US1A M2G Equivalent & Substitute Parts

Part Overview

The US1A M2G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 50 V DC reverse voltage and 1 A average rectified current in a surface mount DO-214AC (SMA) package. This part is discontinued at DiGi Electronics, necessitating identification of equivalent and substitute components for ongoing design support and procurement.

The US1A M2G operates across a junction temperature range of -55°C to 150°C and meets ROHS3 compliance requirements. Fast recovery characteristics with a reverse recovery time of 50 ns and forward voltage of 1 V at 1 A define its electrical performance envelope.

Substiute Parts

US1A M2G
Taiwan Semiconductor CorporationIn Stock: 1094US1A M2G Datasheet
US1A M2G
Current Part
HS1A
Taiwan Semiconductor CorporationIn Stock: 687HS1A Datasheet
HS1A
Parametric Equivalent
US1A
Taiwan Semiconductor CorporationIn Stock: 17217US1A Datasheet
US1A
Parametric Equivalent
US1AH
Taiwan Semiconductor CorporationIn Stock: 848US1AH Datasheet
US1AH
Parametric Equivalent
US1A-13-F
Diodes IncorporatedIn Stock: 25367US1A-13-F Datasheet
US1A-13-F
Direct
CGRA4001-G
Comchip TechnologyIn Stock: 10292CGRA4001-G Datasheet
CGRA4001-G
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ES1A
YAGEOIn Stock: 80303ES1A Datasheet
ES1A
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ES1A-13-F
Diodes IncorporatedIn Stock: 70327ES1A-13-F Datasheet
ES1A-13-F
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ES1A-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 20190ES1A-E3/5AT Datasheet
ES1A-E3/5AT
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ES1A-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 1061ES1A-M3/5AT Datasheet
ES1A-M3/5AT
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ES1A-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 12684ES1A-M3/61T Datasheet
ES1A-M3/61T
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ES1AHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 4243ES1AHE3_A/H Datasheet
ES1AHE3_A/H
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ES1AHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 996ES1AHE3_A/I Datasheet
ES1AHE3_A/I
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GS2A-LTP
Micro Commercial CoIn Stock: 1213GS2A-LTP Datasheet
GS2A-LTP
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RS1A-13-F
Diodes IncorporatedIn Stock: 10435RS1A-13-F Datasheet
RS1A-13-F
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RS1AB-13-F
Diodes IncorporatedIn Stock: 15312RS1AB-13-F Datasheet
RS1AB-13-F
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S1A-13-F
Diodes IncorporatedIn Stock: 100403S1A-13-F Datasheet
S1A-13-F
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S1AB-13-F
Diodes IncorporatedIn Stock: 39805S1AB-13-F Datasheet
S1AB-13-F
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S1AHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 70236S1AHE3_A/H Datasheet
S1AHE3_A/H
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S1AHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 921S1AHE3_A/I Datasheet
S1AHE3_A/I
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US1A-TP
Micro Commercial CoIn Stock: 4028US1A-TP Datasheet
US1A-TP
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ES1A-HF
Comchip TechnologyIn Stock: 783ES1A-HF Datasheet
ES1A-HF
Parametric Equivalent
US1A-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 5736US1A-E3/5AT Datasheet
US1A-E3/5AT
Parametric Equivalent
US1A-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 4006US1A-E3/61T Datasheet
US1A-E3/61T
Parametric Equivalent
US1A-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 1178US1A-M3/5AT Datasheet
US1A-M3/5AT
Parametric Equivalent
US1A-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 13748US1A-M3/61T Datasheet
US1A-M3/61T
Parametric Equivalent
US1A_R1_00001
Panjit International Inc.In Stock: 2863US1A_R1_00001 Datasheet
US1A_R1_00001
Parametric Equivalent
US1AHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 1188US1AHE3_A/H Datasheet
US1AHE3_A/H
Parametric Equivalent
US1AHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 1141US1AHE3_A/I Datasheet
US1AHE3_A/I
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 50 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A
Speed Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns
Current - Reverse Leakage @ Vr 5 µA @ 50 V
Capacitance @ Vr, F 15 pF @ 4V, 1MHz
Package / Case DO-214AC, SMA
Operating Temperature - Junction -55 to 150 °C
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the US1A M2G is determined by strict equivalence across the following critical parameters:

Primary Equivalence Criteria:

  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 1 A
  • Package / Case: DO-214AC, SMA
  • Mounting Type: Surface Mount
  • Technology: Standard
  • RoHS Status: ROHS3 Compliant

Secondary Compatibility Parameters:

  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A (or lower)
  • Speed: Fast Recovery ≤ 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns (or lower)
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V (or lower)
  • Operating Temperature - Junction: -55°C to 150°C (or wider range)

Parts are grouped into three categories:

Parametric Equivalents: Identical electrical specifications and package, manufactured by Taiwan Semiconductor Corporation. These parts share the same base electrical performance and are direct functional replacements.

Direct Manufacturer Equivalents: Parts from alternative manufacturers (Diodes Incorporated, Vishay, Comchip Technology, YAGEO) that meet or exceed the primary equivalence criteria. These parts maintain the same voltage, current, and package specifications with variations in secondary parameters such as forward voltage or reverse recovery time.

Similar Parts: Components that meet the primary voltage, current, and package requirements but exhibit variations in recovery speed or forward voltage characteristics. These parts are suitable for applications where the secondary parameter variations do not impact circuit performance.

Parameter Comparison

Manufacturer Part Number Manufacturer Vr (Max) Io Vf (Max) @ If Speed trr Ir @ Vr Package Temp Range Product Status
US1A M2G Taiwan Semiconductor Corporation 50 V 1 A 1 V @ 1 A Fast Recovery ≤ 500ns 50 ns 5 µA @ 50 V DO-214AC (SMA) -55 to 150°C Discontinued
HS1A Taiwan Semiconductor Corporation 50 V 1 A 1 V @ 1 A Fast Recovery ≤ 500ns 50 ns 5 µA @ 50 V DO-214AC (SMA) -55 to 150°C Active
US1A Taiwan Semiconductor Corporation 50 V 1 A 1 V @ 1 A Fast Recovery ≤ 500ns 50 ns 5 µA @ 50 V DO-214AC (SMA) -55 to 150°C Active
US1AH Taiwan Semiconductor Corporation 50 V 1 A 1 V @ 1 A Fast Recovery ≤ 500ns 50 ns 5 µA @ 50 V DO-214AC (SMA) -55 to 150°C Active
US1A-13-F Diodes Incorporated 50 V 1 A 1 V @ 1 A Fast Recovery ≤ 500ns 50 ns 5 µA @ 50 V DO-214AC (SMA) -65 to 150°C Active
CGRA4001-G Comchip Technology 50 V 1 A 1.1 V @ 1 A Standard Recovery >500ns 5 µA @ 50 V DO-214AC (SMA) -55 to 150°C Active
ES1A YAGEO 50 V 1 A 0.95 V @ 1 A 5 µA @ 50 V DO-214AC (SMA) Active
ES1A-13-F Diodes Incorporated 50 V 1 A 920 mV @ 1 A Fast Recovery ≤ 500ns 25 ns 5 µA @ 50 V DO-214AC (SMA) -55 to 150°C Active
ES1A-E3/5AT Vishay General Semiconductor - Diodes Division 50 V 1 A 920 mV @ 1 A Fast Recovery ≤ 500ns 25 ns 5 µA @ 50 V DO-214AC (SMA) -55 to 155°C Active
ES1A-M3/5AT Vishay General Semiconductor - Diodes Division 50 V 1 A 920 mV @ 1 A Fast Recovery ≤ 500ns 25 ns 5 µA @ 50 V DO-214AC (SMA) -55 to 150°C Active
ES1A-M3/61T Vishay General Semiconductor - Diodes Division 50 V 1 A 920 mV @ 1 A Fast Recovery ≤ 500ns 25 ns 5 µA @ 50 V DO-214AC (SMA) -55 to 150°C Active

Engineering Selection Recommendations

Parametric Equivalents (Highest Priority):

The HS1A, US1A, and US1AH from Taiwan Semiconductor Corporation are parametric equivalents to the US1A M2G. These parts maintain identical electrical specifications and package configuration. The US1A and HS1A are currently in active production status with substantial inventory availability (17,187 and 670 units respectively). The US1AH variant includes AEC-Q101 automotive qualification, suitable for applications requiring automotive-grade components.

Direct Manufacturer Equivalents (High Priority):

The US1A-13-F from Diodes Incorporated is a direct equivalent manufactured by an alternative supplier. This part meets all primary equivalence criteria with an extended operating temperature range of -65°C to 150°C. Inventory availability is substantial at 25,300 units.

The ES1A-13-F, ES1A-E3/5AT, ES1A-M3/5AT, and ES1A-M3/61T from Vishay General Semiconductor and Diodes Incorporated provide improved electrical performance with lower forward voltage (920 mV versus 1 V) and faster reverse recovery time (25 ns versus 50 ns). These characteristics result in reduced power dissipation and improved switching performance. All variants maintain the 50 V / 1 A rating and DO-214AC package specification.

Similar Parts (Conditional Use):

The CGRA4001-G from Comchip Technology meets the primary voltage, current, and package requirements but exhibits standard recovery speed (>500 ns) rather than fast recovery. This part is suitable for applications where switching speed is not a critical performance factor. Forward voltage is specified at 1.1 V, representing a 10% increase over the US1A M2G.

The ES1A from YAGEO meets the primary voltage and current specifications with reduced forward voltage (0.95 V). Detailed electrical specifications for recovery time and operating temperature range are not provided in the available data.

Compliance and Certification:

All substitute parts listed maintain ROHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating, consistent with the US1A M2G. All parts are classified under ECCN EAR99 and HTSUS 8541.10.0080.

Frequently Asked Questions (FAQ)

Q: Can the HS1A directly replace the US1A M2G in existing designs?

A: Yes. The HS1A is a parametric equivalent with identical voltage (50 V), current (1 A), forward voltage (1 V @ 1 A), recovery time (50 ns), and package (DO-214AC SMA) specifications. The HS1A is in active production status, addressing the discontinuation of the US1A M2G.

Q: What is the difference between the US1A and US1AH variants?

A: The US1AH includes AEC-Q101 automotive qualification, making it suitable for automotive applications requiring automotive-grade component certification. Electrical specifications are identical to the standard US1A. Both are in active production.

Q: Can ES1A series parts replace the US1A M2G?

A: ES1A series parts (ES1A-13-F, ES1A-E3/5AT, ES1A-M3/5AT, ES1A-M3/61T) meet the primary voltage, current, and package requirements. These parts offer improved performance with lower forward voltage (920 mV versus 1 V) and faster reverse recovery time (25 ns versus 50 ns). They are suitable replacements in applications where improved switching performance is beneficial or neutral.

Q: What is the significance of the forward voltage difference between US1A M2G (1 V) and ES1A variants (920 mV)?

A: The 80 mV reduction in forward voltage results in lower power dissipation during conduction. In high-current or high-frequency applications, this difference may provide thermal benefits. In low-power applications, the difference is negligible.

Q: Is the CGRA4001-G from Comchip Technology a suitable replacement?

A: The CGRA4001-G meets the primary voltage (50 V), current (1 A), and package (DO-214AC SMA) specifications. However, it operates with standard recovery speed (>500 ns) rather than fast recovery (≤500 ns). This part is suitable for applications where switching speed is not performance-critical. Forward voltage is specified at 1.1 V, representing a 10% increase over the US1A M2G.

Q: What packaging options are available for substitute parts?

A: All substitute parts are supplied in DO-214AC (SMA) surface mount package, consistent with the US1A M2G. Packaging variants include Cut Tape (CT) & Digi-Reel®, Tape & Reel (TR), and standard reels. Specific packaging availability varies by manufacturer and distributor.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed in this reference maintain ROHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating, consistent with the US1A M2G.

Q: What is the operating temperature range for substitute parts?

A: The US1A M2G operates from -55°C to 150°C. Substitute parts maintain this range or provide extended ranges: US1A-13-F extends to -65°C; ES1A-E3/5AT extends to 155°C. All other variants maintain the -55°C to 150°C specification.

Q: Which substitute part offers the best inventory availability?

A: The US1A from Taiwan Semiconductor Corporation offers the highest inventory availability at 17,187 units. The ES1A-13-F from Diodes Incorporated provides 70,300 units. Both parts are in active production status.

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