE3_A/I
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 50 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A V @ A
Speed Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns
Current - Reverse Leakage @ Vr 5 µA @ 50 V µA @ V
Package / Case DO-214AC, SMA
Mounting Type Surface Mount
Operating Temperature - Junction -55°C ~ 150°C °C
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution eligibility for the US1A R3G is determined by the following critical parameters:

Mandatory Matching Parameters:

  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 1 A
  • Package / Case: DO-214AC, SMA
  • Mounting Type: Surface Mount
  • RoHS Status: ROHS3 Compliant

Allowable Variation Parameters:

  • Voltage - Forward (Vf) (Max) @ If: Up to 1.1 V @ 1 A
  • Reverse Recovery Time (trr): 25 ns to 50 ns
  • Capacitance @ Vr, F: 10 pF to 20 pF @ 4V, 1MHz
  • Operating Temperature - Junction: -55°C minimum to 150°C minimum
  • Speed Classification: Fast Recovery or Standard Recovery

Parts are grouped into three categories: parametric equivalents (identical specifications), direct manufacturer alternatives (same base part number from different manufacturers), and similar parts (minor parameter deviations within acceptable ranges).

Parameter Comparison

Manufacturer Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ If [V @ A] trr [ns] Capacitance @ Vr [pF @ V, MHz] Tj (Min-Max) [°C] Product Status
US1A R3G Taiwan Semiconductor Corporation 50 1 1 @ 1 50 15 @ 4, 1 -55 ~ 150 Discontinued
HS1A Taiwan Semiconductor Corporation 50 1 1 @ 1 50 20 @ 4, 1 -55 ~ 150 Active
US1A Taiwan Semiconductor Corporation 50 1 1 @ 1 50 15 @ 4, 1 -55 ~ 150 Active
US1AH Taiwan Semiconductor Corporation 50 1 1 @ 1 50 15 @ 4, 1 -55 ~ 150 Active
US1A-13-F Diodes Incorporated 50 1 1 @ 1 50 20 @ 4, 1 -65 ~ 150 Active
CGRA4001-G Comchip Technology 50 1 1.1 @ 1 -55 ~ 150 Active
ES1A-13-F Diodes Incorporated 50 1 0.92 @ 1 25 10 @ 4, 1 -55 ~ 150 Active
ES1A-E3/5AT Vishay General Semiconductor - Diodes Division 50 1 0.92 @ 1 25 10 @ 4, 1 -55 ~ 155 Active
ES1A-M3/5AT Vishay General Semiconductor - Diodes Division 50 1 0.92 @ 1 25 10 @ 4, 1 -55 ~ 150 Active
ES1A-M3/61T Vishay General Semiconductor - Diodes Division 50 1 0.92 @ 1 25 10 @ 4, 1 -55 ~ 150 Active
ES1AHE3_A/H Vishay General Semiconductor - Diodes Division 50 1 0.92 @ 1 25 10 @ 4, 1 -55 ~ 150 Active

Engineering Selection Recommendations

Parametric Equivalents (Preferred for Direct Replacement):

The US1A (base part number from Taiwan Semiconductor Corporation) is the primary parametric equivalent, offering identical electrical specifications and active product status. This part maintains 15 pF capacitance and 50 ns reverse recovery time matching the original US1A R3G specification. The US1AH variant provides the same electrical performance with AEC-Q101 automotive qualification, suitable for applications requiring automotive-grade components.

The HS1A from Taiwan Semiconductor Corporation is also a parametric equivalent with marginally higher capacitance (20 pF versus 15 pF), which remains within acceptable operating ranges for general-purpose rectification.

Direct Manufacturer Alternatives:

The US1A-13-F from Diodes Incorporated maintains identical voltage, current, and recovery time specifications with extended operating temperature range (-65°C to 150°C). This part is available in high volume and offers compatibility with the original package specification.

Similar Parts with Minor Parameter Variations:

The ES1A series from Diodes Incorporated and Vishay General Semiconductor - Diodes Division offers improved performance characteristics with lower forward voltage (0.92 V versus 1 V) and faster reverse recovery time (25 ns versus 50 ns). These parts are suitable for applications where reduced power dissipation and faster switching are beneficial. The ES1AHE3_A/H variant includes AEC-Q101 automotive qualification.

The CGRA4001-G from Comchip Technology is a similar part with marginally higher forward voltage (1.1 V) and standard recovery speed classification. This part is suitable for general-purpose applications where the slightly higher forward voltage is acceptable.

All recommended substitutes maintain ROHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating, ensuring compatibility with standard manufacturing and storage practices.

Frequently Asked Questions (FAQ)

Q: Can the US1A R3G be directly replaced with the US1A?

A: Yes. The US1A from Taiwan Semiconductor Corporation is a parametric equivalent with identical electrical specifications (50 V, 1 A, 1 V forward voltage, 50 ns recovery time) and the same DO-214AC surface mount package. The primary difference is product status: US1A is active while US1A R3G is discontinued.

Q: What is the difference between the US1A and HS1A?

A: Both parts are parametric equivalents from Taiwan Semiconductor Corporation with identical voltage, current, and recovery time ratings. The HS1A has slightly higher capacitance (20 pF versus 15 pF at 4V, 1MHz), which does not affect functionality in general-purpose rectification applications.

Q: Are the ES1A series parts direct replacements?

A: The ES1A series parts are similar substitutes, not direct equivalents. They offer improved performance with lower forward voltage (0.92 V versus 1 V) and faster reverse recovery time (25 ns versus 50 ns). These characteristics reduce power dissipation and enable faster switching. They are electrically compatible and use the same DO-214AC package, making them suitable for direct substitution in most applications.

Q: What is the significance of the US1AH variant?

A: The US1AH is a parametric equivalent to the US1A R3G with AEC-Q101 automotive qualification. It maintains identical electrical specifications and is suitable for applications requiring automotive-grade components or compliance with automotive qualification standards.

Q: Can I use the CGRA4001-G as a substitute?

A: The CGRA4001-G is a similar part with identical voltage and current ratings but has marginally higher forward voltage (1.1 V versus 1 V) and standard recovery speed classification. It is suitable for general-purpose rectification applications where the slightly higher forward voltage and slower recovery time are acceptable.

Q: What packaging options are available for these substitutes?

A: All recommended substitutes use the DO-214AC (SMA) surface mount package, maintaining mechanical compatibility with the original US1A R3G. Packaging formats vary by manufacturer and supplier, including Cut Tape (CT), Digi-Reel, and Tape & Reel (TR) options.

Q: Are all substitutes RoHS3 compliant?

A: Yes. All recommended substitutes maintain ROHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating, ensuring compatibility with standard manufacturing processes and environmental regulations.

Q: What is the operating temperature range for these parts?

A: The US1A R3G and most substitutes operate from -55°C to 150°C junction temperature. The US1A-13-F from Diodes Incorporated extends the minimum operating temperature to -65°C. The ES1A-E3/5AT from Vishay extends the maximum operating temperature to 155°C.

Q: How do I select between multiple substitute options?

A: Selection depends on application requirements. For direct replacement with identical specifications, use the US1A or HS1A. For improved performance with lower power dissipation, use the ES1A series. For automotive applications, use the US1AH or ES1AHE3_A/H. For extended low-temperature operation, use the US1A-13-F.

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